Ezra Bussmann

762 total citations
48 papers, 561 citations indexed

About

Ezra Bussmann is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, Ezra Bussmann has authored 48 papers receiving a total of 561 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Atomic and Molecular Physics, and Optics, 31 papers in Electrical and Electronic Engineering and 15 papers in Materials Chemistry. Recurrent topics in Ezra Bussmann's work include Semiconductor materials and devices (20 papers), Surface and Thin Film Phenomena (16 papers) and Force Microscopy Techniques and Applications (13 papers). Ezra Bussmann is often cited by papers focused on Semiconductor materials and devices (20 papers), Surface and Thin Film Phenomena (16 papers) and Force Microscopy Techniques and Applications (13 papers). Ezra Bussmann collaborates with scholars based in United States, France and Australia. Ezra Bussmann's co-authors include C. C. Williams, Frédéric Leroy, Fabien Cheynis, Pierre Müller, Shashank Misra, Olivier Pierre-Louis, Ning Zheng, Andrew Baczewski, B. S. Swartzentruber and Dong Jun Kim and has published in prestigious journals such as Physical Review Letters, Nano Letters and ACS Nano.

In The Last Decade

Ezra Bussmann

45 papers receiving 550 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ezra Bussmann United States 16 345 296 194 128 116 48 561
Л. И. Федина Russia 11 299 0.9× 216 0.7× 214 1.1× 72 0.6× 76 0.7× 61 436
Brian Borovsky United States 14 245 0.7× 495 1.7× 126 0.6× 26 0.2× 158 1.4× 19 641
S. Paul Germany 14 482 1.4× 256 0.9× 148 0.8× 113 0.9× 107 0.9× 57 654
M. Quillec France 16 746 2.2× 782 2.6× 264 1.4× 38 0.3× 85 0.7× 61 982
M. Tabe Japan 12 811 2.4× 362 1.2× 209 1.1× 78 0.6× 184 1.6× 29 914
Kenzo Fujiwara Japan 16 379 1.1× 459 1.6× 132 0.7× 37 0.3× 23 0.2× 53 585
Rolf Lauer Germany 7 107 0.3× 148 0.5× 153 0.8× 57 0.4× 44 0.4× 11 397
И. А. Каплунов Russia 10 190 0.6× 175 0.6× 112 0.6× 98 0.8× 72 0.6× 97 382
Tokuzo Sukegawa Japan 11 320 0.9× 240 0.8× 127 0.7× 21 0.2× 48 0.4× 72 413
Uwe Scheithauer Germany 5 120 0.3× 189 0.6× 113 0.6× 37 0.3× 53 0.5× 18 350

Countries citing papers authored by Ezra Bussmann

Since Specialization
Citations

This map shows the geographic impact of Ezra Bussmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ezra Bussmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ezra Bussmann more than expected).

Fields of papers citing papers by Ezra Bussmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ezra Bussmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ezra Bussmann. The network helps show where Ezra Bussmann may publish in the future.

Co-authorship network of co-authors of Ezra Bussmann

This figure shows the co-authorship network connecting the top 25 collaborators of Ezra Bussmann. A scholar is included among the top collaborators of Ezra Bussmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ezra Bussmann. Ezra Bussmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Peña, Luis Fabián, J. Houston Dycus, Andrew Mounce, et al.. (2024). Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy. npj Quantum Information. 10(1). 11 indexed citations
2.
Kehayias, Pauli, et al.. (2022). Electric current paths in a Si:P delta-doped device imaged by nitrogen-vacancy diamond magnetic microscopy. Nanotechnology. 34(1). 15001–15001. 7 indexed citations
3.
Kehayias, Pauli, et al.. (2022). Current Paths in an Atomic Precision Advanced Manufactured Device Imaged by Nitrogen Vacancy Diamond Magnetic Microscopy.. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information).
4.
Sapkota, Keshab, Ping Lu, A. Alec Talin, et al.. (2021). Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid. Nanotechnology. 33(3). 35301–35301. 15 indexed citations
5.
Owen, James H. G., Andrew Baczewski, Scott Schmucker, et al.. (2021). Al-alkyls as acceptor dopant precursors for atomic-scale devices. Journal of Physics Condensed Matter. 33(46). 464001–464001. 5 indexed citations
6.
Bussmann, Ezra, James H. G. Owen, John N. Randall, et al.. (2021). Atomic-precision advanced manufacturing for Si quantum computing. MRS Bulletin. 46(7). 607–615. 21 indexed citations
7.
Katzenmeyer, Aaron M., Andrew Baczewski, Ezra Bussmann, et al.. (2021). Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques. Journal of Micro/Nanopatterning Materials and Metrology. 20(1). 6 indexed citations
8.
Koepke, Justin, Peter A. Schultz, Richard P. Muller, et al.. (2021). Impact of Incorporation Kinetics on Device Fabrication with Atomic Precision. Physical Review Applied. 16(5). 19 indexed citations
9.
Sapkota, Keshab, Serena Eley, Ezra Bussmann, et al.. (2019). Creation of nanoscale magnetic fields using nano-magnet arrays. AIP Advances. 9(7). 7 indexed citations
10.
Baczewski, Andrew, Ezra Bussmann, John King Gamble, et al.. (2018). Multiscale Modeling of Dopant Arrays in Silicon. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 2018. 1 indexed citations
11.
Delker, Collin, Jinkyoung Yoo, Ezra Bussmann, B. S. Swartzentruber, & Charles Thomas Harris. (2017). Dual-gate operation and carrier transport in SiGe p–n junction nanowires. Nanotechnology. 28(46). 46LT01–46LT01. 2 indexed citations
12.
Scrymgeour, David, Robert J Simonson, Ezra Bussmann, et al.. (2017). Determining the resolution of scanning microwave impedance microscopy using atomic-precision buried donor structures. Applied Surface Science. 423. 1097–1102. 15 indexed citations
13.
Bussmann, Ezra, M. S. Rudolph, Ganapathi Subramania, et al.. (2015). Scanning capacitance microscopy registration of buried atomic-precision donor devices. Nanotechnology. 26(8). 85701–85701. 18 indexed citations
14.
Leroy, Frédéric, Y. Saito, Fabien Cheynis, et al.. (2014). Nonequilibrium diffusion of reactive solid islands. Physical Review B. 89(23). 10 indexed citations
15.
Bussmann, Ezra & B. S. Swartzentruber. (2010). Ge Diffusion at the Si(100) Surface. Physical Review Letters. 104(12). 126101–126101. 11 indexed citations
16.
Bussmann, Ezra, Fabien Cheynis, Frédéric Leroy, & Pierre Müller. (2010). Thermal instability of silicon-on-insulator thin films measured by low-energy electron microscopy. IOP Conference Series Materials Science and Engineering. 12. 12016–12016. 15 indexed citations
17.
Bussmann, Ezra, et al.. (2009). Palladium diffusion into bulk copper via the (100) surface. Journal of Physics Condensed Matter. 21(31). 314016–314016. 4 indexed citations
18.
Bussmann, Ezra, et al.. (2008). One-Dimensional Defect-Mediated Diffusion of Si Adatoms on theSi(111)−(5×2)−AuSurface. Physical Review Letters. 101(26). 266101–266101. 19 indexed citations
19.
Bussmann, Ezra & C. C. Williams. (2006). Single-electron tunneling force spectroscopy of an individual electronic state in a nonconducting surface. Applied Physics Letters. 88(26). 28 indexed citations
20.
Bussmann, Ezra. (2001). S·P numbers in bases other than 10. The Mathematical Gazette. 85(503). 245–248.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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