H. Noge

1.2k total citations
39 papers, 892 citations indexed

About

H. Noge is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, H. Noge has authored 39 papers receiving a total of 892 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Atomic and Molecular Physics, and Optics, 24 papers in Electrical and Electronic Engineering and 11 papers in Biomedical Engineering. Recurrent topics in H. Noge's work include Semiconductor Quantum Structures and Devices (25 papers), Quantum and electron transport phenomena (11 papers) and Nanowire Synthesis and Applications (9 papers). H. Noge is often cited by papers focused on Semiconductor Quantum Structures and Devices (25 papers), Quantum and electron transport phenomena (11 papers) and Nanowire Synthesis and Applications (9 papers). H. Noge collaborates with scholars based in Japan, Netherlands and United Kingdom. H. Noge's co-authors include H. Sakaki, S. Koshiba, Hidefumi Akiyama, Takeshi Inoshita, Takao Someya, Y. Nakamura, Y. Nagamune, Akira Shimizu, H. Kano and Masahiro Tsuchiya and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

H. Noge

39 papers receiving 844 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Noge Japan 16 666 599 217 167 124 39 892
M. Fearn United Kingdom 15 583 0.9× 395 0.7× 281 1.3× 107 0.6× 119 1.0× 32 817
Igor P. Marko United Kingdom 18 853 1.3× 933 1.6× 281 1.3× 106 0.6× 165 1.3× 84 1.1k
G. B. Parravicini Italy 13 321 0.5× 236 0.4× 480 2.2× 95 0.6× 134 1.1× 30 836
V. Prosser Czechia 16 483 0.7× 481 0.8× 222 1.0× 91 0.5× 123 1.0× 64 755
B. Laurich United States 13 359 0.5× 418 0.7× 192 0.9× 64 0.4× 53 0.4× 23 584
T. A. Fisher United Kingdom 18 1.2k 1.8× 527 0.9× 186 0.9× 502 3.0× 211 1.7× 50 1.5k
Miguel Montes Bajo Spain 18 305 0.5× 600 1.0× 238 1.1× 98 0.6× 245 2.0× 63 787
Katsuhiro Uesugi Japan 16 901 1.4× 797 1.3× 358 1.6× 116 0.7× 440 3.5× 97 1.1k
K. P. Homewood United Kingdom 18 651 1.0× 665 1.1× 406 1.9× 89 0.5× 104 0.8× 66 923
Nicolas Bertru France 22 1.3k 1.9× 1.2k 2.0× 422 1.9× 274 1.6× 139 1.1× 90 1.5k

Countries citing papers authored by H. Noge

Since Specialization
Citations

This map shows the geographic impact of H. Noge's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Noge with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Noge more than expected).

Fields of papers citing papers by H. Noge

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Noge. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Noge. The network helps show where H. Noge may publish in the future.

Co-authorship network of co-authors of H. Noge

This figure shows the co-authorship network connecting the top 25 collaborators of H. Noge. A scholar is included among the top collaborators of H. Noge based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Noge. H. Noge is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ichikawa, Yukimi, Yoshiaki Osawa, H. Noge, & Makoto Konagai. (2019). Theoretical studies of silicon hetero-junction solar cells with rib structure. AIP Advances. 9(6). 7 indexed citations
2.
Takagishi, Hideyuki, H. Noge, Kimihiko Saito, & Michio Kondo. (2017). Fabrication of interdigitated back-contact silicon heterojunction solar cells on a 53-µm-thick crystalline silicon substrate by using the optimized inkjet printing method for etching mask formation. Japanese Journal of Applied Physics. 56(4). 40308–40308. 9 indexed citations
3.
Noge, H., et al.. (2015). Two-dimensional simulation of interdigitated back contact silicon heterojunction solar cells having overlapped p/i and n/i a-Si:H layers. Japanese Journal of Applied Physics. 54(8S1). 08KD17–08KD17. 15 indexed citations
4.
Kadoya, Yutaka, Takashi Yoshida, H. Noge, & H. Sakaki. (1998). Ultraclean etching of GaAs by HCl gas and in situ overgrowth of (Al)GaAs by molecular beam epitaxy. Journal of Applied Physics. 83(1). 567–576. 1 indexed citations
5.
Nakamura, Yusui, et al.. (1996). Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy. Japanese Journal of Applied Physics. 35(7R). 4038–4038. 6 indexed citations
6.
Yusa, G., H. Noge, Yutaka Kadoya, et al.. (1995). Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask. Japanese Journal of Applied Physics. 34(9B). L1198–L1198. 4 indexed citations
7.
Sakaki, H., G. Yusa, Takao Someya, et al.. (1995). Transport properties of two-dimensional electron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs quantum dots. Applied Physics Letters. 67(23). 3444–3446. 75 indexed citations
8.
Koshiba, S., Y. Nakamura, Masahiro Tsuchiya, et al.. (1994). Surface diffusion processes in molecular beam epitaxial growth of GaAs and AlAs as studied on GaAs (001)-(111)B facet structures. Journal of Applied Physics. 76(7). 4138–4144. 79 indexed citations
9.
Koshiba, S., Takao Someya, Ken Wada, et al.. (1994). Thermalization Effect on Radiative Decay of Excitons in Quantum Wires. Physical Review Letters. 72(13). 2123–2123. 7 indexed citations
10.
Sakaki, H. & H. Noge. (1994). Nanostructures and Quantum Effects. Springer series in materials science. 54 indexed citations
11.
Kadoya, Yutaka, H. Noge, & H. Sakaki. (1994). Effect of Ionized Impurities at Heterointerface on Concentration and Mobility of Two-Dimensional Electrons in Selectively Doped Heterojunction Structures. Japanese Journal of Applied Physics. 33(9R). 4859–4859. 4 indexed citations
12.
Nakamura, Y., Masahiro Tsuchiya, S. Koshiba, H. Noge, & H. Sakaki. (1994). Modulation of one-dimensional electron density in n-AlGaAs/GaAs edge quantum wire transistor. Applied Physics Letters. 64(19). 2552–2554. 20 indexed citations
13.
Nakamura, Y., Masahiro Tsuchiya, J. Motohisa, et al.. (1994). Formation of N-AlGaAs/GaAs edge quantum wire on (111)B micro facet by MBE and magnetic depopulation of quasi-one-dimensional electron gas. Solid-State Electronics. 37(4-6). 571–573. 7 indexed citations
14.
Yoshida, T., et al.. (1993). Electron beam-enhanced etching of InAs in Cl2 gas and novel in situ patterning of GaAs with an InAs mask layer. Applied Physics Letters. 63(13). 1789–1791. 6 indexed citations
15.
Kadoya, Yutaka, Takashi Yoshida, Takao Someya, et al.. (1993). Etching of InAs in HCl Gas and Selective Removal of InAs Layer on GaAs in Ultrahigh-Vacuum Processing System. Japanese Journal of Applied Physics. 32(10B). L1496–L1496. 3 indexed citations
16.
Someya, Takao, Hidefumi Akiyama, Yutaka Kadoya, et al.. (1993). Detection of oxygen incorporated in molecular-beam epitaxy grown GaAs-on-AlAs interfaces and AlAs layers by secondary ion mass spectrometry. Applied Physics Letters. 63(14). 1924–1926. 11 indexed citations
17.
Akimichi, Hitoshi, et al.. (1993). Light-Emitting Diodes Using Semiconducting Oligothiophenes. MRS Proceedings. 328. 7 indexed citations
18.
Nakamura, Yusui, et al.. (1993). Formation of Two-Dimensional Electron Gas in N-AlGaAs/GaAs Heterojunctions on (111)B Microfacets Grown by Molecular Beam Epitaxy on a Patterned (001) Substrate. Japanese Journal of Applied Physics. 32(3B). L383–L383. 5 indexed citations
19.
Noge, H., et al.. (1988). Antiphase domains in GaAs grown on a (001)-oriented Si substrate by molecular-beam epitaxy. Journal of Applied Physics. 64(4). 2246–2248. 20 indexed citations
20.
Noge, H., et al.. (1987). Molecular beam epitaxial growth of a GaAs layer free from antiphase domains on an exactly (100)-oriented Si substrate preheated at 1000°C. Journal of Crystal Growth. 83(3). 431–436. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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