Y. Hayashi

2.9k total citations
219 papers, 2.1k citations indexed

About

Y. Hayashi is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Y. Hayashi has authored 219 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 189 papers in Electrical and Electronic Engineering, 94 papers in Electronic, Optical and Magnetic Materials and 37 papers in Materials Chemistry. Recurrent topics in Y. Hayashi's work include Semiconductor materials and devices (126 papers), Copper Interconnects and Reliability (90 papers) and Advancements in Semiconductor Devices and Circuit Design (33 papers). Y. Hayashi is often cited by papers focused on Semiconductor materials and devices (126 papers), Copper Interconnects and Reliability (90 papers) and Advancements in Semiconductor Devices and Circuit Design (33 papers). Y. Hayashi collaborates with scholars based in Japan, United States and France. Y. Hayashi's co-authors include Kiyoshi Takeuchi, N. Furutake, Toshiharu Nagumo, Takashi Yamaguchi, N. Inoue, Toshio Kimura, Munehiro Tada, Takashi Hase, K. Imai and Shinji Yokogawa and has published in prestigious journals such as Journal of The Electrochemical Society, Journal of Materials Chemistry A and Journal of the American Ceramic Society.

In The Last Decade

Y. Hayashi

209 papers receiving 2.0k citations

Peers

Y. Hayashi
Comparison fields: 5 of 68
  • Electrical and Electronic Engineering 1.8k
  • Materials Chemistry 620
  • Electronic, Optical and Magnetic Materials 528
  • Biomedical Engineering 339
  • Mechanics of Materials 169
Replace Akinobu Teramoto with:
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Eric Joseph United States
Kee-Won Kwon South Korea
Yue Kuo United States
Jia‐Min Shieh Taiwan
Kristof Croes Belgium
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Ph. Roussel Belgium
Ilgu Yun South Korea
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Akinobu Teramoto Japan View profile →
Citations per field, relative to Y. Hayashi
Y. Hayashi · 1×
Citations per year, relative to Y. Hayashi
Y. Hayashi · 1×

Countries citing papers authored by Y. Hayashi

Since Specialization
Citations

This map shows the geographic impact of Y. Hayashi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Hayashi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Hayashi more than expected).

Fields of papers citing papers by Y. Hayashi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Hayashi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Hayashi. The network helps show where Y. Hayashi may publish in the future.

Co-authorship network of co-authors of Y. Hayashi

This figure shows the co-authorship network connecting the top 25 collaborators of Y. Hayashi. A scholar is included among the top collaborators of Y. Hayashi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. Hayashi. Y. Hayashi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
# Work Indexed citations
1 23
2 4
3 3
4 6
5
High-voltage complementary BEOL-FETs on Cu interconnects using N-type IGZO and P-type SnO dual oxide semiconductor channels
10
6 3
7 35
8
A novel BEOL transistor (BETr) with InGaZnO embedded in Cu-interconnects for on-chip high voltage I/Os in standard CMOS LSIs
30
9 100
10 1
11 2
12
Single-charge-based modeling of transistor characteristics fluctuations based on statistical measurement of RTN amplitude
33
13
Technology for High Reliability System LSIs
4
14 6
15 7
16
7-Mask Self-Aligned SiGe Base Bipolar Transistors with f_T of 80 GHz
3
17 3
18 1
19 1
20 1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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