Ilgu Yun

2.2k total citations
148 papers, 1.8k citations indexed

About

Ilgu Yun is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Ilgu Yun has authored 148 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 129 papers in Electrical and Electronic Engineering, 41 papers in Materials Chemistry and 24 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Ilgu Yun's work include Semiconductor materials and devices (53 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Thin-Film Transistor Technologies (34 papers). Ilgu Yun is often cited by papers focused on Semiconductor materials and devices (53 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Thin-Film Transistor Technologies (34 papers). Ilgu Yun collaborates with scholars based in South Korea, United States and Australia. Ilgu Yun's co-authors include Chang-Eun Kim, Edward Namkyu Cho, Pyung Moon, Jae-Min Myoung, Hyungjun Kim, Jae-Min Myoung, Do Young ‍Kim, Sungyeon Kim, Jungsik Bang and Min Soo Bae and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Ilgu Yun

138 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ilgu Yun South Korea 21 1.5k 1.0k 253 223 171 148 1.8k
Shaoqiang Chen China 27 1.8k 1.2× 1.3k 1.2× 224 0.9× 184 0.8× 522 3.1× 150 2.3k
Hyunseok Kim South Korea 20 870 0.6× 734 0.7× 266 1.1× 711 3.2× 465 2.7× 70 1.6k
Avinashi Kapoor India 22 1.2k 0.8× 784 0.8× 252 1.0× 367 1.6× 179 1.0× 125 1.9k
R. K. Sharma India 12 981 0.7× 1.2k 1.1× 307 1.2× 162 0.7× 101 0.6× 55 1.7k
Morteza Fathipour Iran 22 901 0.6× 703 0.7× 85 0.3× 377 1.7× 235 1.4× 127 1.4k
Guilei Wang China 20 1.4k 0.9× 409 0.4× 95 0.4× 406 1.8× 487 2.8× 166 1.6k
Sang Jun Lee South Korea 21 825 0.6× 350 0.3× 300 1.2× 514 2.3× 593 3.5× 114 1.3k
Woo‐Young Choi South Korea 20 1.4k 1.0× 333 0.3× 66 0.3× 249 1.1× 468 2.7× 166 1.7k
Zhuo Deng China 19 785 0.5× 270 0.3× 116 0.5× 181 0.8× 379 2.2× 74 1.2k

Countries citing papers authored by Ilgu Yun

Since Specialization
Citations

This map shows the geographic impact of Ilgu Yun's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ilgu Yun with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ilgu Yun more than expected).

Fields of papers citing papers by Ilgu Yun

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ilgu Yun. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ilgu Yun. The network helps show where Ilgu Yun may publish in the future.

Co-authorship network of co-authors of Ilgu Yun

This figure shows the co-authorship network connecting the top 25 collaborators of Ilgu Yun. A scholar is included among the top collaborators of Ilgu Yun based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ilgu Yun. Ilgu Yun is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lee, Seung-Min, Minkyu Lee, Dong Keun Lee, et al.. (2025). High-performance oxide semiconductor TFT with a-IGZO/In-rich a-IGZO heterostructure using quantum confinement effects: Enhancing mobility and reliability. Journal of Alloys and Compounds. 1036. 182035–182035.
2.
Hwang, Jihye & Ilgu Yun. (2024). Comparative analysis of capacitorless DRAM performance according to stacked junctionless gate-all-around structures. Solid-State Electronics. 223. 109036–109036.
3.
Kim, Jae Hun & Ilgu Yun. (2024). A Monolithically Integrated GaN-Based Light Emitting Transistor with a High On/Off Ratio and Low Gate Leakage Current. ACS Applied Electronic Materials. 6(11). 7876–7882.
4.
Kim, Hyungjun, et al.. (2023). Methodology for Plasma Diagnosis and Accurate Virtual Measurement Modeling Using Optical Emission Spectroscopy. IEEE Sensors Journal. 23(8). 8867–8875. 1 indexed citations
5.
Lee, Haewon & Ilgu Yun. (2023). TFET-Based Pixel Source Follower of CMOS Image Sensor for Improved Linearity and High Signal-to-Noise Ratio. IEEE Sensors Journal. 23(17). 19239–19244. 2 indexed citations
6.
Bae, Min Soo & Ilgu Yun. (2020). Impact of process variability in junctionless FinFETs due to random dopant fluctuation, gate work function variation, and oxide thickness variation. Semiconductor Science and Technology. 35(3). 35015–35015. 10 indexed citations
7.
Bae, Min Soo & Ilgu Yun. (2020). Unified compact model for junctionless multiple-gate FETs including source/drain extension regions. Physica Scripta. 95(12). 125001–125001. 3 indexed citations
8.
Yun, Ilgu, et al.. (2020). Degradation of Off-Phase Leakage Current of FinFETs and Gate-All-Around FETs Induced by the Self-Heating Effect in the High-Frequency Operation Regime. IEEE Transactions on Nanotechnology. 19. 308–314. 8 indexed citations
9.
Chae, Youngcheol, et al.. (2019). The Effect of a Deep Virtual Guard Ring on the Device Characteristics of Silicon Single Photon Avalanche Diodes. IEEE Transactions on Electron Devices. 66(7). 2986–2991. 26 indexed citations
10.
Chae, Youngcheol, et al.. (2017). Structure variation effects on device reliability of single photon avalanche diodes. Microelectronics Reliability. 76-77. 610–613. 1 indexed citations
11.
12.
Lee, Sang Hoon, et al.. (2014). Electrical Characteristics of Metal Catalyst-Assisted Etched Rough Silicon Nanowire Depending on the Diameter Size. ACS Applied Materials & Interfaces. 7(1). 929–934. 9 indexed citations
13.
Kim, Chang-Eun & Ilgu Yun. (2012). Device characteristics of InSnO thin-film transistors with a modulated channel. Semiconductor Science and Technology. 27(12). 125006–125006. 1 indexed citations
14.
Kim, Chang-Eun & Ilgu Yun. (2012). Effects of nitrogen doping on device characteristics of InSnO thin film transistor. Applied Physics Letters. 100(1). 29 indexed citations
15.
Kim, Chang-Eun & Ilgu Yun. (2012). Effects of the Interfacial Layer on Electrical Properties of TiO2-based High-k Dielectric Composite Films. ECS Transactions. 45(3). 89–92. 2 indexed citations
16.
Kim, Chang-Eun, Pyung Moon, Sungyeon Kim, et al.. (2009). Modeling of thermal annealing of Zno: Ga thin films for transparent conductive oxide using neural networks. 152–157. 1 indexed citations
17.
Kim, Chang-Eun, Hyun Soo Shin, Pyung Moon, Hyun Jae Kim, & Ilgu Yun. (2009). Modeling of In2O3-10 wt% ZnO thin film properties for transparent conductive oxide using neural networks. Current Applied Physics. 9(6). 1407–1410. 6 indexed citations
18.
19.
Yun, Ilgu, et al.. (2004). Characteristics of a planar InP/InGaAs avalanche photodiode with a thin multiplication layer. Journal of the Korean Physical Society. 44(4). 3 indexed citations
20.
Lee, Bongyong, et al.. (2004). Investigation of manufacturing variations of planar InP/InGaAs avalanche photodiodes for optical receivers. Microelectronics Journal. 35(8). 635–640. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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