M. Hane

665 total citations
60 papers, 449 citations indexed

About

M. Hane is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, M. Hane has authored 60 papers receiving a total of 449 indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 7 papers in Computational Mechanics. Recurrent topics in M. Hane's work include Semiconductor materials and devices (44 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Silicon and Solar Cell Technologies (19 papers). M. Hane is often cited by papers focused on Semiconductor materials and devices (44 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Silicon and Solar Cell Technologies (19 papers). M. Hane collaborates with scholars based in Japan, United States and Italy. M. Hane's co-authors include Kiyoshi Takeuchi, T. Ezaki, Hiroshi Matsumoto, Atsushi Oshiyama, Nobuyuki Ikarashi, Yoshiyuki Miyamoto, H. Sunamura, N. Furutake, Y. Hayashi and S. Saito and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M. Hane

53 papers receiving 421 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Hane Japan	13	422	84	72	33	30	60	449
I. Lagnado United States	11	403 1.0×	60 0.7×	87 1.2×	61 1.8×	10 0.3×	32	424
P. Roitman United States	11	447 1.1×	144 1.7×	67 0.9×	42 1.3×	3 0.1×	51	487
S. Chakravarthi United States	12	939 2.2×	108 1.3×	135 1.9×	66 2.0×	39 1.3×	23	996
J.T. Clemens United States	9	426 1.0×	33 0.4×	55 0.8×	54 1.6×	13 0.4×	31	454
Mark N. Ruberto United States	11	418 1.0×	77 0.9×	82 1.1×	42 1.3×	8 0.3×	23	458
G. Fuse Japan	12	346 0.8×	56 0.7×	43 0.6×	35 1.1×	6 0.2×	41	370
Hiroaki Arimura Belgium	15	620 1.5×	95 1.1×	82 1.1×	95 2.9×	6 0.2×	96	651
P. Charvát United States	4	390 0.9×	47 0.6×	56 0.8×	93 2.8×	9 0.3×	5	412
M. Yoshimi Japan	14	722 1.7×	73 0.9×	84 1.2×	101 3.1×	14 0.5×	54	743
Mototaka Kamoshida Japan	10	232 0.5×	68 0.8×	62 0.9×	23 0.7×	7 0.2×	34	281

Countries citing papers authored by M. Hane

Since Specialization

Citations

This map shows the geographic impact of M. Hane's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Hane with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Hane more than expected).

Fields of papers citing papers by M. Hane

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Hane. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Hane. The network helps show where M. Hane may publish in the future.

Co-authorship network of co-authors of M. Hane

This figure shows the co-authorship network connecting the top 25 collaborators of M. Hane. A scholar is included among the top collaborators of M. Hane based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Hane. M. Hane is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Sunamura, H., N. Furutake, S. Saito, et al.. (2013). High-voltage complementary BEOL-FETs on Cu interconnects using N-type IGZO and P-type SnO dual oxide semiconductor channels. Symposium on VLSI Technology. 10 indexed citations

Sunamura, H., M. Narihiro, S. Saito, et al.. (2012). Operation of functional circuit elements using BEOL-transistor with InGaZnO channel for on-chip high/low voltage bridging I/Os and high-current switches. 123–124. 17 indexed citations

Ikarashi, Nobuyuki, Hiroshi Takeda, Koichi Yako, & M. Hane. (2012). In-situ electron holography of surface potential response to gate voltage application in a sub-30-nm gate-length metal-oxide-semiconductor field-effect transistor. Applied Physics Letters. 100(14). 15 indexed citations

Inoue, N., S. Saito, N. Furutake, et al.. (2011). Highly reliable BEOL-transistor with oxygen-controlled InGaZnO and Gate/Drain offset design for high/low voltage bridging I/O operations. 7.4.1–7.4.4. 35 indexed citations

Ikarashi, Nobuyuki, Hiroshi Takeda, Koichi Yako, & M. Hane. (2011). Direct two-dimensional electrostatic potential cross-sectional mapping of sub-30-nm MOSFET under operation mode using electron holography. 6.2.1–6.2.4. 1 indexed citations

Yako, Koichi, et al.. (2010). Aggressive design of ultra-shallow junction for near-scaling-limit bulk planar CMOS by using raised source/drain extension structure and carbon co-implantion technology. 1–6.

Hane, M.. (2009). Millisecond Annealing Junctions for Near-Scaling-Limit Bulk CMOS Using Raised Source/Drain Extensions. ECS Transactions. 19(1). 63–70. 1 indexed citations

Takeda, Hiroshi, et al.. (2008). Source/drain engineering for high-performance deep sub-100nm Ge-pMOSFETs using Full-Band Monte Carlo simulation. 25. 113–116. 1 indexed citations

Takeda, Hiroshi, et al.. (2008). Impact of source-to-channel carrier injection properties on device performance of sub-100nm metal source/drain Ge-pMOSFETs. 58–59. 2 indexed citations

10.

Yako, Koichi, et al.. (2008). Aggressive design of millisecond annealing junctions for near-scaling-limit bulk CMOS using raised source/drain extensions. 1–4. 2 indexed citations

11.

Yako, Koichi, Nobuyuki Ikarashi, M. Narihiro, et al.. (2007). Pushing Planar Bulk CMOSFET Scaling to its Limit by Ultimately Shallow Diffusion-Less Junction. 151–154. 6 indexed citations

12.

Borland, John, et al.. (2007). Molecular Dopants and High Mass Dopants for HALO and Extension Implantation. 73–76. 4 indexed citations

13.

Ikarashi, Nobuyuki, et al.. (2006). Correlation among crystal defects, depletion regions and junction leakage in sub-30-nm gate-length MOSFETs: Direct examinations by electron holography. Symposium on VLSI Technology. 202–203. 1 indexed citations

14.

Yako, Koichi, et al.. (2006). 26 nm gate length CMOSFETs with aggressively reduced silicide position by using carbon cluster co-implanted raised source/drain extension structure. Symposium on VLSI Technology. 160–161. 1 indexed citations

15.

Narihiro, M., et al.. (2006). Sub-30nm Mosfet Fabrication Technology Incorporating Precise Dopant Profile Design using Diffusion-Less High-Activation Laser Annealing. 147–151. 2 indexed citations

16.

Hane, M., et al.. (2005). Boron diffusion model refinement and its effect on the calculation of reverse short channel effect. 30. 15–16. 1 indexed citations

17.

Hane, M., et al.. (2004). Simulation of high-temperature millisecond annealing-based on atomistic modeling of boron diffusion/activation in silicon. 975–978. 7 indexed citations

18.

Hane, M., et al.. (2003). Coupled atomistic 3D process/device simulation considering both line-edge roughness and random-discrete-dopant effects. 99–102. 11 indexed citations

19.

Wada, Takahiro, et al.. (2003). A 3-dimensional process-simulator based on an open architecture. 127–130.

20.

Hane, M. & Hiroshi Matsumoto. (2002). A model for boron short time diffusion after ion implantation. 32. 701–704.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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