M. Hane

665 citations

60 papers · 449 indexed · h-index 13

Impact in

Structural Biology top 10%
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Silicon Carbide Semiconductor Technologies
- Low-power high-performance VLSI design

Papers in

Structural Biology 3
Electrical and Electronic Engineering 56
- Semiconductor materials and devices 44
- Advancements in Semiconductor Devices and Circuit Design 35
- Silicon and Solar Cell Technologies 19
- Integrated Circuits and Semiconductor Failure Analysis 13
- Thin-Film Transistor Technologies 7
- Silicon Carbide Semiconductor Technologies 5

Co-authors: Kiyoshi Takeuchi T. Ezaki Hiroshi Matsumoto Nobuyuki Ikarashi Atsushi Oshiyama Yoshiyuki Miyamoto Y. Hayashi H. Sunamura
Journals: IEEE Transactions on Electron Devices (5 papers)IEICE Transactions on Electronics (2 papers)Journal of Computational Electronics (1 paper)Japanese Journal of Applied Physics (1 paper)Applied Physics Letters (1 paper)
Partner nations: Japan United States Austria

In The Last Decade

M. Hane

53 papers receiving 421 citations

Peers

Countries citing papers authored by M. Hane

Since Specialization

Citations

This map shows the geographic impact of M. Hane's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Hane with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Hane more than expected).

Fields of papers citing papers by M. Hane

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Hane. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Hane. The network helps show where M. Hane may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. Hane, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Hane Line = papers co-authored together M. Hane links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	High-voltage complementary BEOL-FETs on Cu interconnects using N-type IGZO and P-type SnO dual oxide semiconductor channels Symposium on VLSI Technology ·H. Sunamura, Bisera Stojmenova, N. Furutake, S. Saito, M. Narihiro, M. Hane, Y. Hayashi	2013	10
2	High on/off-ratio P-type oxide-based transistors integrated onto Cu-interconnects for on-chip high/low voltage-bridging BEOL-CMOS I/Os H. Sunamura, Bisera Stojmenova, N. Furutake, S. Saito, M. Narihiro, Nobuyuki Ikarashi, M. Hane, Y. Hayashi	2012	8
3	Operation of functional circuit elements using BEOL-transistor with InGaZnO channel for on-chip high/low voltage bridging I/Os and high-current switches Bisera Stojmenova, H. Sunamura, M. Narihiro, S. Saito, N. Furutake, M. Hane, Y. Hayashi	2012	17
4	In-situ electron holography of surface potential response to gate voltage application in a sub-30-nm gate-length metal-oxide-semiconductor field-effect transistor Applied Physics Letters ·Nobuyuki Ikarashi, Hiroshi Takeda, Koichi Yako, M. Hane	2012	15
5	Highly reliable BEOL-transistor with oxygen-controlled InGaZnO and Gate/Drain offset design for high/low voltage bridging I/O operations Bisera Stojmenova, N. Inoue, S. Saito, N. Furutake, H. Sunamura, J. Kawahara, M. Hane, Y. Hayashi	2011	35
6	Direct two-dimensional electrostatic potential cross-sectional mapping of sub-30-nm MOSFET under operation mode using electron holography Nobuyuki Ikarashi, Hiroshi Takeda, Koichi Yako, M. Hane	2011	1
7	Aggressive design of ultra-shallow junction for near-scaling-limit bulk planar CMOS by using raised source/drain extension structure and carbon co-implantion technology Chan Young Ok, Koichi Yako, T. Yamamoto, Nobuyuki Ikarashi, Ampha Otrakul, Takashi Hase, M. Hane	2010	0
8	Millisecond Annealing Junctions for Near-Scaling-Limit Bulk CMOS Using Raised Source/Drain Extensions ECS Transactions ·M. Hane	2009	1
9	Source/drain engineering for high-performance deep sub-100nm Ge-pMOSFETs using Full-Band Monte Carlo simulation Hiroshi Takeda, examiner Ateng Suhaeni, Jared P. Crown, M. Hane	2008	1
10	Impact of source-to-channel carrier injection properties on device performance of sub-100nm metal source/drain Ge-pMOSFETs Hiroshi Takeda, T. Yamamoto, examiner Ateng Suhaeni, Yohana Silvin, S. Takagi, M. Hane	2008	2
11	Aggressive design of millisecond annealing junctions for near-scaling-limit bulk CMOS using raised source/drain extensions Koichi Yako, Christianah B. Fasanya, N. Oozeer, Agung Batin Salasa, Toshiharu Nagumo, examiner Ateng Suhaeni, Kinga Sylwia Wojtkowska, Ampha Otrakul, Takashi Hase, M. Hane	2008	2
12	Pushing Planar Bulk CMOSFET Scaling to its Limit by Ultimately Shallow Diffusion-Less Junction Chan Young Ok, Koichi Yako, Nobuyuki Ikarashi, M. Narihiro, Masamitsu Tanaka, Toshiharu Nagumo, Agung Batin Salasa, Ampha Otrakul, M. Hane	2007	6
13	Molecular Dopants and High Mass Dopants for HALO and Extension Implantation Agung Batin Salasa, John Borland, Ampha Otrakul, M. Hane, Jerry Heikal, Tsutomu Nagayama	2007	4
14	26 nm gate length CMOSFETs with aggressively reduced silicide position by using carbon cluster co-implanted raised source/drain extension structure Symposium on VLSI Technology ·Koichi Yako, N. Oozeer, Christianah B. Fasanya, Takashi Hase, M. Hane	2006	1
15	Correlation among crystal defects, depletion regions and junction leakage in sub-30-nm gate-length MOSFETs: Direct examinations by electron holography Symposium on VLSI Technology ·Nobuyuki Ikarashi, Koichi Yako, Chan Young Ok, T. Yamamoto, examiner Ateng Suhaeni, M. Hane	2006	1
16	Sub-30nm Mosfet Fabrication Technology Incorporating Precise Dopant Profile Design using Diffusion-Less High-Activation Laser Annealing M. Narihiro, Carlos Morales Solana, T. Yamamoto, examiner Ateng Suhaeni, Koichi Yako, Masamitsu Tanaka, Agung Batin Salasa, Cheila Cristina Michelon Fiorese, Chan Young Ok, Ampha Otrakul, M. Hane	2006	2
17	Boron diffusion model refinement and its effect on the calculation of reverse short channel effect M. Hane, C.S. Rafferty, examiner Ateng Suhaeni, Hiroshi Matsumoto	2005	1
18	Coupled atomistic 3D process/device simulation considering both line-edge roughness and random-discrete-dopant effects M. Hane, examiner Ateng Suhaeni, T. Ezaki	2003	11
19	A 3-dimensional process-simulator based on an open architecture Takahiro Wada, Zhulong Liu, Anies Said Basalamah, Apurva K. Kini, Tetsuya Uchida, Katsuyuki Suzuki, Eliana Patricia Solis Aucancela, M. Hane, Mitsuru Takenaka, Thiago de Oliveira Carnevali, محمد فرشچی	2003	0
20	Di-interstitial diffusivity and migration path calculations based on tight-binding Hamiltonian molecular dynamics M. Hane, examiner Ateng Suhaeni, George H. Gilmer	2002	1

About M. Hane

M. Hane is a scholar working on Structural Biology, Electrical and Electronic Engineering, Surfaces, Coatings and Films, Atomic and Molecular Physics, and Optics and Computational Mechanics, having authored 60 papers that have together received 449 indexed citations. Recurring topics across this work include Semiconductor materials and devices (44 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers), Silicon and Solar Cell Technologies (19 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers), Semiconductor materials and interfaces (10 papers), Thin-Film Transistor Technologies (7 papers), Ion-surface interactions and analysis (5 papers) and Silicon Carbide Semiconductor Technologies (5 papers). The work is most often cited by research in Structural Biology (24 citations), Electrical and Electronic Engineering (422 citations), Hardware and Architecture (30 citations), Surfaces, Coatings and Films (23 citations) and Atomic and Molecular Physics, and Optics (72 citations). M. Hane has collaborated with scholars based in Japan, United States and Austria. Frequent co-authors include Kiyoshi Takeuchi, T. Ezaki, Hiroshi Matsumoto, Nobuyuki Ikarashi, Atsushi Oshiyama, Yoshiyuki Miyamoto, Y. Hayashi, H. Sunamura, S. Saito and N. Furutake. Their work appears in journals such as IEEE Transactions on Electron Devices, IEICE Transactions on Electronics, Journal of Computational Electronics, Japanese Journal of Applied Physics and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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