H. E. Boesch

3.3k total citations
54 papers, 2.7k citations indexed

About

H. E. Boesch is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, H. E. Boesch has authored 54 papers receiving a total of 2.7k indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 9 papers in Materials Chemistry. Recurrent topics in H. E. Boesch's work include Semiconductor materials and devices (48 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (20 papers). H. E. Boesch is often cited by papers focused on Semiconductor materials and devices (48 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (20 papers). H. E. Boesch collaborates with scholars based in United States. H. E. Boesch's co-authors include F. B. McLean, J.M. McGarrity, J.M. Benedetto, P.S. Winokur, Timothy R. Oldham, Aivars J. Lelis, J.P. Mize, G. A. Ausman, G.J. Dunn and L.R. Hite and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Nuclear Science and Semiconductor Science and Technology.

In The Last Decade

H. E. Boesch

54 papers receiving 2.6k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
H. E. Boesch	2.7k	434	333	71	66	54	2.7k
J.M. McGarrity	2.7k 1.0×	388 0.9×	330 1.0×	111 1.6×	47 0.7×	67	2.9k
N. S. Saks	2.8k 1.0×	364 0.8×	319 1.0×	107 1.5×	52 0.8×	83	2.8k
G. Declerck	1.1k 0.4×	140 0.3×	401 1.2×	43 0.6×	30 0.5×	83	1.2k
P. J. McMarr	962 0.4×	353 0.8×	400 1.2×	38 0.5×	209 3.2×	65	1.3k
E. Kubalek	583 0.2×	176 0.4×	365 1.1×	42 0.6×	33 0.5×	97	795
G. Lippert	1.4k 0.5×	1.1k 2.5×	619 1.9×	165 2.3×	64 1.0×	82	1.9k
C. Claeys	1.6k 0.6×	258 0.6×	398 1.2×	23 0.3×	56 0.8×	164	1.7k
Richard L. Petritz	1.1k 0.4×	669 1.5×	604 1.8×	131 1.8×	21 0.3×	19	1.4k
D.J. Fitzgerald	1.1k 0.4×	141 0.3×	300 0.9×	18 0.3×	26 0.4×	43	1.2k
Andrey O. Konstantinov	1.6k 0.6×	445 1.0×	433 1.3×	267 3.8×	38 0.6×	83	1.8k

Countries citing papers authored by H. E. Boesch

Since Specialization

Citations

This map shows the geographic impact of H. E. Boesch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. E. Boesch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. E. Boesch more than expected).

Fields of papers citing papers by H. E. Boesch

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. E. Boesch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. E. Boesch. The network helps show where H. E. Boesch may publish in the future.

Co-authorship network of co-authors of H. E. Boesch

This figure shows the co-authorship network connecting the top 25 collaborators of H. E. Boesch. A scholar is included among the top collaborators of H. E. Boesch based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. E. Boesch. H. E. Boesch is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Boesch, H. E., et al.. (2001). High-Intensity Infrasonic Acoustic Test System that Uses a Two-Volume Helmholtz Resonator. Journal of the Audio Engineering Society. 49(12). 1131–1147. 2 indexed citations

Boesch, H. E., et al.. (2000). Prediction of successive radial shock-on-shock interactions using thin shell model. 38th Aerospace Sciences Meeting and Exhibit. 4 indexed citations

Boesch, H. E., et al.. (2000). Experimental and theoretical considerations for tailoring acoustic pulses from multi-shocktube sources. 38th Aerospace Sciences Meeting and Exhibit. 5 indexed citations

Boesch, H. E., et al.. (1994). Measurement and modeling of radiation response of multilayer BESOI buried insulators. IEEE Transactions on Nuclear Science. 41(6). 2322–2331. 3 indexed citations

Boesch, H. E., et al.. (1993). Radiation-induced charge effects in buried oxides with different processing treatments. IEEE Transactions on Nuclear Science. 40(6). 1765–1773. 8 indexed citations

Boesch, H. E., et al.. (1991). Charge buildup at high dose and low fields in SIMOX buried oxides. IEEE Transactions on Nuclear Science. 38(6). 1234–1239. 35 indexed citations

Boesch, H. E., et al.. (1990). Time-dependent hole and electron trapping effects in SIMOX buried oxides. IEEE Transactions on Nuclear Science. 37(6). 1982–1989. 69 indexed citations

Boesch, H. E., et al.. (1990). Determination of the charge-trapping characteristics of buried oxides using a 10-keV X-ray source. IEEE Transactions on Nuclear Science. 37(6). 1990–1994. 29 indexed citations

Oldham, Timothy R., F. B. McLean, H. E. Boesch, & J.M. McGarrity. (1989). An Overview of Radiation-Induced Interface Traps in MOS (Metal-Oxide Semiconductor) Structures. Final Report. 2 indexed citations

10.

Lelis, Aivars J., H. E. Boesch, Timothy R. Oldham, & F. B. McLean. (1988). Reversibility of trapped hole annealing. IEEE Transactions on Nuclear Science. 35(6). 1186–1191. 163 indexed citations

11.

Benedetto, J.M. & H. E. Boesch. (1986). The Relationship between 60Co and 10-keV X-Ray Damage in MOS Devices. IEEE Transactions on Nuclear Science. 33(6). 1317–1323. 170 indexed citations

12.

Boesch, H. E.. (1986). A Proposed Scheme for Measuring and Categorizing the Total Ionizing Radiation Dose Response of MOS Devices. IEEE Transactions on Nuclear Science. 33(6). 1337–1342. 2 indexed citations

13.

Boesch, H. E. & F. B. McLean. (1985). Hole Transport and Trapping in Field Oxides. IEEE Transactions on Nuclear Science. 32(6). 3940–3945. 74 indexed citations

14.

Benedetto, J.M. & H. E. Boesch. (1984). Mosfet and MOS Capacitor Responses to Ionizing Radiation. IEEE Transactions on Nuclear Science. 31(6). 1461–1466. 69 indexed citations

15.

Boesch, H. E. & J.M. McGarrity. (1979). An Electrical Technique to Measure the Radiation Susceptibility of MOS Gate Insulators. IEEE Transactions on Nuclear Science. 26(6). 4814–4818. 28 indexed citations

16.

Boesch, H. E., F. B. McLean, J.M. McGarrity, & P.S. Winokur. (1978). Enhanced Flatband Voltage Recovery in Hardened Thin MOS Capacitors. IEEE Transactions on Nuclear Science. 25(6). 1239–1245. 41 indexed citations

17.

Boesch, H. E. & J.M. McGarrity. (1977). Charge yield and dose effects in MOS capacitors at 80/sup 0/K. Technical report. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 40(5 Pt 2). 59–60. 1 indexed citations

18.

Boesch, H. E.. (1976). Development of apparatus for performing rapid capacitance-voltage measurements on MIS structures. Defense Technical Information Center (DTIC). 77. 25448. 2 indexed citations

19.

McLean, F. B., G. A. Ausman, H. E. Boesch, & J.M. McGarrity. (1976). Application of stochastic hopping transport to hole conduction in amorphous SiO2. Journal of Applied Physics. 47(4). 1529–1532. 47 indexed citations

20.

Boesch, H. E. & J.M. McGarrity. (1976). Charge Yield and Dose Effects in MOS Capacitors at 80 K. IEEE Transactions on Nuclear Science. 23(6). 1520–1525. 131 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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