D.E. Burk

1.5k citations

46 papers · 1.2k · h-index 15

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Radio Frequency Integrated Circuit Design
- Silicon Carbide Semiconductor Technologies
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 39
- Silicon and Solar Cell Technologies 23
- Advancements in Semiconductor Devices and Circuit Design 17
- Semiconductor materials and devices 14
- Thin-Film Transistor Technologies 8
- Silicon Carbide Semiconductor Technologies 6
- Integrated Circuits and Semiconductor Failure Analysis 5
Atomic and Molecular Physics, and Optics 17
- Semiconductor materials and interfaces 15

Co-authors: H. Cho (3 shared papers)Dongsuk Jeon (2 shared papers)J. DuBow (6 shared papers)J. Shewchun (5 shared papers)James R. Sites (2 shared papers)M. B. Spitzer (4 shared papers)R. Sundaresan (5 shared papers)Muxuan Liang (1 shared paper)
Journals: IEEE Transactions on Electron Devices (11 papers)Solid-State Electronics (7 papers)Journal of Applied Physics (6 papers)Applied Physics Letters (3 papers)Semiconductor Science and Technology (2 papers)
Partner nations: United States South Korea Canada

In The Last Decade

D.E. Burk

45 papers receiving 1.1k citations

Peers

Countries citing papers authored by D.E. Burk

Since Specialization

Citations

This map shows the geographic impact of D.E. Burk's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.E. Burk with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.E. Burk more than expected).

Fields of papers citing papers by D.E. Burk

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.E. Burk. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.E. Burk. The network helps show where D.E. Burk may publish in the future.

Co-authors

The 25 scholars most cited alongside D.E. Burk, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D.E. Burk Line = papers co-authored together D.E. Burk links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 46 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	A three-step method for the de-embedding of high-frequency S-parameter measurements IEEE Transactions on Electron Devices ·H. Cho, D.E. Burk	1991	246
2	Efficient photovoltaic heterojunctions of indium tin oxides on silicon Applied Physics Letters ·J. DuBow, D.E. Burk, James R. Sites	1976	125
3	MOSFET electron inversion layer mobilities - a physically based semi-empirical model for a wide temperature range IEEE Transactions on Electron Devices ·Dongsuk Jeon, D.E. Burk	1989	116
4	Self-consistent model of minority-carrier lifetime, diffusion length, and mobility IEEE Electron Device Letters ·Mark E. Law, E. Solley, Muxuan Liang, D.E. Burk	1991	99
5	The operation of the semiconductor-insulator-semiconductor solar cell: Experiment Journal of Applied Physics ·J. Shewchun, J. DuBow, C. W. Wilmsen, Ranbir Singh, D.E. Burk, John F. Wager	1979	99
6	MIS and SIS solar cells IEEE Transactions on Electron Devices ·J. Shewchun, D.E. Burk, M. B. Spitzer	1980	94
7	A temperature-dependent SOI MOSFET model for high-temperature application (27 degrees C-300 degrees C) IEEE Transactions on Electron Devices ·Dongsuk Jeon, D.E. Burk	1991	67
8	An empirical fit to minority hole mobilities IEEE Electron Device Letters ·D.E. Burk, V. de la Torre	1984	39
9	Potential improvement of polysilicon solar cells by grain boundary and intragrain diffusion of aluminum Journal of Applied Physics ·R. Sundaresan, D.E. Burk, J.G. Fossum	1984	39
10	Highly Conductive Flexible Multi-Walled Carbon Nanotube Sheet Films for Transparent Touch Screen Japanese Journal of Applied Physics ·Daewoong Jung, Kyung Hwan Lee, Donghyun Kim, D.E. Burk, Lawrence Overzet, Gil Sik Lee	2013	38
11	The semiconductor-insulator-semiconductor (indium tin oxide on silicon) solar cell: Characteristics and loss mechanisms Journal of Applied Physics ·J. Shewchun, D.E. Burk, Ranbir Singh, M. B. Spitzer, J. DuBow	1979	30
12	Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantation Applied Physics Letters ·F.T. Brady, S. S. Li, D.E. Burk, W. Krull	1988	23
13	Determination of surface recombination velocity at a grain boundary using electron-beam-induced current Journal of Applied Physics ·D.E. Burk, S. Kanner, J. E. Muyshondt, D. S. Shaulis, P. E. Russell	1983	20
14	Optimizing Control of Fe Catalysts for Carbon Nanotube Growth Journal of Nanoscience and Nanotechnology ·Dae Woong Jung, Kyung H. Lee, Jae Hak Kim, D.E. Burk, Lawrence Overzet, Gil Sik Lee, Seong Ho Kong	2012	20
15	Diffusion length and grain-boundary recombination velocity measurements with the scanning electron microscope in a finite polysilicon grain Solid-State Electronics ·R. Sundaresan, D.E. Burk	1984	17
16	Physical modeling of the power VDMOST for computer-aided design of integrated circuit IEEE Transactions on Electron Devices ·C. Tsai, D.E. Burk, Khai D. T. Ngo	1997	14
17	The importance of the excitation volume in determination of surface recombination velocity IEEE Transactions on Electron Devices ·D.E. Burk	1982	13
18	An intrinsic base resistance model for low and high currents IEEE Transactions on Electron Devices ·Mincheol Jo, D.E. Burk	1990	12
19	Informed device design and gain-speed trade-off for self-aligned polysilicon-emitter transistors Solid-State Electronics ·S.-Y. Yung, D.E. Burk	1988	10
20	Demonstration of excitation-dependent grain-boundary recombination velocity in polycrystalline silicon Journal of Applied Physics ·R. Sundaresan, J.G. Fossum, D.E. Burk	1984	9

About D.E. Burk

D.E. Burk is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Surfaces, Coatings and Films, having authored 46 papers that have together received 1.2k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (23 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers), Semiconductor materials and interfaces (15 papers), Semiconductor materials and devices (14 papers), Thin-Film Transistor Technologies (8 papers), Carbon Nanotubes in Composites (6 papers), Silicon Carbide Semiconductor Technologies (6 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Atomic and Molecular Physics, and Optics (348 citations), Materials Chemistry (338 citations), Polymers and Plastics (60 citations) and Biomedical Engineering (151 citations). D.E. Burk has collaborated with scholars based in United States, South Korea and Canada. Frequent co-authors include H. Cho, Dongsuk Jeon, J. DuBow, J. Shewchun, James R. Sites, M. B. Spitzer, R. Sundaresan, Muxuan Liang, Mark E. Law and Ranbir Singh. Their work appears in journals such as IEEE Transactions on Electron Devices, Solid-State Electronics, Journal of Applied Physics, Applied Physics Letters and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

D.E. Burk

Impact in

Papers in i

In The Last Decade

D.E. Burk

Peers

Countries citing papers authored by D.E. Burk

Fields of papers citing papers by D.E. Burk

All Works

About D.E. Burk

Explore authors with similar magnitude of impact

Papers in