D.E. Burk

1.5k total citations
46 papers, 1.2k citations indexed

About

D.E. Burk is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, D.E. Burk has authored 46 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in D.E. Burk's work include Silicon and Solar Cell Technologies (23 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Semiconductor materials and interfaces (15 papers). D.E. Burk is often cited by papers focused on Silicon and Solar Cell Technologies (23 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Semiconductor materials and interfaces (15 papers). D.E. Burk collaborates with scholars based in United States, South Korea and Canada. D.E. Burk's co-authors include H. Cho, Dongsuk Jeon, J. DuBow, J. Shewchun, James R. Sites, M. B. Spitzer, R. Sundaresan, Mark E. Law, Muxuan Liang and Ranbir Singh and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Carbon.

In The Last Decade

D.E. Burk

45 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D.E. Burk United States	15	1.1k	348	338	151	60	46	1.2k
Tsu-Jae King United States	12	1.2k 1.0×	273 0.8×	315 0.9×	154 1.0×	22 0.4×	23	1.3k
F. Ducroquet France	16	798 0.7×	242 0.7×	341 1.0×	78 0.5×	31 0.5×	71	887
Takayuki Aoyama Japan	17	907 0.8×	234 0.7×	328 1.0×	106 0.7×	16 0.3×	145	1.1k
Joseph J. Kopanski United States	18	836 0.8×	578 1.7×	217 0.6×	355 2.4×	27 0.5×	70	1.1k
S. Koveshnikov United States	16	916 0.8×	365 1.0×	250 0.7×	68 0.5×	17 0.3×	83	1.0k
А.С. Гудовских Russia	18	820 0.7×	480 1.4×	348 1.0×	253 1.7×	24 0.4×	150	1.0k
S. Kochowski Poland	12	368 0.3×	165 0.5×	132 0.4×	187 1.2×	36 0.6×	29	483
Sang‐Hwan Cho South Korea	12	519 0.5×	167 0.5×	227 0.7×	100 0.7×	92 1.5×	26	695
Bouraoui Ilahi Tunisia	17	665 0.6×	412 1.2×	499 1.5×	277 1.8×	120 2.0×	95	923
G. Kamarinos France	19	1.2k 1.1×	244 0.7×	412 1.2×	136 0.9×	18 0.3×	113	1.3k

Countries citing papers authored by D.E. Burk

Since Specialization

Citations

This map shows the geographic impact of D.E. Burk's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.E. Burk with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.E. Burk more than expected).

Fields of papers citing papers by D.E. Burk

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.E. Burk. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.E. Burk. The network helps show where D.E. Burk may publish in the future.

Co-authorship network of co-authors of D.E. Burk

This figure shows the co-authorship network connecting the top 25 collaborators of D.E. Burk. A scholar is included among the top collaborators of D.E. Burk based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D.E. Burk. D.E. Burk is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Jung, Daewoong, Sang‐Kwon Lee, Kyung H. Lee, et al.. (2012). Highly conductive transparent multi-walled carbon nanotube films for touch screen. 101–102. 2 indexed citations

Jung, Daewoong, Sang‐Kwon Lee, Kyung H. Lee, et al.. (2012). A temperature-independent multi-walled carbon-nanotube sheet electrode for transparent touch screen. 99–100. 3 indexed citations

Lee, Kyung H., et al.. (2012). Optimizing Control of Fe Catalysts for Carbon Nanotube Growth. Journal of Nanoscience and Nanotechnology. 12(7). 5663–5668. 20 indexed citations

Burk, D.E., et al.. (2003). A multi-regional small-signal model derived from the charge-based large-signal bipolar transistor model. 34. 111–113. 1 indexed citations

Burk, D.E., et al.. (2002). A physically based DMOS transistor model implemented in SPICE for advanced power IC TCAD. 340–345. 2 indexed citations

Choi, Myungjoon & D.E. Burk. (1993). The peripheral bipolar junction transistor and its relation to predictability in device modeling. Solid-State Electronics. 36(1). 35–40. 2 indexed citations

Hummel, Rolf E., et al.. (1992). The effect of Fe, Cr and Mo on the resistivity of the top silicon layer of buried oxide silicon-on-insulator structures. Semiconductor Science and Technology. 7(8). 1067–1071. 2 indexed citations

Jeon, Dongsuk & D.E. Burk. (1991). A temperature-dependent SOI MOSFET model for high-temperature application (27 degrees C-300 degrees C). IEEE Transactions on Electron Devices. 38(9). 2101–2111. 67 indexed citations

Cho, Hanjin, et al.. (1991). A charge-based small-signal model for the bipolar junction transistor. Solid-State Electronics. 34(8). 893–901. 5 indexed citations

10.

Brady, F.T., et al.. (1988). Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantation. Applied Physics Letters. 52(11). 886–888. 23 indexed citations

11.

Burk, D.E., et al.. (1988). Impurity segregation correlated with microstructure in buried oxide silicon-on-insulator structures. Applied Physics Letters. 53(2). 122–124. 3 indexed citations

12.

Fossum, J.G., et al.. (1985). Effective minority-carrier mobility in heavily doped silicon defined by trapping and energy-gap narrowing. IEEE Transactions on Electron Devices. 32(9). 1874–1877. 6 indexed citations

13.

Sundaresan, R. & D.E. Burk. (1984). Diffusion length and grain-boundary recombination velocity measurements with the scanning electron microscope in a finite polysilicon grain. Solid-State Electronics. 27(2). 177–185. 17 indexed citations

14.

Burk, D.E., et al.. (1984). An empirical fit to minority hole mobilities. IEEE Electron Device Letters. 5(7). 231–233. 39 indexed citations

15.

Sundaresan, R., J.G. Fossum, & D.E. Burk. (1984). Demonstration of excitation-dependent grain-boundary recombination velocity in polycrystalline silicon. Journal of Applied Physics. 56(4). 964–970. 9 indexed citations

16.

Burk, D.E., et al.. (1983). Determination of surface recombination velocity at a grain boundary using electron-beam-induced current. Journal of Applied Physics. 54(1). 169–173. 20 indexed citations

17.

Sundaresan, R., D.E. Burk, & J.G. Fossum. (1982). Improvement of polysilicon solar cells by aluminum diffusion. Photovoltaic Specialists Conference. 421–426. 1 indexed citations

18.

Shewchun, J., Ranbir Singh, D.E. Burk, et al.. (1978). The photovoltaic effect in interfacial layer heterojunctions or semiconductor-insulator-semiconductor diodes - Indium-tin-oxide on silicon, gallium arsenide and indium phosphide. Photovoltaic Specialists Conference. 528–535. 2 indexed citations

19.

Burk, D.E., J. DuBow, & J. R. Sites. (1976). Fabrication of OSOS cells by neutral ion beam sputtering. Photovoltaic Specialists Conference. 971–974. 1 indexed citations

20.

DuBow, J., D.E. Burk, & James R. Sites. (1975). Solar cells of indium tin oxide on silicon. 230–232. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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