F.T. Brady

404 total citations
24 papers, 281 citations indexed

About

F.T. Brady is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Cellular and Molecular Neuroscience. According to data from OpenAlex, F.T. Brady has authored 24 papers receiving a total of 281 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 3 papers in Atomic and Molecular Physics, and Optics and 1 paper in Cellular and Molecular Neuroscience. Recurrent topics in F.T. Brady's work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). F.T. Brady is often cited by papers focused on Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). F.T. Brady collaborates with scholars based in United States, Belgium and Taiwan. F.T. Brady's co-authors include W. Krull, Shuguang Li, Ronald D. Brown, D.E. Burk, N.F. Haddad, Hayato Wakabayashi, P. J. McMarr, Thomas R. Scott, H.L. Hughes and B. J. Mrstik and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

In The Last Decade

F.T. Brady

18 papers receiving 270 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
F.T. Brady United States	11	269	27	22	21	20	24	281
C. Leyris France	9	207 0.8×	15 0.6×	15 0.7×	23 1.1×	12 0.6×	15	217
Adri J. Mierop Netherlands	6	330 1.2×	52 1.9×	91 4.1×	77 3.7×	12 0.6×	11	338
J.C. Vildeuil France	12	343 1.3×	13 0.5×	10 0.5×	18 0.9×	22 1.1×	23	349
E. Oda Japan	8	307 1.1×	91 3.4×	148 6.7×	64 3.0×	14 0.7×	20	322
Y. Ishihara Japan	8	319 1.2×	96 3.6×	153 7.0×	76 3.6×	12 0.6×	19	354
Yohtaro Umeda Japan	9	448 1.7×	3 0.1×	20 0.9×	10 0.5×	158 7.9×	66	462
Ching-Hung Chang Taiwan	13	620 2.3×	7 0.3×	22 1.0×	7 0.3×	90 4.5×	65	639
Akihide Sai Japan	11	288 1.1×	32 1.2×	6 0.3×	2 0.1×	11 0.6×	24	315
Aroutin Khachaturian United States	8	272 1.0×	26 1.0×	23 1.0×	12 0.6×	94 4.7×	16	314
Tingzhao Fu China	7	311 1.2×	6 0.2×	7 0.3×	6 0.3×	69 3.5×	22	377

Countries citing papers authored by F.T. Brady

Since Specialization

Citations

This map shows the geographic impact of F.T. Brady's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F.T. Brady with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F.T. Brady more than expected).

Fields of papers citing papers by F.T. Brady

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F.T. Brady. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F.T. Brady. The network helps show where F.T. Brady may publish in the future.

Co-authorship network of co-authors of F.T. Brady

This figure shows the co-authorship network connecting the top 25 collaborators of F.T. Brady. A scholar is included among the top collaborators of F.T. Brady based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F.T. Brady. F.T. Brady is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ebiko, Y., H. Yamagishi, Keiji Tatani, et al.. (2020). Low power consumption and high resolution 1280X960 Gate Assisted Photonic Demodulator pixel for indirect Time of flight. 33.1.1–33.1.4. 20 indexed citations

Brady, F.T., et al.. (2018). A 1/4-inch 3.9Mpixel low-power event-driven back-illuminated stacked CMOS image sensor. 86–88. 43 indexed citations

Brady, F.T., et al.. (2005). Effect of Total Dose Radiation on Device Self Latch-Up. 88–89. 5 indexed citations

Acovic, A., et al.. (2005). Hot-Carrier Reliability of Fully Depleted Accumulation Mode Soi Mosfets. 134–135. 1 indexed citations

Brady, F.T., et al.. (2005). Temperature Sensitivity of Devices and Circuits Fabricated in Fully Depleted Accumulation Mode Cmos/sol. 90–91.

Brady, F.T., Shuguang Li, & W. Krull. (2003). A detailed study of the changes in buried oxide charge as a function of processing and irradiation. 156–157.

Brady, F.T., et al.. (2003). Studies of defects and buried oxides in SIMOX based SOI materials. 63–63.

Brady, F.T., et al.. (2002). Evaluation of the performance and reliability of a 1M SRAM on fully-depleted SOI. 129–130. 1 indexed citations

Brady, F.T., et al.. (2002). Low-field charge injection in SIMOX buried oxides. 158–159.

10.

Brady, F.T., et al.. (1999). A scaleable, radiation hardened shallow trench isolation. IEEE Transactions on Nuclear Science. 46(6). 1836–1840. 56 indexed citations

11.

Duan, Franklin L., Soumendu Sinha, Dimitris E. Ioannou, & F.T. Brady. (1997). LDD design tradeoffs for single transistor latch-up and hot carrier degradation control in accumulation mode FD SOI MOSFET's. IEEE Transactions on Electron Devices. 44(6). 972–977. 9 indexed citations

12.

Brady, F.T., et al.. (1994). Fully-depleted submicron SOI for radiation hardened applications. IEEE Transactions on Nuclear Science. 41(6). 2304–2309. 22 indexed citations

13.

Brady, F.T., et al.. (1990). Radiation-induced charge trapping in implanted buried oxides. Journal of Applied Physics. 68(12). 6143–6148. 10 indexed citations

14.

Brady, F.T., Shuguang Li, & W. Krull. (1990). A study of the effects of processing on the response of implanted buried oxides to total dose irradiation. IEEE Transactions on Nuclear Science. 37(6). 1995–2000. 6 indexed citations

15.

Brady, F.T., Shuguang Li, & W. Krull. (1990). An electrical study of SIMOX material by a quick-turn-around approach. Solid-State Electronics. 33(12). 1643–1646. 4 indexed citations

16.

Brady, F.T., S. S. Li, & W. Krull. (1989). C-V and C-t analysis of buried oxide layers formed by high-dose oxygen implantation. Journal of Electronic Materials. 18(3). 385–389. 5 indexed citations

17.

Brady, F.T., et al.. (1989). A new technique for determining the generation lifetime profile in thin semiconductor films with application to silicon-on-insulator (SOI) substrates. IEEE Electron Device Letters. 10(11). 496–499. 4 indexed citations

18.

Brady, F.T., W. Krull, & Shuguang Li. (1989). Total dose radiation effects for implanted buried oxides. IEEE Transactions on Nuclear Science. 36(6). 2187–2191. 11 indexed citations

19.

Brady, F.T., et al.. (1988). Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantation. Applied Physics Letters. 52(11). 886–888. 23 indexed citations

20.

Brady, F.T.. (1984). A Mathematical Model for the Doubly-Fed Wound Rotor Generator. IEEE Transactions on Power Apparatus and Systems. PAS-103(4). 798–802. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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