F. J. Pacheco

620 total citations
23 papers, 535 citations indexed

About

F. J. Pacheco is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, F. J. Pacheco has authored 23 papers receiving a total of 535 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Condensed Matter Physics, 16 papers in Electrical and Electronic Engineering and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in F. J. Pacheco's work include GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and devices (10 papers) and Semiconductor Quantum Structures and Devices (8 papers). F. J. Pacheco is often cited by papers focused on GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and devices (10 papers) and Semiconductor Quantum Structures and Devices (8 papers). F. J. Pacheco collaborates with scholars based in Spain, France and United Kingdom. F. J. Pacheco's co-authors include Sergio I. Molina, R. Garcı́a, E. Calleja, Ana M. Sánchez, M. A. Sánchez-Garcı́a, F.J. Sánchez, E. Muñoz, F. Calle, F. B. Naranjo and P. Kidd and has published in prestigious journals such as Applied Physics Letters, Thin Solid Films and Journal of Crystal Growth.

In The Last Decade

F. J. Pacheco

23 papers receiving 525 citations

Peers

F. J. Pacheco

CMP

EEE

AMPO

EOMM

R. Smithey Germany

D. Seghier Iceland

Z-Q. Fang United States

K. Khachaturyan United States

Kartik Senapati India

J. S. Horwitz United States

Dojun Youm South Korea

R. Mair United States

Michael K. Kelly United States

M.P. Kulakov Russia

R. Smithey Germany

F. J. Pacheco

477 ×1.5

CMP

121 ×0.4

EEE

199 ×0.8

AMPO

284 ×1.7

182 ×1.1

EOMM

Citations per year, relative to F. J. Pacheco F. J. Pacheco (= 1×) peers R. Smithey

Countries citing papers authored by F. J. Pacheco

Since Specialization

Citations

This map shows the geographic impact of F. J. Pacheco's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. J. Pacheco with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. J. Pacheco more than expected).

Fields of papers citing papers by F. J. Pacheco

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. J. Pacheco. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. J. Pacheco. The network helps show where F. J. Pacheco may publish in the future.

Co-authorship network of co-authors of F. J. Pacheco

This figure shows the co-authorship network connecting the top 25 collaborators of F. J. Pacheco. A scholar is included among the top collaborators of F. J. Pacheco based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. J. Pacheco. F. J. Pacheco is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Bustarret, E., D. Araújo, Francisco M. Morales, et al.. (2004). Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy. Materials science forum. 457-460. 277–280. 3 indexed citations

Akeroyd, A. G., M. A. Díaz, & F. J. Pacheco. (2004). Double fermiophobic Higgs boson production at the CERN LHC and a linear collider. Physical review. D. Particles, fields, gravitation, and cosmology. 70(7). 24 indexed citations

Sánchez, Ana M., P. Ruterana, Sergio I. Molina, F. J. Pacheco, & R. Garcı́a. (2002). Origin of Inversion Domains in GaN/AlN/Si(111) Heterostructures Grown by Molecular Beam Epitaxy. physica status solidi (b). 234(3). 935–938. 4 indexed citations

Sánchez, Ana M., F. J. Pacheco, Sergio I. Molina, et al.. (2002). AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(111). Materials Science and Engineering B. 93(1-3). 181–184. 6 indexed citations

Sánchez, Ana M., F. J. Pacheco, Sergio I. Molina, et al.. (2001). Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy. Materials Science and Engineering B. 80(1-3). 299–303. 3 indexed citations

Sánchez, Ana M., F. J. Pacheco, Sergio I. Molina, et al.. (2001). Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy. Applied Physics Letters. 78(18). 2688–2690. 12 indexed citations

Sánchez, Ana M., F. J. Pacheco, Sergio I. Molina, et al.. (2001). Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001). Journal of Electronic Materials. 30(5). L17–L20. 12 indexed citations

Sánchez, Ana M., G. Nouet, P. Rutérana, et al.. (2001). A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111). Applied Physics Letters. 79(22). 3588–3590. 13 indexed citations

Stemmer, J., F. Fedler, D. Mistele, et al.. (2000). High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy. Journal of Crystal Growth. 216(1-4). 15–20. 7 indexed citations

10.

Sánchez, Ana M., Sergio I. Molina, F. J. Pacheco, et al.. (2000). Efecto del dopado con Si sobre la estructura de defectos en sistemas heteroepitaxiales GaN/AlN/Si(111). Boletín de la Sociedad Española de Cerámica y Vidrio. 39(4). 468–471. 1 indexed citations

11.

Calleja, E., M. A. Sánchez-Garcı́a, F.J. Sánchez, et al.. (1999). Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties. Journal of Crystal Growth. 201-202. 296–317. 168 indexed citations

12.

Pacheco, F. J., Ana M. Sánchez, Sergio I. Molina, et al.. (1999). Electron microscopy study of SiC obtained by the carbonization of Si(111). Thin Solid Films. 343-344. 305–308. 11 indexed citations

13.

Sánchez-Garcı́a, M. A., F. B. Naranjo, J. L. Pau, et al.. (1999). Properties of Homoepitaxial and Heteroepitaxial GaN Layers Grown by Plasma-Assisted MBE. physica status solidi (a). 176(1). 447–452. 6 indexed citations

14.

Molina, Sergio I., Ana M. Sánchez, F. J. Pacheco, et al.. (1999). The effect of Si doping on the defect structure of GaN/AlN/Si(111). Applied Physics Letters. 74(22). 3362–3364. 49 indexed citations

15.

Sánchez-Garcı́a, M. A., E. Calleja, F. B. Naranjo, et al.. (1999). MBE growth of GaN and AlGaN layers on Si(111) substrates: doping effects. Journal of Crystal Growth. 201-202. 415–418. 20 indexed citations

16.

Sacedón, A., A.L. Álvarez, I. Izpura, et al.. (1997). Influence of the surface morphology on the relaxation of low-strained InxGa1 − xAs linear buffer structures. Journal of Crystal Growth. 182(3-4). 281–291. 10 indexed citations

17.

Dunstan, D. J., P. Kidd, Richard Beanland, et al.. (1996). Predictability of plastic relaxation in metamorphicepitaxy. Materials Science and Technology. 12(2). 181–186. 17 indexed citations

18.

Sacedón, A., E. Calleja, E. Muñoz, et al.. (1995). Design of InGaAs linear graded buffer structures. Applied Physics Letters. 66(24). 3334–3336. 68 indexed citations

19.

Molina, Sergio I., F. J. Pacheco, D. Araújo, et al.. (1994). Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation-free (<105 cm−2) and unstrained epilayers. Applied Physics Letters. 65(19). 2460–2462. 40 indexed citations

20.

Aragón, Gregorio, Sergio I. Molina, F. J. Pacheco, et al.. (1994). A study of the defect structure in GaAs layers grown at low and high temperatures on Si(001) substrates. Materials Science and Engineering B. 28(1-3). 196–199. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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