S. Ruffenach

700 total citations
27 papers, 542 citations indexed

About

S. Ruffenach is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, S. Ruffenach has authored 27 papers receiving a total of 542 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Atomic and Molecular Physics, and Optics, 15 papers in Condensed Matter Physics and 15 papers in Materials Chemistry. Recurrent topics in S. Ruffenach's work include GaN-based semiconductor devices and materials (15 papers), Semiconductor Quantum Structures and Devices (9 papers) and Topological Materials and Phenomena (9 papers). S. Ruffenach is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Semiconductor Quantum Structures and Devices (9 papers) and Topological Materials and Phenomena (9 papers). S. Ruffenach collaborates with scholars based in France, Russia and United Kingdom. S. Ruffenach's co-authors include O. Briot, K. Lorenz, E. Alves, K.P. O’Donnell, Robert Martin, M. Moret, W. Knap, S. S. Krishtopenko, F. Teppe and A. M. Kadykov and has published in prestigious journals such as Nature Communications, Applied Physics Letters and Advanced Functional Materials.

In The Last Decade

S. Ruffenach

27 papers receiving 530 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Ruffenach France 12 305 278 263 201 178 27 542
Christos Thomidis United States 15 439 1.4× 179 0.6× 246 0.9× 184 0.9× 240 1.3× 35 561
Anna Feduniewicz‐Żmuda Poland 15 410 1.3× 146 0.5× 264 1.0× 182 0.9× 142 0.8× 44 475
Hongen Shen United States 11 387 1.3× 199 0.7× 335 1.3× 339 1.7× 214 1.2× 47 650
R. Mair United States 9 266 0.9× 118 0.4× 246 0.9× 204 1.0× 113 0.6× 23 412
Tsunenori Asatsuma Japan 12 355 1.2× 154 0.6× 290 1.1× 167 0.8× 118 0.7× 27 455
Veit Hoffmann Germany 14 441 1.4× 222 0.8× 235 0.9× 273 1.4× 197 1.1× 44 585
G. Franssen Poland 15 486 1.6× 189 0.7× 312 1.2× 173 0.9× 184 1.0× 43 557
V. Bousquet United Kingdom 12 359 1.2× 226 0.8× 269 1.0× 267 1.3× 145 0.8× 35 533
O. H. Nam South Korea 10 337 1.1× 170 0.6× 142 0.5× 203 1.0× 111 0.6× 15 425
Daniel A. Haeger United States 13 502 1.6× 175 0.6× 323 1.2× 164 0.8× 159 0.9× 20 551

Countries citing papers authored by S. Ruffenach

Since Specialization
Citations

This map shows the geographic impact of S. Ruffenach's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Ruffenach with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Ruffenach more than expected).

Fields of papers citing papers by S. Ruffenach

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Ruffenach. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Ruffenach. The network helps show where S. Ruffenach may publish in the future.

Co-authorship network of co-authors of S. Ruffenach

This figure shows the co-authorship network connecting the top 25 collaborators of S. Ruffenach. A scholar is included among the top collaborators of S. Ruffenach based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Ruffenach. S. Ruffenach is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Иконников, А. В., S. S. Krishtopenko, V. Ya. Aleshkin, et al.. (2020). Effects of the Electron—Electron Interaction in the Magneto-Absorption Spectra of HgTe/CdHgTe Quantum Wells with an Inverted Band Structure. Journal of Experimental and Theoretical Physics Letters. 112(8). 508–512. 2 indexed citations
2.
Krishtopenko, S. S., S. Ruffenach, F. González‐Posada, et al.. (2018). Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well. Physical review. B.. 97(24). 20 indexed citations
3.
Desrat, W., S. S. Krishtopenko, B. A. Piot, et al.. (2018). Band splitting in Cd3As2 measured by magnetotransport. Physical review. B.. 97(24). 8 indexed citations
4.
Ruffenach, S., A. M. Kadykov, V. V. Rumyantsev, et al.. (2017). HgCdTe-based heterostructures for terahertz photonics. APL Materials. 5(3). 49 indexed citations
5.
Marcinkiewicz, Michał, S. Ruffenach, S. S. Krishtopenko, et al.. (2017). Temperature-driven single-valley Dirac fermions in HgTe quantum wells. Physical review. B.. 96(3). 38 indexed citations
6.
Teppe, F., Michał Marcinkiewicz, S. S. Krishtopenko, et al.. (2016). Temperature-driven massless Kane fermions in HgCdTe crystals. Nature Communications. 7(1). 12576–12576. 68 indexed citations
7.
Kadykov, A. M., C. Conséjo, Michał Marcinkiewicz, et al.. (2016). Observation of topological phase transition by terahertz photoconductivity in HgTe‐based transistors. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 13(7-9). 534–537. 2 indexed citations
8.
Robin, Yoann, M. Moret, S. Ruffenach, R.L. Aulombard, & O. Briot. (2014). Influence of the growth rate on the morphology of electrodeposited zinc oxide. Superlattices and Microstructures. 73. 281–289. 7 indexed citations
9.
Vries, Bart de, U. Wahl, S. Ruffenach, O. Briot, & A. Vantomme. (2013). Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities. Applied Physics Letters. 103(17). 8 indexed citations
10.
Ruffenach, S., et al.. (2011). Managing gas purity in epitaxial growth. Crystal Research and Technology. 46(8). 809–812. 5 indexed citations
11.
Ruffenach, S., et al.. (2009). Ammonia: A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy. Applied Physics Letters. 95(4). 19 indexed citations
12.
Sánchez, Ana M., J. G. Lozano, R. Garcı́a, et al.. (2007). Strain Mapping at the Atomic Scale in Highly Mismatched Heterointerfaces. Advanced Functional Materials. 17(14). 2588–2593. 9 indexed citations
13.
Lozano, J. G., Ana M. Sánchez, R. Garcı́a, et al.. (2006). Misfit relaxation of InN quantum dots: Effect of the GaN capping layer. Applied Physics Letters. 88(15). 30 indexed citations
14.
Lozano, J. G., D. González, Ana M. Sánchez, et al.. (2006). Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1687–1690. 7 indexed citations
15.
Meziani, Y. M., et al.. (2005). Terahertz investigation of high quality indium nitride epitaxial layers. physica status solidi (a). 202(4). 590–592. 6 indexed citations
16.
Martin, Robert, Emilio Nogales, K.P. O’Donnell, et al.. (2005). Optical properties of high-temperature annealed Eu-implanted GaN. Optical Materials. 28(6-7). 797–801. 5 indexed citations
17.
Briot, O., Bernard Gil, B. Maleyre, et al.. (2004). Strain‐induced correlations between the phonon frequencies of indium nitride. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 1(6). 1420–1424. 4 indexed citations
18.
Pinquier, C., F. Demangeot, J. Frandon, et al.. (2004). Raman scattering in InN films and nanostructures. Superlattices and Microstructures. 36(4-6). 581–589. 2 indexed citations
19.
Pinquier, C., F. Demangeot, J. Frandon, et al.. (2004). Raman scattering in hexagonal InN under high pressure. Physical Review B. 70(11). 30 indexed citations
20.
Coquillat, D., R. Legros, J. P. Lascaray, et al.. (2003). Giant second‐harmonic generation due to quasi‐phase matching in a one‐dimensional GaN photonic crystal. physica status solidi (b). 240(2). 455–458. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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