S. E. Hooper

1.0k total citations
52 papers, 834 citations indexed

About

S. E. Hooper is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, S. E. Hooper has authored 52 papers receiving a total of 834 indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Condensed Matter Physics, 42 papers in Atomic and Molecular Physics, and Optics and 24 papers in Electrical and Electronic Engineering. Recurrent topics in S. E. Hooper's work include GaN-based semiconductor devices and materials (44 papers), Semiconductor Quantum Structures and Devices (41 papers) and Ga2O3 and related materials (13 papers). S. E. Hooper is often cited by papers focused on GaN-based semiconductor devices and materials (44 papers), Semiconductor Quantum Structures and Devices (41 papers) and Ga2O3 and related materials (13 papers). S. E. Hooper collaborates with scholars based in United Kingdom, Russia and United States. S. E. Hooper's co-authors include John Orton, T.S. Cheng, D. E. Lacklison, C. T. Foxon, L. C. Jenkins, Jon Heffernan, C. T. Foxon, M. Kauer, С. В. Новиков and V. Bousquet and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

S. E. Hooper

52 papers receiving 820 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. E. Hooper United Kingdom 17 720 463 374 269 248 52 834
A. Sohmer Germany 11 733 1.0× 403 0.9× 182 0.5× 319 1.2× 282 1.1× 21 815
T. W. Weeks United States 12 598 0.8× 207 0.4× 324 0.9× 228 0.8× 192 0.8× 23 674
T. Hino Japan 12 706 1.0× 510 1.1× 506 1.4× 262 1.0× 400 1.6× 26 989
A. Ramakrishnan Germany 12 839 1.2× 427 0.9× 509 1.4× 458 1.7× 418 1.7× 22 1.1k
Takamichi Sumitomo Japan 5 618 0.9× 382 0.8× 278 0.7× 217 0.8× 180 0.7× 9 698
E. Haus United States 9 1.0k 1.4× 329 0.7× 415 1.1× 551 2.0× 480 1.9× 11 1.1k
Hideo Kawanishi Japan 16 608 0.8× 293 0.6× 386 1.0× 336 1.2× 285 1.1× 65 861
M. Kryśko Poland 19 790 1.1× 355 0.8× 295 0.8× 323 1.2× 316 1.3× 70 853
Takashi Kyono Japan 11 718 1.0× 480 1.0× 238 0.6× 255 0.9× 242 1.0× 19 806
Takuji Okahisa Japan 7 644 0.9× 223 0.5× 249 0.7× 335 1.2× 301 1.2× 8 686

Countries citing papers authored by S. E. Hooper

Since Specialization
Citations

This map shows the geographic impact of S. E. Hooper's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. E. Hooper with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. E. Hooper more than expected).

Fields of papers citing papers by S. E. Hooper

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. E. Hooper. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. E. Hooper. The network helps show where S. E. Hooper may publish in the future.

Co-authorship network of co-authors of S. E. Hooper

This figure shows the co-authorship network connecting the top 25 collaborators of S. E. Hooper. A scholar is included among the top collaborators of S. E. Hooper based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. E. Hooper. S. E. Hooper is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Steiner, Marc, S. Kasimir Reichmuth, Gerald Siefer, et al.. (2024). Quantifying the rear side contribution in bifacial tandem-photovoltaic devices. FreiDok plus (Universitätsbibliothek Freiburg). 1(1). 66–77. 1 indexed citations
2.
Smeeton, T. M., David W. Saxey, George David Smith, et al.. (2012). Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy. Journal of Applied Physics. 111(5). 10 indexed citations
3.
Sellers, Ian R., W. S. Tan, Kathleen N. Smith, et al.. (2011). Wide depletion width of 1 eV GaInNAs solar cells by thermal annealing. Applied Physics Letters. 99(15). 16 indexed citations
4.
Sénès, M., Delphine Lagarde, Katherine L. Smith, et al.. (2009). Electrical control of the exciton spin in nitride semiconductor quantum dots. Applied Physics Letters. 94(22). 4 indexed citations
5.
Tan, W. S., M. Kauer, S. E. Hooper, et al.. (2009). Performance and degradation characteristics of blue–violet laser diodes grown by molecular beam epitaxy. physica status solidi (a). 206(6). 1205–1210. 1 indexed citations
6.
Rossetti, Marco, T. M. Smeeton, W. S. Tan, et al.. (2008). Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings. Applied Physics Letters. 92(15). 22 indexed citations
7.
Heffernan, Jon, M. Kauer, S. E. Hooper, et al.. (2006). Characteristics of CW violet laser diodes grown by MBE. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6133. 61330O–61330O. 1 indexed citations
8.
Kauer, M., V. Bousquet, S. E. Hooper, et al.. (2006). Nitrides optoelectronic devices grown by molecular beam epitaxy. physica status solidi (a). 204(1). 221–226. 11 indexed citations
9.
Xiu, Huixin, Pedro M. F. J. Costa, M. Kauer, et al.. (2006). Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy. MRS Proceedings. 955. 2 indexed citations
10.
Hooper, S. E., M. Kauer, V. Bousquet, et al.. (2004). InGaN multiple quantum well laser diodes grown by molecular beam epitaxy. Electronics Letters. 40(1). 33–34. 32 indexed citations
11.
Bousquet, V., Jon Heffernan, Jean‐Paul Barnes, & S. E. Hooper. (2001). Effect of buffer layer preparation on GaN epilayers grown by gas-source molecular-beam epitaxy. Applied Physics Letters. 78(6). 754–756. 6 indexed citations
12.
Foxon, C. T., S. E. Hooper, T.S. Cheng, et al.. (1998). Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux. Semiconductor Science and Technology. 13(12). 1469–1471. 11 indexed citations
13.
Andrianov, A. V., et al.. (1996). Low-temperature luminescence study of GaN films grown by MBE. Semiconductor Science and Technology. 11(3). 366–371. 36 indexed citations
14.
Ber, B. Ya., A. Merkulov, С. В. Новиков, et al.. (1996). Implantation of As in GaN epitaxial layers during molecular-beam epitaxy. Semiconductors. 30(3). 293–296. 1 indexed citations
15.
Cheng, T.S., C. T. Foxon, L. C. Jenkins, et al.. (1996). Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy. Journal of Crystal Growth. 158(4). 399–402. 6 indexed citations
16.
Foxon, C. T., T.S. Cheng, С. В. Новиков, et al.. (1995). The growth and properties of group III nitrides. Journal of Crystal Growth. 150. 892–896. 60 indexed citations
17.
Orton, John, D. E. Lacklison, C. T. Foxon, et al.. (1995). The growth and properties of mixed group V nitrides. Journal of Electronic Materials. 24(4). 263–268. 26 indexed citations
18.
Новиков, С. В., C. T. Foxon, T.S. Cheng, et al.. (1995). Auger investigation of group III nitride films grown by molecular beam epitaxy. Journal of Crystal Growth. 146(1-4). 340–343. 13 indexed citations
19.
Huang, Xuanqi, T.S. Cheng, S. E. Hooper, et al.. (1995). Electrical characterization of single barrier GaAs/GaN/GaAs heterostructures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(4). 1582–1584. 6 indexed citations
20.
Hooper, S. E., D.I. Westwood, D. A. Woolf, & R. H. Williams. (1993). The molecular beam epitaxial growth of InAs on GaAs(111)B and (100) oriented substrates; a comparative growth study. Journal of Crystal Growth. 127(1-4). 918–921. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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