Takashi Onaya

483 citations

33 papers · 385 indexed · h-index 12

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 23
- Ferroelectric and Negative Capacitance Devices 22
- Thin-Film Transistor Technologies 7
- Silicon Carbide Semiconductor Technologies 3
Materials Chemistry
- MXene and MAX Phase Materials 14
- Ferroelectric and Piezoelectric Materials 4
- ZnO doping and properties 4
Electronic, Optical and Magnetic Materials
Polymers and Plastics
Surfaces, Coatings and Films
Condensed Matter Physics
- GaN-based semiconductor devices and materials 3

Co-authors: Toshihide Nabatame Atsushi Ogura Akihiko Ohi Naomi Sawamoto Naoki Ikeda Takahiro Nagata Toyohiro Chikyow Yong Chan Jung
Cited by: Electrical and Electronic Engineering Materials Chemistry Electronic, Optical and Magnetic Materials
Journals: Applied Physics Letters (2 papers)Thin Solid Films (1 paper)Japanese Journal of Applied Physics (3 papers)
Partner nations: Japan United States United Kingdom

In The Last Decade

Takashi Onaya

27 papers receiving 380 citations

Peers

Countries citing papers authored by Takashi Onaya

Since Specialization

Citations

This map shows the geographic impact of Takashi Onaya's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Takashi Onaya with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Takashi Onaya more than expected).

Fields of papers citing papers by Takashi Onaya

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Takashi Onaya. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Takashi Onaya. The network helps show where Takashi Onaya may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Takashi Onaya, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Takashi Onaya Line = papers co-authored together Takashi Onaya links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Detection of defects with carbon–carbon single-bonds in near-surface region of SiC induced by low-oxygen-partial-pressure annealing by using FTIR Applied Physics Express ·Chuyang Lyu,Takashi Onaya,Koji Kita	2025	0
2	(Invited) Role of Oxidant Gas for Atomic Layer Deposition of Hf_xZr_1−XO₂ Thin Films on Ferroelectricity of Metal-Ferroelectric-Metal Capacitors ECS Transactions ·Takashi Onaya,Koji Kita	2024	1
3	Development of ferroelectricity with crystallographic phase transformation in Hf_0.5Zr_0.5O₂ thin films upon initial stimulation of an electric field exceeding the coercive field Japanese Journal of Applied Physics ·Yukinori Morita,Takashi Onaya,Shutaro Asanuma,Hiroyuki Ota,Shinji Migita	2024	0
4	Toward Low-Thermal-Budget Hafnia-Based Ferroelectrics via Atomic Layer Deposition ACS Applied Electronic Materials ·Jin-Hyun Kim,(unknown),Takashi Onaya,Hye Ryeon Park,Yong Chan Jung,Dan N. Le,Minjong Lee,Heber Hernandez‐Arriaga,Yugang Zhang,Esther H. R. Tsai,Chang‐Yong Nam,Toshihide Nabatame,Si Joon Kim,(unknown),(unknown)	2023	15
5	Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1−xO2 thin films Solid-State Electronics ·Takashi Onaya,Toshihide Nabatame,Takahiro Nagata,Kazuhito Tsukagoshi,Jiyoung Kim,Chang‐Yong Nam,Esther H. R. Tsai,Koji Kita	2023	1
6	Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C) APL Materials ·Takashi Onaya,Toshihide Nabatame,Mari Inoue,Tomomi Sawada,Hiroyuki Ota,Yukinori Morita	2022	29
7	Comparison of characteristics of thin-film transistor with In ₂ O ₃ and carbon-doped In ₂ O ₃ channels by atomic layer deposition and post-metallization annealing in O ₃ Japanese Journal of Applied Physics ·Riku Kobayashi,Toshihide Nabatame,Takashi Onaya,Akihiko Ohi,Naoki Ikeda,Takahiro Nagata,Kazuhito Tsukagoshi,Atsushi Ogura	2021	11
8	Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress Japanese Journal of Applied Physics ·Riku Kobayashi,Toshihide Nabatame,Takashi Onaya,Akihiko Ohi,Naoki Ikeda,Takahiro Nagata,Kazuhito Tsukagoshi,Atsushi Ogura	2021	2
9	Study of SiO₂ Interfacial Layer Growth during Fabrication Process of Ferroelectric Hf_xZr_1−XO₂-Based Metal-Ferroelectric Semiconductor ECS Transactions ·Takashi Onaya,Toshihide Nabatame,Mari Inoue,Tomomi Sawada,Hiroyuki Ota,Yukinori Morita	2021	5
10	(Invited) Study of HfO₂-Based High-k Gate Insulators for GaN Power Device ECS Transactions ·Toshihide Nabatame,Erika Maeda,Mari Inoue,Masafumi Hirose,Ryota Ochi,Tomomi Sawada,Yoshihiro Irokawa,Tamotsu Hashizume,Koji Shiozaki,Takashi Onaya,Kazuhito Tsukagoshi,Yasuo Koide	2021	0
11	Importance of Annealing Step on Dielectric Constant of ZrO₂ Layer of MIM Capacitors with Al₂O₃/ZrO₂ and ZrO₂/Al₂O₃ Stack Structures ECS Transactions ·Tomomi Sawada,Toshihide Nabatame,Takashi Onaya,Mari Inoue,Akihiko Ohi,Naoki Ikeda,Kazuhito Tsukagoshi	2021	1
12	Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1−xO2 thin films using synchrotron x-ray analysis APL Materials ·Takashi Onaya,Toshihide Nabatame,Yong Chan Jung,Heber Hernandez‐Arriaga,Jaidah Mohan,Harrison Sejoon Kim,Naomi Sawamoto,Chang‐Yong Nam,Esther H. R. Tsai,Takahiro Nagata,Jiyoung Kim,Atsushi Ogura	2021	19
13	Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1−xO2/ZrO2 bilayer by atomic layer deposition Applied Physics Letters ·Takashi Onaya,Toshihide Nabatame,Mari Inoue,Yong Chan Jung,Heber Hernandez‐Arriaga,Jaidah Mohan,Harrison Sejoon Kim,Naomi Sawamoto,Takahiro Nagata,Jiyoung Kim,Atsushi Ogura	2020	27
14	Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al₂O₃ Passivation Layer under Negative and Positive Gate-Bias Stress Kazunori Kurishima,Toshihide Nabatame,Takashi Onaya,Kazuhito Tsukagoshi,Akihiko Ohi,Naoki Ikeda,Takahiro Nagata,Atsushi Ogura	2019	1
15	Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers APL Materials ·Takashi Onaya,Toshihide Nabatame,Naomi Sawamoto,Akihiko Ohi,Naoki Ikeda,(unknown),Atsushi Ogura	2019	2
16	Characteristics of Oxide TFT Using Carbon-Doped Ιn₂O₃ Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H₂O & O₃ ECS Transactions ·Riku Kobayashi,Toshihide Nabatame,Kazunori Kurishima,Takashi Onaya,Akihiko Ohi,Naoki Ikeda,Takahiro Nagata,Kazuhito Tsukagoshi,Atsushi Ogura	2019	13
17	Improved leakage current properties of ZrO2/(Ta/Nb)Ox-Al2O3/ZrO2 nanolaminate insulating stacks for dynamic random access memory capacitors Thin Solid Films ·Takashi Onaya,Toshihide Nabatame,Tomomi Sawada,Kazunori Kurishima,Naomi Sawamoto,Akihiko Ohi,Toyohiro Chikyow,Atsushi Ogura	2018	19
18	Reliability of Al₂O₃/In-Si-O-C Thin-Film Transistors with an Al₂O₃ Passivation Layer under Gate-Bias Stress ECS Transactions ·Kazunori Kurishima,Toshihide Nabatame,Takashi Onaya,Kazuhito Tsukagoshi,Akihiko Ohi,Naoki Ikeda,Takahiro Nagata,Atsushi Ogura	2018	4
19	Ferroelectricity of Hf_xZr_1−xO₂ Thin Films Fabricated Using TiN Stressor and ZrO₂ Nucleation Techniques ECS Transactions ·Takashi Onaya,Toshihide Nabatame,Naomi Sawamoto,Kazunori Kurishima,Akihiko Ohi,Naoki Ikeda,Takahiro Nagata,Atsushi Ogura	2018	9
20	Improvement in ferroelectricity of Hf_xZr₁₋_xO₂thin films using ZrO₂seed layer Applied Physics Express ·Takashi Onaya,Toshihide Nabatame,Naomi Sawamoto,Akihiko Ohi,Naoki Ikeda,Toyohiro Chikyow,Atsushi Ogura	2017	84

About Takashi Onaya

Takashi Onaya is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics, having authored 33 papers that have together received 385 indexed citations. Recurring topics across this work include Semiconductor materials and devices (23 papers), Ferroelectric and Negative Capacitance Devices (22 papers), MXene and MAX Phase Materials (14 papers), Thin-Film Transistor Technologies (7 papers), Ferroelectric and Piezoelectric Materials (4 papers), ZnO doping and properties (4 papers), Silicon Carbide Semiconductor Technologies (3 papers) and GaN-based semiconductor devices and materials (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (382 citations), Materials Chemistry (293 citations) and Electronic, Optical and Magnetic Materials (12 citations). Takashi Onaya has collaborated with scholars based in Japan, United States and United Kingdom. Frequent co-authors include Toshihide Nabatame, Atsushi Ogura, Akihiko Ohi, Naomi Sawamoto, Naoki Ikeda, Takahiro Nagata, Toyohiro Chikyow, Yong Chan Jung, Jiyoung Kim and Jaidah Mohan. Their work appears in journals such as Applied Physics Letters, Thin Solid Films and Japanese Journal of Applied Physics.

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