Jaidah Mohan

1.3k total citations
28 papers, 1.1k citations indexed

About

Jaidah Mohan is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, Jaidah Mohan has authored 28 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 23 papers in Materials Chemistry and 2 papers in Mechanics of Materials. Recurrent topics in Jaidah Mohan's work include Ferroelectric and Negative Capacitance Devices (23 papers), MXene and MAX Phase Materials (19 papers) and Semiconductor materials and devices (15 papers). Jaidah Mohan is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (23 papers), MXene and MAX Phase Materials (19 papers) and Semiconductor materials and devices (15 papers). Jaidah Mohan collaborates with scholars based in United States, South Korea and Japan. Jaidah Mohan's co-authors include Jiyoung Kim, Si Joon Kim, Scott R. Summerfelt, Luigi Colombo, Chadwin D. Young, Tamer San, Jaebeom Lee, Joy S. Lee, Antonio T. Lucero and Harrison Sejoon Kim and has published in prestigious journals such as Applied Physics Letters, ACS Applied Materials & Interfaces and Materials.

In The Last Decade

Jaidah Mohan

27 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jaidah Mohan United States 14 1.1k 880 42 24 19 28 1.1k
Monica Materano Germany 24 1.6k 1.5× 1.2k 1.4× 57 1.4× 23 1.0× 18 0.9× 35 1.6k
Ralf van Bentum Germany 9 1.1k 1.1× 689 0.8× 37 0.9× 21 0.9× 14 0.7× 14 1.2k
Christopher Künneth Germany 9 760 0.7× 643 0.7× 44 1.0× 33 1.4× 12 0.6× 13 812
Zhaomeng Gao China 11 496 0.5× 410 0.5× 37 0.9× 54 2.3× 11 0.6× 31 557
Clemens Mart Germany 18 802 0.8× 649 0.7× 62 1.5× 28 1.2× 11 0.6× 38 838
Yong Bin Lee South Korea 15 754 0.7× 638 0.7× 113 2.7× 28 1.2× 45 2.4× 26 824
Ava J. Tan United States 16 955 0.9× 521 0.6× 32 0.8× 10 0.4× 3 0.2× 20 973
Mart Salverda Netherlands 5 428 0.4× 410 0.5× 26 0.6× 56 2.3× 7 0.4× 8 504
Harrison Sejoon Kim United States 12 393 0.4× 328 0.4× 26 0.6× 19 0.8× 34 1.8× 30 424
Youngin Goh South Korea 18 1.2k 1.2× 757 0.9× 70 1.7× 31 1.3× 8 0.4× 30 1.3k

Countries citing papers authored by Jaidah Mohan

Since Specialization
Citations

This map shows the geographic impact of Jaidah Mohan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jaidah Mohan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jaidah Mohan more than expected).

Fields of papers citing papers by Jaidah Mohan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jaidah Mohan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jaidah Mohan. The network helps show where Jaidah Mohan may publish in the future.

Co-authorship network of co-authors of Jaidah Mohan

This figure shows the co-authorship network connecting the top 25 collaborators of Jaidah Mohan. A scholar is included among the top collaborators of Jaidah Mohan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jaidah Mohan. Jaidah Mohan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jung, Yong Chan, Jin-Hyun Kim, Jaidah Mohan, et al.. (2024). Analysis of ferroelectric properties of ALD-Hf0.5Zr0.5O2 thin films according to oxygen sources. Solid-State Electronics. 216. 108911–108911. 2 indexed citations
2.
Jung, Yong Chan, Jin-Hyun Kim, Jaidah Mohan, et al.. (2022). Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant. Applied Physics Letters. 121(22). 11 indexed citations
3.
Mohan, Jaidah, Yong Chan Jung, Jin-Hyun Kim, et al.. (2022). Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitors. ACS Applied Electronic Materials. 4(4). 1405–1414. 9 indexed citations
4.
Kim, Harrison Sejoon, Jaidah Mohan, Yong Chan Jung, et al.. (2021). Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors. AIP Advances. 11(11). 2 indexed citations
5.
Kim, Harrison Sejoon, Jaidah Mohan, Yong Chan Jung, et al.. (2021). Highly Reliable Selection Behavior With Controlled Ag Doping of Nano-Polycrystalline ZnO Layer for 3D X-Point Framework. IEEE Electron Device Letters. 43(1). 21–24. 2 indexed citations
6.
Kim, Si Joon, Yong Chan Jung, Jaidah Mohan, et al.. (2021). Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing. Applied Physics Letters. 119(24). 28 indexed citations
7.
Jung, Yong Chan, Jaidah Mohan, Su Min Hwang, et al.. (2021). A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition. physica status solidi (RRL) - Rapid Research Letters. 15(5). 5 indexed citations
8.
Sudha, J., et al.. (2021). Low velocity impact and axial loading response of hybrid fibre aluminium laminates. Journal of Mechanical Science and Technology. 35(11). 4925–4930. 2 indexed citations
9.
Kim, Hyojeong, Yong Chan Jung, Jaidah Mohan, et al.. (2021). Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications. physica status solidi (RRL) - Rapid Research Letters. 15(5). 6 indexed citations
10.
Onaya, Takashi, Toshihide Nabatame, Yong Chan Jung, et al.. (2021). Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1−xO2 thin films using synchrotron x-ray analysis. APL Materials. 9(3). 19 indexed citations
11.
Kim, Harrison Sejoon, Jaidah Mohan, Antonio T. Lucero, et al.. (2021). Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for an X-Point Selector. ACS Applied Electronic Materials. 3(5). 2309–2316. 12 indexed citations
12.
Jung, Yong Chan, Su Min Hwang, Jaidah Mohan, et al.. (2020). Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source. Materials. 13(15). 3387–3387. 13 indexed citations
13.
Kim, Si Joon, Jaidah Mohan, Harrison Sejoon Kim, et al.. (2020). A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films. Materials. 13(13). 2968–2968. 36 indexed citations
14.
Lee, Jaebeom, Jaidah Mohan, Lanxia Cheng, et al.. (2020). Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics. ACS Applied Materials & Interfaces. 12(32). 36688–36694. 31 indexed citations
15.
Onaya, Takashi, Toshihide Nabatame, Yong Chan Jung, et al.. (2020). Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1−xO2/ZrO2 bilayer by atomic layer deposition. Applied Physics Letters. 117(23). 27 indexed citations
16.
Kim, Si Joon, Jaidah Mohan, Joy S. Lee, et al.. (2019). Stress-Induced Crystallization of Thin Hf1–XZrXO2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic Energy Storage Applications. ACS Applied Materials & Interfaces. 11(5). 5208–5214. 31 indexed citations
17.
Kim, Si Joon, Jaidah Mohan, Chadwin D. Young, et al.. (2018). Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors with Low-Voltage Operation and High Reliability for Next-Generation FRAM Applications. 1–4. 28 indexed citations
18.
Kim, Si Joon, Jaidah Mohan, Jaebeom Lee, et al.. (2018). Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films. Applied Physics Letters. 112(17). 139 indexed citations
19.
Kim, Si Joon, Jaidah Mohan, Harrison Sejoon Kim, et al.. (2018). Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors. Applied Physics Letters. 113(18). 73 indexed citations
20.
Kim, Si Joon, Dushyant Narayan, Jae‐Gil Lee, et al.. (2017). Low Temperature (400°c) Ferroelectric Hf0.5Zr0.5O2 Capacitors for Next-Generation FRAM Applications. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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