Hui Yang

8.5k total citations
359 papers, 6.8k citations indexed

About

Hui Yang is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, Hui Yang has authored 359 papers receiving a total of 6.8k indexed citations (citations by other indexed papers that have themselves been cited), including 271 papers in Condensed Matter Physics, 151 papers in Atomic and Molecular Physics, and Optics and 134 papers in Electrical and Electronic Engineering. Recurrent topics in Hui Yang's work include GaN-based semiconductor devices and materials (270 papers), Semiconductor Quantum Structures and Devices (128 papers) and Ga2O3 and related materials (123 papers). Hui Yang is often cited by papers focused on GaN-based semiconductor devices and materials (270 papers), Semiconductor Quantum Structures and Devices (128 papers) and Ga2O3 and related materials (123 papers). Hui Yang collaborates with scholars based in China, Germany and Switzerland. Hui Yang's co-authors include Martin A. M. Gijs, O. Brandt, Degang Zhao, K. H. Ploog, Qian Sun, Meixin Feng, Liqun Zhang, Yu Zhou, Shijie Xu and Masao Ikeda and has published in prestigious journals such as Journal of the American Chemical Society, Chemical Society Reviews and Nano Letters.

In The Last Decade

Hui Yang

340 papers receiving 6.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hui Yang China 42 4.4k 2.9k 2.3k 2.3k 2.2k 359 6.8k
Yong‐Hoon Cho South Korea 36 1.9k 0.4× 1.7k 0.6× 1.5k 0.7× 1.3k 0.6× 2.6k 1.2× 224 5.2k
Harri Lipsanen Finland 43 1.1k 0.3× 5.2k 1.8× 3.8k 1.6× 884 0.4× 3.9k 1.8× 392 8.3k
Rong Zhang China 42 2.6k 0.6× 3.8k 1.3× 1.5k 0.7× 3.1k 1.3× 5.0k 2.3× 539 8.3k
Albert V. Davydov United States 46 1.3k 0.3× 3.8k 1.3× 1.3k 0.6× 1.3k 0.5× 4.0k 1.9× 235 7.3k
Yukio Narukawa Japan 35 5.1k 1.2× 2.0k 0.7× 2.7k 1.2× 2.6k 1.1× 3.2k 1.5× 81 7.1k
Junxi Wang China 36 3.1k 0.7× 2.5k 0.9× 1.4k 0.6× 2.2k 0.9× 3.1k 1.4× 404 6.2k
Gyu‐Chul Yi South Korea 53 2.5k 0.6× 5.1k 1.8× 990 0.4× 4.5k 2.0× 9.2k 4.3× 238 11.4k
Rachel A. Oliver United Kingdom 43 4.1k 0.9× 2.7k 0.9× 2.4k 1.0× 1.8k 0.8× 2.8k 1.3× 356 6.5k
Edward T. Yu United States 53 2.8k 0.6× 6.7k 2.3× 3.2k 1.4× 2.4k 1.0× 4.3k 2.0× 258 10.8k
Nelson Tansu United States 48 5.0k 1.1× 3.2k 1.1× 3.6k 1.5× 2.0k 0.9× 2.8k 1.3× 224 7.5k

Countries citing papers authored by Hui Yang

Since Specialization
Citations

This map shows the geographic impact of Hui Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hui Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hui Yang more than expected).

Fields of papers citing papers by Hui Yang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hui Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hui Yang. The network helps show where Hui Yang may publish in the future.

Co-authorship network of co-authors of Hui Yang

This figure shows the co-authorship network connecting the top 25 collaborators of Hui Yang. A scholar is included among the top collaborators of Hui Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hui Yang. Hui Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhou, Yu, Yaozong Zhong, Jianxun Liu, et al.. (2024). Degradation mechanism of degenerate n-GaN ohmic contact induced by ion beam etching damage. Applied Physics Express. 17(9). 96501–96501.
2.
Gao, Hongwei, Xin Chen, Yaozong Zhong, et al.. (2024). Enhanced Gate Reliability of Ohmic-Like p-GaN Gate HEMT With a Built-in Reverse Diode. IEEE Transactions on Electron Devices. 71(4). 2355–2360. 3 indexed citations
3.
Tian, Aiqin, et al.. (2023). Key role of initial interface on contact characteristics of Pd/p-GaN. Vacuum. 220. 112766–112766. 2 indexed citations
4.
Li, Fangzhi, Jianping Liu, Aiqin Tian, et al.. (2023). Study on carrier transport in InGaN upper waveguide layer of GaN-based blue laser diodes. Japanese Journal of Applied Physics. 62(6). 65501–65501.
5.
Feng, Meixin, Yaozong Zhong, Xin Chen, et al.. (2023). Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors. ACS Photonics. 11(1). 180–186. 20 indexed citations
6.
Feng, Meixin, Jianxun Liu, Xiujian Sun, et al.. (2023). Performance improvement of GaN-based microdisk lasers by using a PEALD-SiO2 passivation layer. Optics Express. 31(12). 20212–20212. 7 indexed citations
7.
Zhan, Xiaoning, Jianxun Liu, Xiujian Sun, et al.. (2022). Crack-free 2.2 μm-thick GaN grown on Si with a single-layer AlN buffer for RF device applications. Journal of Physics D Applied Physics. 56(1). 15104–15104. 5 indexed citations
8.
Fan, Shizhao, Rong Liu, Yingnan Huang, et al.. (2022). Observation of threading dislocations and misfit dislocation half-loops in GaN/AlGaN heterostructures grown on Si using electron channeling contrast imaging. Journal of Applied Physics. 132(10). 7 indexed citations
9.
Liu, Jianxun, Qian Li, Qian Sun, et al.. (2022). Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD. Applied Physics Letters. 121(21). 13 indexed citations
10.
Yang, Liangtao, Lu Gan, Zhenggang Zhang, et al.. (2022). Insight into the Contact Impedance between the Electrode and the Skin Surface for Electrophysical Recordings. ACS Omega. 7(16). 13906–13912. 39 indexed citations
11.
Liu, Jianxun, Yu Zhou, Xiujian Sun, et al.. (2022). Improved minority carrier lifetime in p-type GaN by suppressing the non-radiative recombination process. Applied Physics Express. 15(7). 75501–75501. 5 indexed citations
12.
Guo, Xiaolu, Yaozong Zhong, Yu Zhou, et al.. (2021). Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm2. IEEE Transactions on Electron Devices. 68(11). 5682–5686. 29 indexed citations
13.
Feng, Meixin, Shizhao Fan, Yongjun Tang, et al.. (2021). Activation of buried p-GaN through nanopipes in large-size GaN-based tunnel junction LEDs. Nanotechnology. 32(30). 30LT01–30LT01. 4 indexed citations
14.
Wang, Jin, Meixin Feng, Rui Zhou, et al.. (2020). Continuous-wave electrically injected GaN-on-Si microdisk laser diodes. Optics Express. 28(8). 12201–12201. 22 indexed citations
15.
Tang, Yongjun, Meixin Feng, Pengyan Wen, et al.. (2020). Degradation study of InGaN-based laser diodes grown on Si. Journal of Physics D Applied Physics. 53(39). 395103–395103. 5 indexed citations
16.
Ding, Jie, Xiaohong Chen, Tao Zhang, et al.. (2020). Interdigital Structure Enhanced the Current Spreading and Light Output Power of GaN-Based Light Emitting Diodes. IEEE Access. 8. 105972–105979. 1 indexed citations
17.
Ikeda, Masao, Feng Zhang, Jianping Liu, et al.. (2019). Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence. Japanese Journal of Applied Physics. 58(SC). SCCB07–SCCB07. 10 indexed citations
18.
Wang, Jin, Meixin Feng, Rui Zhou, et al.. (2019). The abnormal aging phenomena in GaN-based near-ultraviolet laser diodes. Journal of Physics D Applied Physics. 52(27). 275104–275104. 2 indexed citations
19.
Zhang, Shuming, Feng Zhang, Junjie Hu, et al.. (2019). Realization of GaN-based gain-guided blue laser diodes by helium ion implantation. Semiconductor Science and Technology. 34(11). 115007–115007. 2 indexed citations
20.
Zhao, Desheng, Desheng Jiang, Ping Chen, et al.. (2016). The effectiveness of electron blocking layer in InGaN‐based laser diodes with different indium content. physica status solidi (a). 213(8). 2223–2228. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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