Hongwei Gao

3.0k total citations
129 papers, 2.1k citations indexed

About

Hongwei Gao is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Hongwei Gao has authored 129 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 87 papers in Electrical and Electronic Engineering, 52 papers in Atomic and Molecular Physics, and Optics and 42 papers in Condensed Matter Physics. Recurrent topics in Hongwei Gao's work include GaN-based semiconductor devices and materials (42 papers), Solid State Laser Technologies (31 papers) and Photonic and Optical Devices (27 papers). Hongwei Gao is often cited by papers focused on GaN-based semiconductor devices and materials (42 papers), Solid State Laser Technologies (31 papers) and Photonic and Optical Devices (27 papers). Hongwei Gao collaborates with scholars based in China, Singapore and United States. Hongwei Gao's co-authors include Qian Sun, Yu Zhou, Hui Yang, Wei Sun, Kui Jiao, Yaozong Zhong, Meixin Feng, Jianxun Liu, Dawn T. H. Tan and Guicun Li and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Hongwei Gao

121 papers receiving 2.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hongwei Gao China 26 1.2k 912 573 520 342 129 2.1k
Peter J. Yunker United States 22 1.4k 1.1× 435 0.5× 378 0.7× 454 0.9× 1.1k 3.2× 58 3.6k
Thomas Pfohl Germany 33 710 0.6× 266 0.3× 345 0.6× 266 0.5× 1.7k 5.1× 100 3.8k
M. A. Cotta Brazil 28 782 0.6× 173 0.2× 739 1.3× 130 0.3× 816 2.4× 137 2.5k
Tomohiro Koyama Japan 28 534 0.4× 586 0.6× 1.5k 2.6× 755 1.5× 133 0.4× 133 2.5k
Alexander J. Pak United States 26 795 0.6× 124 0.1× 139 0.2× 755 1.5× 225 0.7× 44 2.2k
Stéphane Evoy Canada 31 1.3k 1.0× 193 0.2× 1.1k 2.0× 171 0.3× 2.2k 6.5× 93 4.4k
Martin O. Jones United Kingdom 31 1.2k 0.9× 307 0.3× 199 0.3× 347 0.7× 216 0.6× 90 4.6k
Chris Webb United States 22 468 0.4× 219 0.2× 423 0.7× 182 0.3× 589 1.7× 61 2.9k
Banahalli R. Ratna United States 34 1.3k 1.0× 173 0.2× 495 0.9× 1.5k 2.9× 1.5k 4.4× 119 5.0k

Countries citing papers authored by Hongwei Gao

Since Specialization
Citations

This map shows the geographic impact of Hongwei Gao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hongwei Gao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hongwei Gao more than expected).

Fields of papers citing papers by Hongwei Gao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hongwei Gao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hongwei Gao. The network helps show where Hongwei Gao may publish in the future.

Co-authorship network of co-authors of Hongwei Gao

This figure shows the co-authorship network connecting the top 25 collaborators of Hongwei Gao. A scholar is included among the top collaborators of Hongwei Gao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hongwei Gao. Hongwei Gao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Choi, Ju Won, Byoung‐Uk Sohn, George F. R. Chen, et al.. (2025). Disorder robust, ultra‐low power, continuous‐wave four‐wave mixing in a topological waveguide. Nanophotonics. 14(9). 1333–1344.
2.
Li, Fangqing, Xin Chen, Yaozong Zhong, et al.. (2024). A Novel GaN Gate Driver: Transistor-Intrinsic Integration Exploiting Non-Ideal Characteristics by Device-Circuit Co-Design. 1–4. 1 indexed citations
3.
Gao, Hongwei, Xin Chen, Yaozong Zhong, et al.. (2024). Enhanced Gate Reliability of Ohmic-Like p-GaN Gate HEMT With a Built-in Reverse Diode. IEEE Transactions on Electron Devices. 71(4). 2355–2360. 3 indexed citations
4.
Choi, Ju Won, Byoung‐Uk Sohn, Hongwei Gao, et al.. (2024). Observation of temporal optical solitons in a topological waveguide. Scientific Reports. 14(1). 28074–28074.
5.
Shen, Yu, Erpeng Wang, Jiyong Yao, et al.. (2023). A Stable and Compact Mid-IR at 6.45 μm Exceeding 6 mJ of Pulse Energy BaGa4Se7 Optical Parametric Oscillator. Applied Sciences. 13(11). 6413–6413. 5 indexed citations
6.
Sun, Xiujian, Jianxun Liu, Yingnan Huang, et al.. (2023). Improved external quantum efficiency of deep UV LEDs with an ultra-thin AlGaN last quantum barrier by controlling the desorption-kinetics process. Applied Physics Express. 16(11). 111004–111004. 1 indexed citations
7.
Feng, Meixin, Yaozong Zhong, Xin Chen, et al.. (2023). Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors. ACS Photonics. 11(1). 180–186. 20 indexed citations
8.
Liu, Jianxun, Qian Li, Qian Sun, et al.. (2022). Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD. Applied Physics Letters. 121(21). 13 indexed citations
9.
Zhan, Xiaoning, Jianxun Liu, Xiujian Sun, et al.. (2022). Crack-free 2.2 μm-thick GaN grown on Si with a single-layer AlN buffer for RF device applications. Journal of Physics D Applied Physics. 56(1). 15104–15104. 5 indexed citations
10.
Guo, Xiaolu, Yaozong Zhong, Junlei He, et al.. (2021). High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination. IEEE Electron Device Letters. 42(4). 473–476. 49 indexed citations
11.
Huang, Sen, Xinhua Wang, Xinyu Liu, et al.. (2019). Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates. Applied Physics Express. 12(2). 24001–24001. 25 indexed citations
12.
Liu, Jianxun, Jin Wang, Xiujian Sun, et al.. (2019). InGaN-Based Quantum Well Superluminescent Diode Monolithically Grown on Si. ACS Photonics. 6(8). 2104–2109. 11 indexed citations
13.
Wang, Jin, Meixin Feng, Rui Zhou, et al.. (2019). The abnormal aging phenomena in GaN-based near-ultraviolet laser diodes. Journal of Physics D Applied Physics. 52(27). 275104–275104. 2 indexed citations
14.
Feng, Meixin, Jin Wang, Rui Zhou, et al.. (2019). Fabrication of AlGaN nanostructures by nanolithography on ultraviolet LEDs grown on Si substrates. Nanotechnology. 30(18). 185201–185201. 5 indexed citations
15.
Zhong, Yaozong, Qian Sun, Hui Yang, et al.. (2019). Normally-off HEMTs With Regrown p-GaN Gate and Low-Pressure Chemical Vapor Deposition SiNx Passivation by Using an AlN Pre-Layer. IEEE Electron Device Letters. 40(9). 1495–1498. 57 indexed citations
16.
Liu, Jianxun, Jin Wang, Xiujian Sun, et al.. (2019). Performance improvement of InGaN-based laser grown on Si by suppressing point defects. Optics Express. 27(18). 25943–25943. 10 indexed citations
17.
Huang, Yingnan, Jianxun Liu, Xiujian Sun, et al.. (2019). Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer. CrystEngComm. 22(7). 1160–1165. 15 indexed citations
18.
Liu, Jianxun, Yingnan Huang, Xiujian Sun, et al.. (2019). Wafer-scale crack-free 10 µ m-thick GaN with a dislocation density of 5.8  ×  10 7 cm −2 grown on Si. Journal of Physics D Applied Physics. 52(42). 425102–425102. 23 indexed citations
19.
Wei, Feng, Limin Shang, Hongtao Jin, et al.. (2011). Molecular Detection and Genetic Diversity of Leishmania donovani in Naturally Infected Phlebotomus chinensi from Southwestern China. Vector-Borne and Zoonotic Diseases. 11(7). 849–852. 11 indexed citations
20.
Gao, Hongwei, et al.. (1995). Immunosensing with photo-immobilized immunoreagents on planar optical wave guides. Biosensors and Bioelectronics. 10(3-4). 317–328. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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