Yu Zhou

2.1k total citations
129 papers, 1.7k citations indexed

About

Yu Zhou is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Yu Zhou has authored 129 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 79 papers in Electrical and Electronic Engineering, 54 papers in Condensed Matter Physics and 48 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Yu Zhou's work include GaN-based semiconductor devices and materials (54 papers), Ga2O3 and related materials (32 papers) and Photonic and Optical Devices (23 papers). Yu Zhou is often cited by papers focused on GaN-based semiconductor devices and materials (54 papers), Ga2O3 and related materials (32 papers) and Photonic and Optical Devices (23 papers). Yu Zhou collaborates with scholars based in China, United States and Germany. Yu Zhou's co-authors include Qian Sun, Hui Yang, Hongwei Gao, Meixin Feng, Masao Ikeda, Yaozong Zhong, Jianxun Liu, Zengcheng Li, Junlei He and Liqun Zhang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Nature Photonics.

In The Last Decade

Yu Zhou

120 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yu Zhou China 22 1.1k 1.0k 590 557 331 129 1.7k
Nandita DasGupta India 23 740 0.7× 1.3k 1.3× 360 0.6× 352 0.6× 382 1.2× 124 2.0k
Francis J. Kub United States 22 997 0.9× 1.2k 1.1× 543 0.9× 244 0.4× 429 1.3× 118 1.7k
Jing Lu United States 22 1.1k 1.0× 1.1k 1.0× 625 1.1× 411 0.7× 471 1.4× 73 1.7k
Sébastien Chenot France 25 1.3k 1.1× 911 0.9× 1.3k 2.2× 855 1.5× 483 1.5× 107 2.4k
Naoki Matsumoto Japan 15 532 0.5× 391 0.4× 313 0.5× 253 0.5× 313 0.9× 80 1.1k
S. Vézian France 23 665 0.6× 595 0.6× 1.1k 1.9× 720 1.3× 623 1.9× 80 2.1k
Yuji Ando Japan 24 1.2k 1.1× 1.7k 1.6× 502 0.9× 762 1.4× 366 1.1× 126 2.1k
Anurag Tyagi United States 24 1.3k 1.1× 452 0.4× 396 0.7× 792 1.4× 506 1.5× 44 1.6k
Jinwook Burm South Korea 21 885 0.8× 1.0k 1.0× 353 0.6× 341 0.6× 271 0.8× 84 1.5k
Yu-Pin Lan Taiwan 27 346 0.3× 1.2k 1.2× 231 0.4× 1.5k 2.8× 325 1.0× 94 2.0k

Countries citing papers authored by Yu Zhou

Since Specialization
Citations

This map shows the geographic impact of Yu Zhou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yu Zhou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yu Zhou more than expected).

Fields of papers citing papers by Yu Zhou

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yu Zhou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yu Zhou. The network helps show where Yu Zhou may publish in the future.

Co-authorship network of co-authors of Yu Zhou

This figure shows the co-authorship network connecting the top 25 collaborators of Yu Zhou. A scholar is included among the top collaborators of Yu Zhou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yu Zhou. Yu Zhou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhou, Yu, Qian Li, Sheng Cheng, et al.. (2025). Characterization and reduction of RF loss up to 110 GHz by optimizing the UID-GaN layer in N-polar GaN material. Applied Physics Letters. 126(6). 2 indexed citations
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Zhou, Yu, Qian Li, Jianxun Liu, et al.. (2024). Impact of eliminating ungated access regions on DC and thermal performance of GaN-based MIS-HEMT. Semiconductor Science and Technology. 39(6). 65018–65018. 1 indexed citations
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Zhan, Xiaoning, Jianxun Liu, Xiujian Sun, et al.. (2022). Crack-free 2.2 μm-thick GaN grown on Si with a single-layer AlN buffer for RF device applications. Journal of Physics D Applied Physics. 56(1). 15104–15104. 5 indexed citations
8.
Liu, Jianxun, Qian Li, Qian Sun, et al.. (2022). Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD. Applied Physics Letters. 121(21). 13 indexed citations
9.
Liu, Jianxun, Yu Zhou, Xiujian Sun, et al.. (2022). Improved minority carrier lifetime in p-type GaN by suppressing the non-radiative recombination process. Applied Physics Express. 15(7). 75501–75501. 5 indexed citations
10.
Guo, Xiaolu, Yaozong Zhong, Yu Zhou, et al.. (2022). 1200-V GaN-on-Si Quasi-Vertical p-n Diodes. IEEE Electron Device Letters. 43(12). 2057–2060. 17 indexed citations
11.
Guo, Xiaolu, Yaozong Zhong, Yu Zhou, et al.. (2021). Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm2. IEEE Transactions on Electron Devices. 68(11). 5682–5686. 29 indexed citations
12.
Feng, Meixin, Shizhao Fan, Yongjun Tang, et al.. (2021). Activation of buried p-GaN through nanopipes in large-size GaN-based tunnel junction LEDs. Nanotechnology. 32(30). 30LT01–30LT01. 4 indexed citations
13.
Guo, Xiaolu, Yaozong Zhong, Junlei He, et al.. (2021). High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination. IEEE Electron Device Letters. 42(4). 473–476. 49 indexed citations
14.
Guo, Xiaolu, Yaozong Zhong, Xin Chen, et al.. (2021). Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination. Applied Physics Letters. 118(24). 44 indexed citations
15.
Wang, Jin, Meixin Feng, Rui Zhou, et al.. (2019). The abnormal aging phenomena in GaN-based near-ultraviolet laser diodes. Journal of Physics D Applied Physics. 52(27). 275104–275104. 2 indexed citations
16.
Zhong, Yaozong, Qian Sun, Hui Yang, et al.. (2019). Normally-off HEMTs With Regrown p-GaN Gate and Low-Pressure Chemical Vapor Deposition SiNx Passivation by Using an AlN Pre-Layer. IEEE Electron Device Letters. 40(9). 1495–1498. 57 indexed citations
17.
Liu, Jianxun, Yingnan Huang, Xiujian Sun, et al.. (2019). Wafer-scale crack-free 10 µ m-thick GaN with a dislocation density of 5.8  ×  10 7 cm −2 grown on Si. Journal of Physics D Applied Physics. 52(42). 425102–425102. 23 indexed citations
18.
Liu, Jianxun, Jin Wang, Xiujian Sun, et al.. (2019). InGaN-Based Quantum Well Superluminescent Diode Monolithically Grown on Si. ACS Photonics. 6(8). 2104–2109. 11 indexed citations
19.
Huang, Yingnan, Jianxun Liu, Xiujian Sun, et al.. (2019). Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer. CrystEngComm. 22(7). 1160–1165. 15 indexed citations
20.
Liu, Jianxun, Jin Wang, Xiujian Sun, et al.. (2019). Performance improvement of InGaN-based laser grown on Si by suppressing point defects. Optics Express. 27(18). 25943–25943. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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