Wangyong Chen

421 total citations
52 papers, 281 citations indexed

About

Wangyong Chen is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Wangyong Chen has authored 52 papers receiving a total of 281 indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Electrical and Electronic Engineering, 9 papers in Electronic, Optical and Magnetic Materials and 7 papers in Materials Chemistry. Recurrent topics in Wangyong Chen's work include Semiconductor materials and devices (39 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). Wangyong Chen is often cited by papers focused on Semiconductor materials and devices (39 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). Wangyong Chen collaborates with scholars based in China. Wangyong Chen's co-authors include Linlin Cai, Gang Du, Xiaoyan Liu, Xing Zhang, Jinfeng Kang, Xing Zhang, Yudi Zhao, Xiaoyan Liu, Peng Huang and Xiaoyan Liu and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

Wangyong Chen

40 papers receiving 272 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Wangyong Chen China 9 265 43 29 15 14 52 281
Chenming Hu United States 9 344 1.3× 44 1.0× 44 1.5× 10 0.7× 8 0.6× 19 381
Weiran Kong China 10 211 0.8× 37 0.9× 30 1.0× 5 0.3× 21 1.5× 30 239
Zixuan Sun China 12 325 1.2× 55 1.3× 23 0.8× 10 0.7× 5 0.4× 50 362
Tatsuya Onuki Japan 9 342 1.3× 137 3.2× 30 1.0× 19 1.3× 9 0.6× 34 355
Véronique Sousa France 8 181 0.7× 196 4.6× 37 1.3× 22 1.5× 11 0.8× 12 224
Boris Vaisband United States 11 248 0.9× 19 0.4× 14 0.5× 18 1.2× 43 3.1× 42 270
C. Perrot France 8 159 0.6× 45 1.0× 38 1.3× 18 1.2× 3 0.2× 15 188
V. Lapras France 11 319 1.2× 26 0.6× 88 3.0× 7 0.5× 17 1.2× 20 353
B. Fléchet France 10 251 0.9× 56 1.3× 32 1.1× 60 4.0× 5 0.4× 43 270
Simon Thomann Germany 10 314 1.2× 62 1.4× 11 0.4× 5 0.3× 12 0.9× 37 324

Countries citing papers authored by Wangyong Chen

Since Specialization
Citations

This map shows the geographic impact of Wangyong Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wangyong Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wangyong Chen more than expected).

Fields of papers citing papers by Wangyong Chen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wangyong Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wangyong Chen. The network helps show where Wangyong Chen may publish in the future.

Co-authorship network of co-authors of Wangyong Chen

This figure shows the co-authorship network connecting the top 25 collaborators of Wangyong Chen. A scholar is included among the top collaborators of Wangyong Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wangyong Chen. Wangyong Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chen, Wangyong, et al.. (2025). Open Model Interface Assisted NBTI-Aware Design With Dual-V th Logic Synthesis Strategy for Reliability Improvement. IEEE Transactions on Device and Materials Reliability. 25(3). 528–534.
2.
Chen, Wangyong, et al.. (2025). A physics-based electromigration model for advanced interconnects. Microelectronics Reliability. 173. 115862–115862.
3.
Chen, Wangyong, et al.. (2025). Gate sizing and buffer insertion for circuit aging and thermal resilience enhancement. Microelectronics Reliability. 166. 115604–115604.
4.
Cai, Linlin, et al.. (2024). Exploring thermal effects of advanced backside power delivery network beyond 3 nm node. Microelectronics Journal. 153. 106440–106440. 3 indexed citations
5.
Zhang, Zhengxin, Wangyong Chen, Jianwen Lin, & Linlin Cai. (2024). Single Event Upset and Radiation Hardening of the Complementary FET (CFET) based 6T-SRAM. 782–782. 1 indexed citations
6.
Chi, Yaqing, Yang Guo, Ming Tao, et al.. (2024). Gate breakdown induced stuck bits in sub-20 nm FinFET SRAM. Applied Physics Letters. 125(2). 1 indexed citations
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9.
Zhang, Zhengxin, Wangyong Chen, Jianwen Lin, & Linlin Cai. (2024). Comparative study of single event upset susceptibility in the Complementary FET (CFET) and FinFET based 6T-SRAM. Microelectronics Reliability. 164. 115552–115552.
10.
11.
Chen, Wangyong, et al.. (2023). Time-dependent statistical NBTI model for aging assessment in circuit level implemented with open model interface. Microelectronics Reliability. 151. 115254–115254. 3 indexed citations
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Chen, Wangyong, et al.. (2023). Geometry Dependent Multi-stage Compact Thermal Model for Advanced Nanosheet FETs. 433–437. 1 indexed citations
14.
Chen, Wangyong, et al.. (2019). Investigation of degradation under arbitrary bias conditions in HfO 2 based nanosheet nFETs by 3D kinetic Monte-Carlo method. Japanese Journal of Applied Physics. 58(SB). SBBA13–SBBA13.
15.
Chen, Wangyong, et al.. (2019). Investigation of PBTI Degradation in Nanosheet nFETs With HfO2 Gate Dielectric by 3D-KMC Method. IEEE Transactions on Nanotechnology. 18. 385–391. 2 indexed citations
16.
Cai, Linlin, Wangyong Chen, Yudi Zhao, et al.. (2019). A Physics-Based Analytic Model of Analog Switching Resistive Random Access Memory. IEEE Electron Device Letters. 41(2). 236–239. 7 indexed citations
17.
Cai, Linlin, Wangyong Chen, Xing Zhang, Yudi Zhao, & Xiaoyan Liu. (2019). 3D Kinetic Monte Carlo Simulation of Electromigration in Multi-layer Interconnects. 1–4. 3 indexed citations
18.
Cai, Linlin, Wangyong Chen, Gang Du, et al.. (2018). A Physics-based Thermal Model of Nanosheet MOSFETs for Device-Circuit Co-design. 33.6.1–33.6.4. 20 indexed citations
19.
Chen, Wangyong, et al.. (2018). Self-heating induced Variability and Reliability in Nanosheet-FETs Based SRAM. 1–4. 8 indexed citations
20.
Chen, Wangyong, et al.. (2017). Impact of self-heating effect on the retention of 3-D NAND flash memory. 1–4. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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