S. Kawazu

408 total citations
21 papers, 143 citations indexed

About

S. Kawazu is a scholar working on Electrical and Electronic Engineering, Surfaces, Coatings and Films and Radiation. According to data from OpenAlex, S. Kawazu has authored 21 papers receiving a total of 143 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 5 papers in Surfaces, Coatings and Films and 4 papers in Radiation. Recurrent topics in S. Kawazu's work include Semiconductor materials and devices (11 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). S. Kawazu is often cited by papers focused on Semiconductor materials and devices (11 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). S. Kawazu collaborates with scholars based in Japan, United States and Germany. S. Kawazu's co-authors include Youichi Akasaka, M. Umeno, Hidekazu Yamamoto, Masahiro Sekine, Akinobu Teramoto, Hiroshi Koyama, Hirokazu Miyoshi, Hiroshi Koyama, S. Komori and Hiroaki Morimoto and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

S. Kawazu

20 papers receiving 133 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Kawazu Japan 8 123 24 21 20 20 21 143
H.-H. Vuong United States 9 176 1.4× 49 2.0× 8 0.4× 20 1.0× 19 0.9× 22 186
T. Fukai Japan 10 316 2.6× 25 1.0× 18 0.9× 29 1.4× 21 1.1× 22 340
S. Baudot France 8 134 1.1× 35 1.5× 13 0.6× 4 0.2× 30 1.5× 24 160
F. Floreani United Kingdom 8 299 2.4× 130 5.4× 21 1.0× 20 1.0× 11 0.6× 21 331
H.-B. Schilling Germany 4 46 0.4× 20 0.8× 12 0.6× 9 0.5× 33 1.6× 8 80
P. Gouraud France 5 115 0.9× 25 1.0× 22 1.0× 14 0.7× 29 1.4× 25 148
Y. Yeh United States 7 132 1.1× 84 3.5× 7 0.3× 6 0.3× 38 1.9× 31 175
T.C. Mele United States 6 249 2.0× 49 2.0× 9 0.4× 9 0.5× 37 1.9× 22 262
L. Pain France 8 143 1.2× 15 0.6× 55 2.6× 6 0.3× 34 1.7× 31 178
I. Lagnado United States 11 403 3.3× 87 3.6× 16 0.8× 41 2.0× 60 3.0× 32 424

Countries citing papers authored by S. Kawazu

Since Specialization
Citations

This map shows the geographic impact of S. Kawazu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Kawazu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Kawazu more than expected).

Fields of papers citing papers by S. Kawazu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Kawazu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Kawazu. The network helps show where S. Kawazu may publish in the future.

Co-authorship network of co-authors of S. Kawazu

This figure shows the co-authorship network connecting the top 25 collaborators of S. Kawazu. A scholar is included among the top collaborators of S. Kawazu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Kawazu. S. Kawazu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Suzuki, Hitoshi, T. Harami, Yoshikazu Miyahara, et al.. (2002). Development of 5-cell RF cavity for SPring-8 booster synchrotron. 707–709. 2 indexed citations
2.
Yamamoto, Hidekazu, et al.. (1999). Effect of Ultrathin Top Silicon Layers on the X-Ray Photoelectron Emission from the Buried Oxide in Silicon-on-Insulator Wafers. Japanese Journal of Applied Physics. 38(9A). L1058–L1058. 1 indexed citations
3.
Yamamoto, Hidekazu, et al.. (1999). Elimination of X-Ray Photoelectron Diffraction Effect of Si(100) for Accurate Determination of SiO2 Overlayer Thickness. Japanese Journal of Applied Physics. 38(7A). L770–L770. 5 indexed citations
4.
Teramoto, Akinobu, et al.. (1999). Effects of N distribution on charge trapping and TDDB characteristics of N/sub 2/O annealed wet oxide. IEEE Transactions on Electron Devices. 46(6). 1121–1126. 12 indexed citations
5.
Yamamoto, Hidekazu, et al.. (1999). Accurate Thickness Determination of Both Thin SiO2 on Si and Thin Si on SiO2 by Angle-Resolved X-Ray Photoelectron Spectroscopy. Japanese Journal of Applied Physics. 38(7R). 4172–4172. 8 indexed citations
6.
Yamamoto, Hidekazu, et al.. (1999). Kikuchi-Band Analysis of X-Ray Photoelectron Diffraction Fine Structure of Si(100) by Precise Angle-Resolved X-Ray Photoelectron Spectroscopy. Japanese Journal of Applied Physics. 38(3R). 1547–1547. 12 indexed citations
7.
Teramoto, Akinobu, et al.. (1998). Improved reliability of NO treated NH3-nitrided oxide with regard to O2 annealing. Solid-State Electronics. 42(6). 921–924. 4 indexed citations
8.
Kobayashi, K., et al.. (1997). Improved reliability of wet oxidized nitride MOS capacitors in comparison to RTP N2O oxidized nitride films. Solid-State Electronics. 41(5). 749–755. 1 indexed citations
9.
10.
Kawazu, S., et al.. (1996). Stable Solution Method for Viscoelastic Oxidation Including Stress-Dependent Viscosity. Japanese Journal of Applied Physics. 35(8R). 4265–4265. 11 indexed citations
11.
Kawazu, S., et al.. (1991). Effects of Oxygen Concentration and Annealing Sequence on Microstructure of Separation by Implanted Oxygen Wafer with High-Temperature Annealing. Japanese Journal of Applied Physics. 30(1R). 112–112. 2 indexed citations
12.
Kawazu, S., et al.. (1988). Computer‐aided processing system (CAPS) for vlsi development. Electronics and Communications in Japan (Part II Electronics). 71(5). 13–23. 1 indexed citations
13.
Morimoto, Hiroaki, et al.. (1987). A New VLSI Diagnosis Technique: Focused Ion Beam Assisted Multi-level Circuit Probing. Reliability physics. 111–117. 7 indexed citations
14.
Kawazu, S., et al.. (1985). The effect of holes on the injection-induced breakdown in n-channel MOSFET's. IEEE Transactions on Electron Devices. 32(3). 722–725. 8 indexed citations
15.
Koyama, H., et al.. (1983). Stress compensation in laser diodes. Applied Physics Letters. 43(8). 733–735. 7 indexed citations
16.
Kawazu, S., et al.. (1983). Behavior of holes generated by impact ionization in n-channel MOSFET's. IEEE Transactions on Electron Devices. 30(12). 1678–1680. 5 indexed citations
17.
Kawazu, S., et al.. (1981). A numerical analysis of avalanche breakdown in short-channel MOSFETs. Solid-State Electronics. 24(7). 681–687. 7 indexed citations
18.
Kawazu, S., et al.. (1980). Automatic teg measuring and data processing system. Electronics and Communications in Japan (Part I Communications). 63(12). 87–97. 1 indexed citations
19.
Kawazu, S., et al.. (1979). Computer analysis of punch-through in MOSFETs. Solid-State Electronics. 22(1). 63–70. 30 indexed citations
20.
Akasaka, Youichi, et al.. (1972). Lateral spread of boron ions implanted in silicon. Applied Physics Letters. 21(4). 128–129. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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