Ashok Raman

896 total citations
42 papers, 721 citations indexed

About

Ashok Raman is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Ashok Raman has authored 42 papers receiving a total of 721 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in Ashok Raman's work include Radiation Effects in Electronics (22 papers), Semiconductor materials and devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). Ashok Raman is often cited by papers focused on Radiation Effects in Electronics (22 papers), Semiconductor materials and devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). Ashok Raman collaborates with scholars based in United States, France and Finland. Ashok Raman's co-authors include Marek Turowski, Ronald D. Schrimpf, John D. Cressler, D. G. Walker, Timothy S. Fisher, Robert A. Reed, Alex Fedoseyev, Robert Arslanbekov, Kurt A. Moen and Arto Javanainen and has published in prestigious journals such as Solid-State Electronics, IEEE Transactions on Nuclear Science and Applied Optics.

In The Last Decade

Ashok Raman

37 papers receiving 681 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ashok Raman United States 15 679 61 49 40 39 42 721
Zhangang Zhang China 13 415 0.6× 54 0.9× 61 1.2× 25 0.6× 97 2.5× 85 496
Antoine Touboul France 14 597 0.9× 106 1.7× 68 1.4× 41 1.0× 7 0.2× 66 643
Scot E. Swanson United States 12 367 0.5× 24 0.4× 26 0.5× 61 1.5× 23 0.6× 29 392
Steven H. Voldman United States 23 1.7k 2.5× 101 1.7× 63 1.3× 49 1.2× 17 0.4× 133 1.8k
A. Peczalski United States 13 404 0.6× 22 0.4× 14 0.3× 124 3.1× 11 0.3× 42 442
W. Tsai United States 11 202 0.3× 16 0.3× 134 2.7× 55 1.4× 74 1.9× 21 369
X. Federspiel France 15 758 1.1× 42 0.7× 29 0.6× 58 1.4× 178 4.6× 109 787
M. Haond France 18 906 1.3× 22 0.4× 123 2.5× 78 1.9× 23 0.6× 100 936
K. Tsukamoto Japan 13 463 0.7× 26 0.4× 87 1.8× 126 3.1× 32 0.8× 52 518
A. Sanseverino Italy 15 589 0.9× 6 0.1× 23 0.5× 59 1.5× 20 0.5× 56 610

Countries citing papers authored by Ashok Raman

Since Specialization
Citations

This map shows the geographic impact of Ashok Raman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ashok Raman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ashok Raman more than expected).

Fields of papers citing papers by Ashok Raman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ashok Raman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ashok Raman. The network helps show where Ashok Raman may publish in the future.

Co-authorship network of co-authors of Ashok Raman

This figure shows the co-authorship network connecting the top 25 collaborators of Ashok Raman. A scholar is included among the top collaborators of Ashok Raman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ashok Raman. Ashok Raman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Raman, Ashok, et al.. (2025). Two- and three-dimensional probe absorption measurements in diamond germanium-vacancy color centers. Applied Optics. 64(31). 9391–9391.
2.
Huang, Luocheng, Zachary Coppens, Kent A. Hallman, et al.. (2021). Long wavelength infrared imaging under ambient thermal radiation via an all-silicon metalens. Optical Materials Express. 11(9). 2907–2907. 32 indexed citations
3.
Newsome, David, et al.. (2020). Integrated Fluid and Materials Modeling of Environmental Barrier Coatings.. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information).
4.
Witulski, Arthur F., Dennis R. Ball, Robert A. Johnson, et al.. (2020). New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs. Materials science forum. 1004. 1066–1073. 9 indexed citations
5.
Witulski, Arthur F., Robert Arslanbekov, Ashok Raman, et al.. (2017). Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices. IEEE Transactions on Nuclear Science. 65(1). 256–261. 81 indexed citations
6.
Raman, Ashok, et al.. (2014). Detailed physics based modeling of triple-junction InGaP/GaAs/Ge solar cell. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8981. 898119–898119.
7.
Turowski, Marek, Ashok Raman, Alex Fedoseyev, et al.. (2013). Simulating the Radiation Response of GaAs Solar Cells Using a Defect-Based TCAD Model. IEEE Transactions on Nuclear Science. 60(4). 2477–2485. 20 indexed citations
8.
Turowski, Marek & Ashok Raman. (2012). Device-circuit models for extreme environment space electronics. International Conference Mixed Design of Integrated Circuits and Systems. 350–355. 1 indexed citations
9.
Turowski, Marek, Ashok Raman, & Weize Xiong. (2012). Accurate modeling of SOI Multi-Gate FETs and their transient response to radiation. 137–140. 2 indexed citations
10.
Turowski, Marek, Ashok Raman, Michael L. Alles, et al.. (2012). Effect of Carrier Transport in Oxides Surrounding Active Devices on SEU in 45 nm SOI SRAM. IEEE Transactions on Nuclear Science. 59(4). 728–734. 5 indexed citations
11.
Turowski, Marek, Ashok Raman, & Weize Xiong. (2011). Physics-based modeling of nonplanar nanodevices (FinFETs) and their response to radiation. International Conference Mixed Design of Integrated Circuits and Systems. 460–465. 9 indexed citations
12.
Turowski, Marek, Ashok Raman, Alex Fedoseyev, Dale McMorrow, & J.B. Boos. (2010). Analysis of transient radiation effects in III–V compound high electron mobility transistors using mixed-mode 3D simulations. International Conference Mixed Design of Integrated Circuits and Systems. 391–396. 5 indexed citations
13.
Turowski, Marek, Ashok Raman, Alexander A. Balandin, et al.. (2009). Analysis and modeling of space radiation effects in quantum dot based nanomaterials for high-efficiency photovoltaic cells. 89. 462–464. 2 indexed citations
14.
Turowski, Marek, Ashok Raman, Edward W. Taylor, et al.. (2009). Space radiation effects modeling and analysis of quantum dot based photovoltaic cells. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7467. 746705–746705. 6 indexed citations
15.
Turowski, Marek, et al.. (2009). Simulation of Quantum Dot-Based Nanodevices for Photovoltaic Applications with Multiscale Models. International Journal for Multiscale Computational Engineering. 7(1). 1–7. 2 indexed citations
16.
Pellish, Jonathan A., Robert A. Reed, Dale McMorrow, et al.. (2009). Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs. IEEE Transactions on Nuclear Science. 56(6). 3078–3084. 35 indexed citations
17.
Turowski, Marek, Alex Fedoseyev, Ashok Raman, & Kevin M. Warren. (2008). Single event upset modeling with nuclear reactions in nanoscale electronics. International Conference Mixed Design of Integrated Circuits and Systems. 443–448. 9 indexed citations
18.
Turowski, Marek, et al.. (2008). Full-chip to device level 3D thermal analysis of RF integrated circuits. 315–324. 3 indexed citations
19.
Raman, Ashok, et al.. (2004). Fast, automated thermal simulation of three-dimensional integrated circuits. 706–713. 41 indexed citations
20.
Raman, Ashok, D. G. Walker, & Timothy S. Fisher. (2003). Simulation of nonequilibrium thermal effects in power LDMOS transistors. Solid-State Electronics. 47(8). 1265–1273. 48 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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