Ravi Kumar Chanana

978 total citations · 1 hit paper
18 papers, 817 citations indexed

About

Ravi Kumar Chanana is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Ravi Kumar Chanana has authored 18 papers receiving a total of 817 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 3 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Ravi Kumar Chanana's work include Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Silicon Carbide Semiconductor Technologies (6 papers). Ravi Kumar Chanana is often cited by papers focused on Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Silicon Carbide Semiconductor Technologies (6 papers). Ravi Kumar Chanana collaborates with scholars based in India, United States and China. Ravi Kumar Chanana's co-authors include K. McDonald, John R. Williams, Sokrates T. Pantelides, C. C. Tin, L. C. Feldman, Robert A. Weller, Gil Yong Chung, Mrinal K. Das, O. W. Holland and John W. Palmour and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

Ravi Kumar Chanana

16 papers receiving 772 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

2001 538 citations Gil Yong Chung, C. C. Tin et al. IEEE Electron Device Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Ravi Kumar Chanana India	8	807	150	141	65	36	18	817
Lori A. Lipkin United States	14	809 1.0×	178 1.2×	131 0.9×	79 1.2×	50 1.4×	24	832
K. Rottner Sweden	10	399 0.5×	52 0.3×	114 0.8×	51 0.8×	28 0.8×	25	409
T. Troffer Germany	8	505 0.6×	58 0.4×	142 1.0×	59 0.9×	53 1.5×	12	514
弘之松波	3	393 0.5×	79 0.5×	97 0.7×	122 1.9×	43 1.2×	5	450
D. Alok United States	13	580 0.7×	56 0.4×	202 1.4×	41 0.6×	30 0.8×	27	594
I. Kamata Japan	11	524 0.6×	120 0.8×	156 1.1×	54 0.8×	39 1.1×	20	547
N.S. Savkina Russia	13	502 0.6×	50 0.3×	175 1.2×	92 1.4×	57 1.6×	76	538
Shiyang Ji Japan	13	398 0.5×	122 0.8×	161 1.1×	91 1.4×	11 0.3×	58	470
Hironori Nishino Japan	8	319 0.4×	101 0.7×	92 0.7×	59 0.9×	32 0.9×	23	341
Masato Noborio Japan	13	672 0.8×	156 1.0×	85 0.6×	49 0.8×	34 0.9×	35	689

Countries citing papers authored by Ravi Kumar Chanana

Since Specialization

Citations

This map shows the geographic impact of Ravi Kumar Chanana's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ravi Kumar Chanana with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ravi Kumar Chanana more than expected).

Fields of papers citing papers by Ravi Kumar Chanana

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ravi Kumar Chanana. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ravi Kumar Chanana. The network helps show where Ravi Kumar Chanana may publish in the future.

Co-authorship network of co-authors of Ravi Kumar Chanana

This figure shows the co-authorship network connecting the top 25 collaborators of Ravi Kumar Chanana. A scholar is included among the top collaborators of Ravi Kumar Chanana based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ravi Kumar Chanana. Ravi Kumar Chanana is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

Chanana, Ravi Kumar. (2017). Accurate Dielectric Capacitance Determination from MetalInsulator-Semiconductor Devices Having Bias and Frequency Dependent Conductance Due To Leakage Current. IOSR Journal of Electrical and Electronics Engineering. 12(1). 1–5.

Chanana, Ravi Kumar. (2016). A new method of calculating charged deep level defects density in doped semiconductors from the band offsets of MIS device interfaces. IOSR Journal of Applied Physics. 8(4). 53–56. 1 indexed citations

Chanana, Ravi Kumar. (2014). BOEMDET-Band Offsets and Effective Mass Determination Technique utilizing Fowler-Nordheim tunneling slope constants in MIS devices on silicon. IOSR Journal of Applied Physics. 6(4). 55–61. 5 indexed citations

Chanana, Ravi Kumar. (2014). BOEMDET-Band Offsets and Effective Mass Determination Technique applied to MIS devices on silicon to obtain the unknown bandgap of insulators. IOSR Journal of Applied Physics. 6(6). 48–55. 5 indexed citations

Chanana, Ravi Kumar. (2014). Determination of electron and hole effective masses in thermal oxide utilizing an n-channel silicon MOSFET. IOSR Journal of Applied Physics. 6(3). 1–7. 14 indexed citations

Chanana, Ravi Kumar. (2011). Determination of hole effective mass in SiO2 and SiC conduction band offset using Fowler–Nordheim tunneling characteristics across metal-oxide-semiconductor structures after applying oxide field corrections. Journal of Applied Physics. 109(10). 41 indexed citations

Williams, John R., Gil Yong Chung, C. C. Tin, et al.. (2002). Passivation of the 4H-SiC/SiO<sub>2</sub> Interface with Nitric Oxide. Materials science forum. 389-393. 967–972. 17 indexed citations

Gao, Frank, et al.. (2002). The effects of buffer thickness on GaAs MESFET characteristics: channel–substrate current, drain breakdown, and reliability. Microelectronics Reliability. 42(7). 1003–1010. 6 indexed citations

Chung, Gil Yong, John R. Williams, C. C. Tin, et al.. (2001). Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation. Applied Surface Science. 184(1-4). 399–403. 28 indexed citations

10.

Chung, Gil Yong, C. C. Tin, John R. Williams, et al.. (2001). Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide. IEEE Electron Device Letters. 22(4). 176–178. 538 indexed citations breakdown →

11.

Pantelides, Sokrates T., R. Buczko, Massimiliano Di Ventra, et al.. (2000). Bonding, Defects, And Defect Dynamics In The Sic-SiO₂ System. MRS Proceedings. 640. 1 indexed citations

12.

Tin, C. C., John R. Williams, K. McDonald, et al.. (2000). Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors. Applied Physics Letters. 77(22). 3601–3603. 49 indexed citations

13.

Chanana, Ravi Kumar, K. McDonald, Massimiliano Di Ventra, et al.. (2000). Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures. Applied Physics Letters. 77(16). 2560–2562. 90 indexed citations

14.

Chanana, Ravi Kumar, Har Narayan Upadhyay, R. Dwivedi, & S.K. Srivastava. (1995). Electrical properties of 6.3 nm RF oxygen plasma oxide grown near room temperature with in situ dry cleaning of Si surface. Solid-State Electronics. 38(5). 1075–1080. 1 indexed citations

15.

Upadhyay, Har Narayan, Ravi Kumar Chanana, R. K. Dwivedi, & Saurabh Srivastava. (1994). Fowler-nordheim emission and electron trapping in pure N2O/SiH4 PECVD oxide deposited on N2, H2 and O2 plasma precleaned Si wafers. Solid-State Electronics. 37(9). 1671–1672.

16.

Chanana, Ravi Kumar, R. Dwivedi, & Sanjay Srivastava. (1993). Effect of annealing and plasma precleaning on the electrical properties of N2O/SiH4 PECVD oxide as gate material in MOSFETs and CCDs. Solid-State Electronics. 36(7). 1021–1026. 6 indexed citations

17.

Chanana, Ravi Kumar, R. Dwivedi, & S.K. Srivastava. (1992). Silicon wafer cleaning with CF4/H2 plasma and its effect on the properties of dry thermally grown oxide. Solid-State Electronics. 35(10). 1417–1421. 10 indexed citations

18.

Chanana, Ravi Kumar, R. Dwivedi, & S.K. Srivastava. (1991). Study of electrical properties of SiO2 grown over plasma-cleaned silicon surfaces. Solid-State Electronics. 34(12). 1463–1465. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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