I. Kamata

649 total citations
20 papers, 547 citations indexed

About

I. Kamata is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, I. Kamata has authored 20 papers receiving a total of 547 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 7 papers in Electronic, Optical and Magnetic Materials and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in I. Kamata's work include Silicon Carbide Semiconductor Technologies (16 papers), Semiconductor materials and devices (9 papers) and Silicon and Solar Cell Technologies (7 papers). I. Kamata is often cited by papers focused on Silicon Carbide Semiconductor Technologies (16 papers), Semiconductor materials and devices (9 papers) and Silicon and Solar Cell Technologies (7 papers). I. Kamata collaborates with scholars based in Japan and United States. I. Kamata's co-authors include Hidekazu Tsuchida, Masahiro Nagano, Kunikazu Izumi, Takehiko Tawara, Michael Dudley, Yi Chen, Tomonori Nakamura, Hajime Okumura, Tomohisa Kato and Norihiro Hoshino and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Applied Crystallography.

In The Last Decade

I. Kamata

20 papers receiving 537 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
I. Kamata Japan	11	524	156	120	54	39	20	547
Hironori Nishino Japan	8	319 0.6×	92 0.6×	101 0.8×	59 1.1×	32 0.8×	23	341
Lori A. Lipkin United States	14	809 1.5×	131 0.8×	178 1.5×	79 1.5×	50 1.3×	24	832
T. Troffer Germany	8	505 1.0×	142 0.9×	58 0.5×	59 1.1×	53 1.4×	12	514
K. Rottner Sweden	10	399 0.8×	114 0.7×	52 0.4×	51 0.9×	28 0.7×	25	409
Takamitsu Kawahara Japan	11	430 0.8×	69 0.4×	151 1.3×	36 0.7×	38 1.0×	22	442
Akimasa Kinoshita Japan	12	375 0.7×	128 0.8×	43 0.4×	48 0.9×	19 0.5×	40	407
Hironori Yoshioka Japan	12	554 1.1×	100 0.6×	107 0.9×	45 0.8×	31 0.8×	26	580
Ryosuke Iijima Japan	13	519 1.0×	84 0.5×	73 0.6×	73 1.4×	24 0.6×	70	565
Hervé Peyre France	12	331 0.6×	101 0.6×	98 0.8×	93 1.7×	20 0.5×	55	372
Ravi Kumar Chanana India	8	807 1.5×	141 0.9×	150 1.3×	65 1.2×	36 0.9×	18	817

Countries citing papers authored by I. Kamata

Since Specialization

Citations

This map shows the geographic impact of I. Kamata's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Kamata with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Kamata more than expected).

Fields of papers citing papers by I. Kamata

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Kamata. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Kamata. The network helps show where I. Kamata may publish in the future.

Co-authorship network of co-authors of I. Kamata

This figure shows the co-authorship network connecting the top 25 collaborators of I. Kamata. A scholar is included among the top collaborators of I. Kamata based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. Kamata. I. Kamata is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Tokuda, Yuichiro, I. Kamata, Tetsuya Miyazawa, et al.. (2018). Glide velocities of Si-core partial dislocations for double-Shockley stacking fault expansion in heavily nitrogen-doped SiC during high-temperature annealing. Journal of Applied Physics. 124(2). 7 indexed citations

Kamata, I., et al.. (2018). Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC. Journal of Applied Physics. 124(12). 15 indexed citations

Tokuda, Yuichiro, Takako Yamashita, I. Kamata, et al.. (2017). Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing. Journal of Applied Physics. 122(4). 23 indexed citations

Tokuda, Yuichiro, I. Kamata, Norihiro Hoshino, et al.. (2017). Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique. Journal of Crystal Growth. 468. 889–893. 14 indexed citations

Mori, Daisuke, et al.. (2013). X-ray microbeam three-dimensional topography for dislocation strain-field analysis of 4H-SiC. Journal of Applied Physics. 114(2). 8 indexed citations

Kamata, I., Masahiro Nagano, Hidekazu Tsuchida, Yi Chen, & Michael Dudley. (2008). Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography. Journal of Crystal Growth. 311(5). 1416–1422. 49 indexed citations

Tsuchida, Hidekazu, I. Kamata, & Masahiro Nagano. (2007). Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth. Journal of Crystal Growth. 310(4). 757–765. 71 indexed citations

Tsuchida, Hidekazu, I. Kamata, & Masahiro Nagano. (2007). Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching. Journal of Crystal Growth. 306(2). 254–261. 65 indexed citations

Vetter, William M., Hidekazu Tsuchida, I. Kamata, & Michael Dudley. (2005). Simulation of threading dislocation images in X-ray topographs of silicon carbide homo-epilayers. Journal of Applied Crystallography. 38(3). 442–447. 9 indexed citations

10.

Tsuchida, Hidekazu, et al.. (2005). Structural analysis and reduction of in-grown stacking faults in 4H–SiC epilayers. Applied Physics Letters. 86(20). 94 indexed citations

11.

Nakamura, Tomonori, et al.. (2005). A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature. IEEE Electron Device Letters. 26(2). 99–101. 36 indexed citations

12.

Tsuchida, Hidekazu, et al.. (2004). Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density. MRS Proceedings. 815. 6 indexed citations

13.

Tsuchida, Hidekazu, et al.. (2002). Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor. Journal of Crystal Growth. 237-239. 1206–1212. 62 indexed citations

14.

Tsuchida, Hidekazu, et al.. (2000). Growth of thick 4H-SiC epilayers in a vertical radiant-heating reactor. MRS Proceedings. 640. 4 indexed citations

15.

Tsuchida, Hidekazu, I. Kamata, & Kunikazu Izumi. (1999). Infrared attenuated total reflection spectroscopy of 6H–SiC(0001) and (0001) surfaces. Journal of Applied Physics. 85(7). 3569–3575. 36 indexed citations

16.

Kamata, I., et al.. (1999). Vibrational study on the carbonization of Si surface. Materials Science and Engineering B. 61-62. 531–534. 3 indexed citations

17.

Kamata, I., Hidekazu Tsuchida, & Kunikazu Izumi. (1998). The structure of 3C–SiC carbonized layer on Si substrate. Microelectronic Engineering. 43-44. 647–654. 3 indexed citations

18.

Tsuchida, Hidekazu, I. Kamata, & Kunikazu Izumi. (1997). Infrared spectroscopy of hydrides on the 6H-SiC surface. Applied Physics Letters. 70(23). 3072–3074. 35 indexed citations

19.

Tsuchida, Hidekazu, I. Kamata, & Kunikazu Izumi. (1996). Structure of Thermally Grown SiO₂ on Crystalline 6H‐SíC. MRS Proceedings. 446. 1 indexed citations

20.

Hara, Naoki, Takashi Kamiyama, I. Kamata, et al.. (1992). Evidence for new phases in Ln-doped La1.875Ba0.125CuO4 (Ln=Nd, Sm). Solid State Communications. 82(12). 975–978. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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