K. McDonald

1.9k total citations · 1 hit paper
26 papers, 1.5k citations indexed

About

K. McDonald is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, K. McDonald has authored 26 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 7 papers in Electronic, Optical and Magnetic Materials and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in K. McDonald's work include Semiconductor materials and devices (22 papers), Silicon Carbide Semiconductor Technologies (17 papers) and Copper Interconnects and Reliability (7 papers). K. McDonald is often cited by papers focused on Semiconductor materials and devices (22 papers), Silicon Carbide Semiconductor Technologies (17 papers) and Copper Interconnects and Reliability (7 papers). K. McDonald collaborates with scholars based in United States, Brazil and Japan. K. McDonald's co-authors include L. C. Feldman, John R. Williams, Robert A. Weller, Gil Yong Chung, C. C. Tin, Sokrates T. Pantelides, Ravi Kumar Chanana, Massimiliano Di Ventra, Mrinal K. Das and O. W. Holland and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

K. McDonald

26 papers receiving 1.5k citations

Hit Papers

Improved inversion channel mobility for 4H-SiC MOSFETs fo... 2001 2026 2009 2017 2001 100 200 300 400 500

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. McDonald United States 14 1.5k 294 272 105 82 26 1.5k
Marilena Vivona Italy 16 763 0.5× 103 0.4× 318 1.2× 113 1.1× 129 1.6× 56 839
C.D. Brandt United States 18 899 0.6× 118 0.4× 284 1.0× 57 0.5× 134 1.6× 49 1000
M. F. MacMillan United States 16 672 0.4× 181 0.6× 232 0.9× 51 0.5× 182 2.2× 50 813
C.H. Carter United States 8 588 0.4× 83 0.3× 157 0.6× 42 0.4× 106 1.3× 14 644
L. Manchanda United States 15 828 0.6× 146 0.5× 150 0.6× 25 0.2× 370 4.5× 31 912
S. Sriram United States 14 606 0.4× 63 0.2× 180 0.7× 27 0.3× 85 1.0× 53 670
Ruggero Anzalone Italy 15 662 0.4× 182 0.6× 129 0.5× 119 1.1× 139 1.7× 79 771
Andrea Severino Italy 12 360 0.2× 248 0.8× 168 0.6× 47 0.4× 82 1.0× 75 550
K. G. Irvine United States 15 966 0.6× 175 0.6× 363 1.3× 59 0.6× 122 1.5× 35 1.1k
Naruhisa Miura Japan 17 769 0.5× 112 0.4× 248 0.9× 16 0.2× 127 1.5× 60 935

Countries citing papers authored by K. McDonald

Since Specialization
Citations

This map shows the geographic impact of K. McDonald's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. McDonald with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. McDonald more than expected).

Fields of papers citing papers by K. McDonald

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. McDonald. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. McDonald. The network helps show where K. McDonald may publish in the future.

Co-authorship network of co-authors of K. McDonald

This figure shows the co-authorship network connecting the top 25 collaborators of K. McDonald. A scholar is included among the top collaborators of K. McDonald based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. McDonald. K. McDonald is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
McLain, Michael Lee, Harold P. Hjalmarson, Patrick R. Mickel, et al.. (2014). The Susceptibility of <formula formulatype="inline"> <tex Notation="TeX">${\hbox {TaO}}_{\rm x}$</tex></formula>-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose. IEEE Transactions on Nuclear Science. 61(6). 2997–3004. 12 indexed citations
2.
McLain, Michael Lee, et al.. (2013). Effects of High Dose Rate Ionizing Radiation on Fused Silica and Sapphire Films. IEEE Transactions on Nuclear Science. 60(6). 4116–4121. 1 indexed citations
3.
Chung, Gil Yong, John R. Williams, K. McDonald, & L. C. Feldman. (2004). 4H-SiC oxynitridation for generation of insulating layers. Journal of Physics Condensed Matter. 16(17). S1857–S1871. 27 indexed citations
4.
Lu, Chao‐Yang, James A. Cooper, Takashi Tsuji, et al.. (2003). Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface. IEEE Transactions on Electron Devices. 50(7). 1582–1588. 125 indexed citations
5.
McDonald, K., Robert A. Weller, Sokrates T. Pantelides, et al.. (2003). Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC. Journal of Applied Physics. 93(5). 2719–2722. 84 indexed citations
6.
McDonald, K., L. C. Feldman, Robert A. Weller, et al.. (2003). Kinetics of NO nitridation in SiO2/4H–SiC. Journal of Applied Physics. 93(4). 2257–2261. 52 indexed citations
7.
Chung, Gil Yong, John R. Williams, Tamara Isaacs‐Smith, et al.. (2002). Nitrogen passivation of deposited oxides on n 4H–SiC. Applied Physics Letters. 81(22). 4266–4268. 18 indexed citations
8.
Chung, Gil Yong, C. C. Tin, Jonghan Won, et al.. (2002). Interface state densities near the conduction band edge in N-type 4H- and 6H-SiC. 5. 409–413. 4 indexed citations
9.
Williams, John R., Gil Yong Chung, C. C. Tin, et al.. (2002). Passivation of the 4H-SiC/SiO<sub>2</sub> Interface with Nitric Oxide. Materials science forum. 389-393. 967–972. 17 indexed citations
10.
Lu, Chao‐Yang, James A. Cooper, Gil Yong Chung, et al.. (2002). Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities. Materials science forum. 389-393. 977–980. 16 indexed citations
11.
Chung, Gil Yong, John R. Williams, C. C. Tin, et al.. (2001). Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation. Applied Surface Science. 184(1-4). 399–403. 28 indexed citations
12.
Chung, Gil Yong, C. C. Tin, John R. Williams, et al.. (2001). Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide. IEEE Electron Device Letters. 22(4). 176–178. 538 indexed citations breakdown →
13.
Pantelides, Sokrates T., R. Buczko, Massimiliano Di Ventra, et al.. (2000). Bonding, Defects, And Defect Dynamics In The Sic-SiO2 System. MRS Proceedings. 640. 1 indexed citations
14.
Pantelides, Sokrates T., Gerd Duscher, Massimiliano Di Ventra, et al.. (2000). Atomic-Scale Engineering of the SiC-SiO<sub>2</sub> Interface. Materials science forum. 338-342. 1133–1136. 5 indexed citations
15.
Chung, Gil Yong, C. C. Tin, John R. Williams, et al.. (2000). The Effects of Post-Oxidation Anneal Conditions on Interface State Density Near the Conduction Band Edge and Inversion Channel Mobility for SiC MOSFETs. MRS Proceedings. 622. 1 indexed citations
16.
McDonald, K., Robert A. Weller, L. C. Feldman, et al.. (2000). Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures. Applied Physics Letters. 76(5). 568–570. 40 indexed citations
17.
McDonald, K., Robert A. Weller, & V.Kh. Liechtenstein. (1999). Quantitative evaluation of the determinants of resolution in time-of-flight spectrometers for medium energy ion beam analysis. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 152(1). 171–181. 9 indexed citations
18.
Huang, Mengbing, K. McDonald, J. C. Keay, et al.. (1998). Suppression of penetration of aluminum into 8-hydroxyquinoline aluminum via a thin oxide barrier. Applied Physics Letters. 73(20). 2914–2916. 25 indexed citations
19.
Weller, Robert A., et al.. (1996). Analysis of a thin, silicon-oxide, silicon-nitride multilayer target by time-of-flight medium energy backscattering. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 118(1-4). 556–559. 7 indexed citations
20.
McDonald, K., Mark A. Newton, E. E. Kunhardt, M. Kristiansen, & Arthur H. Guenther. (1980). An Electron-Beam Triggered Spark Gap. IEEE Transactions on Plasma Science. 8(3). 181–185. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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