K. McDonald

1.9k citations

26 papers · 1.5k · 1 hit paper · h-index 14

Impact in

Electrical and Electronic Engineering top 2%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Electromagnetic Compatibility and Noise Suppression
- Thin-Film Transistor Technologies
Ceramics and Composites top 5%
- Advanced ceramic materials synthesis

Papers in

Electrical and Electronic Engineering 25
- Semiconductor materials and devices 22
- Silicon Carbide Semiconductor Technologies 17
- Advancements in Semiconductor Devices and Circuit Design 4
- Integrated Circuits and Semiconductor Failure Analysis 3
Electronic, Optical and Magnetic Materials 7
- Copper Interconnects and Reliability 7

Co-authors: L. C. Feldman (20 shared papers)John R. Williams (18 shared papers)Robert A. Weller (17 shared papers)Gil Yong Chung (16 shared papers)C. C. Tin (13 shared papers)Sokrates T. Pantelides (11 shared papers)Ravi Kumar Chanana (6 shared papers)Massimiliano Di Ventra (6 shared papers)
Journals: Applied Physics Letters (6 papers)IEEE Transactions on Nuclear Science (3 papers)Journal of Applied Physics (2 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (2 papers)IEEE Electron Device Letters (1 paper)
Partner nations: United States Brazil Japan

In The Last Decade

K. McDonald

26 papers receiving 1.5k citations

K. McDonald's Hit Papers

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Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide 2001 · 538 citations

Peers

Countries citing papers authored by K. McDonald

Since Specialization

Citations

This map shows the geographic impact of K. McDonald's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. McDonald with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. McDonald more than expected).

Fields of papers citing papers by K. McDonald

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. McDonald. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. McDonald. The network helps show where K. McDonald may publish in the future.

Co-authors

The 25 scholars most cited alongside K. McDonald, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with K. McDonald Line = papers co-authored together K. McDonald links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 26 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide IEEE Electron Device Letters ·Gil Yong Chung, C. C. Tin, John R. Williams, K. McDonald, Ravi Kumar Chanana, Robert A. Weller, Sokrates T. Pantelides, L. C. Feldman, O. W. Holland, Mrinal K. Das, John W. Palmour Hit paper breakdown →	2001	538
2	Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide Applied Physics Letters ·Gil Yong Chung, C. C. Tin, John R. Williams, K. McDonald, Massimiliano Di Ventra, Sokrates T. Pantelides, L. C. Feldman, Robert A. Weller	2000	359
3	Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface IEEE Transactions on Electron Devices ·Chao‐Yang Lu, James A. Cooper, Takashi Tsuji, Gilyong Chung, John R. Williams, K. McDonald, L. C. Feldman	2003	125
4	Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures Applied Physics Letters ·Ravi Kumar Chanana, K. McDonald, Massimiliano Di Ventra, Sokrates T. Pantelides, L. C. Feldman, Gil Yong Chung, C. C. Tin, John R. Williams, Robert A. Weller	2000	90
5	Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC Journal of Applied Physics ·K. McDonald, Robert A. Weller, Sokrates T. Pantelides, L. C. Feldman, Gil Yong Chung, C. C. Tin, John R. Williams	2003	84
6	Kinetics of NO nitridation in SiO2/4H–SiC Journal of Applied Physics ·K. McDonald, L. C. Feldman, Robert A. Weller, Gil Yong Chung, C. C. Tin, John R. Williams	2003	52
7	Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors Applied Physics Letters ·Gilyong Chung, C. C. Tin, John R. Williams, K. McDonald, Massimiliano Di Ventra, Ravi Kumar Chanana, Sokrates T. Pantelides, L. C. Feldman, Robert A. Weller	2000	49
8	Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures Applied Physics Letters ·K. McDonald, Mingjun Huang, Robert A. Weller, L. C. Feldman, John R. Williams, F. C. Stedile, I. J. R. Baumvol, C. Radtke	2000	40
9	Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation Applied Surface Science ·Gil Yong Chung, John R. Williams, C. C. Tin, K. McDonald, Damon B. Farmer, Ravi Kumar Chanana, Sokrates T. Pantelides, O. W. Holland, L. C. Feldman	2001	28
10	4H-SiC oxynitridation for generation of insulating layers Journal of Physics Condensed Matter ·Gil Yong Chung, John R. Williams, K. McDonald, L. C. Feldman	2004	27
11	Suppression of penetration of aluminum into 8-hydroxyquinoline aluminum via a thin oxide barrier Applied Physics Letters ·Mengbing Huang, K. McDonald, J. C. Keay, Yalong Wang, Sandra J. Rosenthal, Robert A. Weller, L. C. Feldman	1998	25
12	Nitrogen passivation of deposited oxides on n 4H–SiC Applied Physics Letters ·Gil Yong Chung, John R. Williams, Tamara Isaacs‐Smith, F. Ren, K. McDonald, L. C. Feldman	2002	18
13	Passivation of the 4H-SiC/SiO<sub>2</sub> Interface with Nitric Oxide Materials science forum ·John R. Williams, Gil Yong Chung, C. C. Tin, K. McDonald, Damon B. Farmer, Ravi Kumar Chanana, Robert A. Weller, Sokrates T. Pantelides, O. W. Holland, Mrinal K. Das, L. C. Feldman	2002	17
14	Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities Materials science forum ·Chao‐Yang Lu, James A. Cooper, Gil Yong Chung, John R. Williams, K. McDonald, L. C. Feldman	2002	16
15	The Susceptibility of <formula formulatype="inline"> <tex Notation="TeX">${\hbox {TaO}}_{\rm x}$</tex></formula>-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose IEEE Transactions on Nuclear Science ·Michael Lee McLain, Harold P. Hjalmarson, Tim J. Sheridan, Patrick R. Mickel, Don Hanson, K. McDonald, David Russell Hughart, Matthew Marinella	2014	12
16	An Electron-Beam Triggered Spark Gap IEEE Transactions on Plasma Science ·K. McDonald, Mark A. Newton, E. E. Kunhardt, M. Kristiansen, Arthur H. Guenther	1980	10
17	Quantitative evaluation of the determinants of resolution in time-of-flight spectrometers for medium energy ion beam analysis Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·K. McDonald, Robert A. Weller, V.Kh. Liechtenstein	1999	9
18	Analysis of a thin, silicon-oxide, silicon-nitride multilayer target by time-of-flight medium energy backscattering Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Robert A. Weller, K. McDonald, Diane Pedersen, J. A. Keenan	1996	7
19	Atomic-Scale Engineering of the SiC-SiO<sub>2</sub> Interface Materials science forum ·Sokrates T. Pantelides, Gerd Duscher, Massimiliano Di Ventra, R. Buczko, K. McDonald, Mengbing Huang, Robert A. Weller, I. J. R. Baumvol, F. C. Stedile, C. Radtke, S. J. Pennycook, Gil Yong Chung, C. C. Tin, John R. Williams, Jonghan Won, L. C. Feldman	2000	5
20	Interface state densities near the conduction band edge in N-type 4H- and 6H-SiC Gil Yong Chung, C. C. Tin, Jonghan Won, John R. Williams, K. McDonald, Robert A. Weller, Sokrates T. Pantelides, L. C. Feldman	2002	4

About K. McDonald

K. McDonald is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Ceramics and Composites and Radiation, having authored 26 papers that have together received 1.5k indexed citations. Recurring topics across this work include Semiconductor materials and devices (22 papers), Silicon Carbide Semiconductor Technologies (17 papers), Copper Interconnects and Reliability (7 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers), Semiconductor materials and interfaces (4 papers), Advanced ceramic materials synthesis (3 papers), Integrated Circuits and Semiconductor Failure Analysis (3 papers) and Electron and X-Ray Spectroscopy Techniques (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.5k citations), Ceramics and Composites (105 citations), Electronic, Optical and Magnetic Materials (294 citations), Atomic and Molecular Physics, and Optics (272 citations) and Condensed Matter Physics (49 citations). K. McDonald has collaborated with scholars based in United States, Brazil and Japan. Frequent co-authors include L. C. Feldman, John R. Williams, Robert A. Weller, Gil Yong Chung, C. C. Tin, Sokrates T. Pantelides, Ravi Kumar Chanana, Massimiliano Di Ventra, Mrinal K. Das and O. W. Holland. Their work appears in journals such as Applied Physics Letters, IEEE Transactions on Nuclear Science, Journal of Applied Physics, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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