H.-H. Wehmann

659 total citations
33 papers, 568 citations indexed

About

H.-H. Wehmann is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, H.-H. Wehmann has authored 33 papers receiving a total of 568 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Atomic and Molecular Physics, and Optics, 15 papers in Electrical and Electronic Engineering and 15 papers in Materials Chemistry. Recurrent topics in H.-H. Wehmann's work include Semiconductor Quantum Structures and Devices (13 papers), GaN-based semiconductor devices and materials (12 papers) and ZnO doping and properties (10 papers). H.-H. Wehmann is often cited by papers focused on Semiconductor Quantum Structures and Devices (13 papers), GaN-based semiconductor devices and materials (12 papers) and ZnO doping and properties (10 papers). H.-H. Wehmann collaborates with scholars based in Germany, Slovakia and Uzbekistan. H.-H. Wehmann's co-authors include A. Waag, A. Schlachetzki, Martin Straßburg, Jiandong Wei, M. Al‐Suleiman, Werner Bergbauer, Stephan Merzsch, Sönke Fündling, Erwin Peiner and A. Bakin and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

H.-H. Wehmann

32 papers receiving 559 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H.-H. Wehmann Germany	15	333	302	241	226	162	33	568
Christos Thomidis United States	15	439 1.3×	179 0.6×	240 1.0×	184 0.8×	246 1.5×	35	561
P. M. Bridger United States	11	453 1.4×	165 0.5×	174 0.7×	378 1.7×	281 1.7×	17	645
Hajime Fujikura Japan	18	423 1.3×	301 1.0×	242 1.0×	486 2.2×	351 2.2×	65	803
Nathan G. Young United States	14	531 1.6×	136 0.5×	159 0.7×	256 1.1×	313 1.9×	19	595
Koji Uematsu Japan	5	506 1.5×	238 0.8×	274 1.1×	214 0.9×	151 0.9×	5	547
C.J. Collins United States	13	496 1.5×	145 0.5×	339 1.4×	258 1.1×	218 1.3×	23	650
D. S. Rawal India	15	424 1.3×	153 0.5×	164 0.7×	474 2.1×	169 1.0×	83	619
George Ade Germany	10	462 1.4×	223 0.7×	165 0.7×	177 0.8×	301 1.9×	19	577
Veit Hoffmann Germany	14	441 1.3×	222 0.7×	197 0.8×	273 1.2×	235 1.5×	44	585
B. Borisov United States	15	639 1.9×	304 1.0×	424 1.8×	310 1.4×	164 1.0×	43	788

Countries citing papers authored by H.-H. Wehmann

Since Specialization

Citations

This map shows the geographic impact of H.-H. Wehmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.-H. Wehmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.-H. Wehmann more than expected).

Fields of papers citing papers by H.-H. Wehmann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.-H. Wehmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.-H. Wehmann. The network helps show where H.-H. Wehmann may publish in the future.

Co-authorship network of co-authors of H.-H. Wehmann

This figure shows the co-authorship network connecting the top 25 collaborators of H.-H. Wehmann. A scholar is included among the top collaborators of H.-H. Wehmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H.-H. Wehmann. H.-H. Wehmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Kahnt, Maik, Gerald Falkenberg, Jan Garrevoet, et al.. (2018). Simultaneous Hard X-ray Ptychographic Tomography and X-ray Fluorescence To-mography of Isolated Hollow Core-Shell GaN Rods. Microscopy and Microanalysis. 24(S2). 34–35. 4 indexed citations

Wang, Xue, U. Jahn, Martin Mandl, et al.. (2015). Growth and characterization of mixed polar GaN columns and core–shell LEDs. physica status solidi (a). 212(4). 727–731. 9 indexed citations

Wang, Xue, U. Jahn, Johannes Ledig, et al.. (2013). The MOVPE growth mechanism of catalyst-free self-organized GaN columns in H2 and N2 carrier gases. Journal of Crystal Growth. 384. 61–65. 4 indexed citations

Wang, Xue, Shufeng Li, Sönke Fündling, et al.. (2013). Mechanism of nucleation and growth of catalyst-free self-organized GaN columns by MOVPE. Journal of Physics D Applied Physics. 46(20). 205101–205101. 11 indexed citations

Merzsch, Stephan, M. Al‐Suleiman, Jiandong Wei, et al.. (2011). Polarity and Its Influence on Growth Mechanism during MOVPE Growth of GaN Sub-micrometer Rods. Crystal Growth & Design. 11(5). 1573–1577. 111 indexed citations

Neumann, R., et al.. (2011). Contacts on high aspect ratio 3D structures. Microelectronic Engineering. 88(11). 3224–3226. 1 indexed citations

Wei, Jiandong, et al.. (2010). Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity. Applied Physics Letters. 97(17). 27 indexed citations

Stranz, Andrej, et al.. (2009). Fabrication and Characterization of Nanopillars for Silicon-Based Thermoelectrics. Journal of Electronic Materials. 39(9). 2013–2016. 7 indexed citations

Stranz, Andrej, et al.. (2009). ICP cryogenic dry etching for shallow and deep etching in silicon. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7362. 736213–736213. 5 indexed citations

10.

Postels, B., H.-H. Wehmann, A. Bakin, et al.. (2007). Selective growth of ZnO nanorods in aqueous solution. Superlattices and Microstructures. 42(1-6). 425–430. 18 indexed citations

11.

Al‐Suleiman, M., A. Che Mofor, Abdelhamid El‐Shaer, et al.. (2006). Photoluminescence properties: Catalyst-free ZnO nanorods and layers versus bulk ZnO. Applied Physics Letters. 89(23). 31 indexed citations

12.

Schlachetzki, A., et al.. (2001). Monolithic InGaAsP optoelectronic devices with silicon electronics. IEEE Journal of Quantum Electronics. 37(10). 1246–1252. 14 indexed citations

13.

Wehmann, H.-H., et al.. (1998). Etching simulation of convex and mixed InP and Si structures. Sensors and Actuators A Physical. 69(3). 251–258. 9 indexed citations

14.

Kúdela, R., et al.. (1997). Properties of silicon pulse doped InGaP layers grown by LP-MOCVD. Materials Science and Engineering B. 44(1-3). 33–36. 4 indexed citations

15.

Kúdela, R., et al.. (1996). Delta-doped InGaP grown by low pressure metalorganic chemical vapor deposition. Applied Physics Letters. 69(12). 1731–1733. 2 indexed citations

16.

Peiner, Erwin, et al.. (1995). Area‐Selective Diffusion of Zn in InP / In0.53Ga0.47As / InP for Lateral pn Photodiodes. Journal of The Electrochemical Society. 142(3). 985–989. 3 indexed citations

17.

Peiner, Erwin, et al.. (1995). Performance of InGaAs photodetectors: lateral p-n and p-n-p diodes. IEEE Photonics Technology Letters. 7(12). 1480–1482. 1 indexed citations

18.

Wehmann, H.-H., et al.. (1993). InP on Si substrates characterized by spectroscopic ellipsometry. Journal of Applied Physics. 74(9). 5889–5891. 4 indexed citations

19.

Peiner, Erwin, et al.. (1992). A new maskless selective-growth process for InP on (100) Si. Journal of Applied Physics. 72(9). 4366–4368. 13 indexed citations

20.

Kowalsky, Wolfgang, A. Schlachetzki, & H.-H. Wehmann. (1984). Transferred-electron domains in In0.53Ga0.47As in dependence on the the nl product. Solid-State Electronics. 27(2). 187–189. 20 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact