R. Castagné

834 total citations · 1 hit paper
22 papers, 602 citations indexed

About

R. Castagné is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, R. Castagné has authored 22 papers receiving a total of 602 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Atomic and Molecular Physics, and Optics, 17 papers in Electrical and Electronic Engineering and 3 papers in Materials Chemistry. Recurrent topics in R. Castagné's work include Advancements in Semiconductor Devices and Circuit Design (10 papers), Semiconductor materials and devices (10 papers) and Semiconductor Quantum Structures and Devices (6 papers). R. Castagné is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (10 papers), Semiconductor materials and devices (10 papers) and Semiconductor Quantum Structures and Devices (6 papers). R. Castagné collaborates with scholars based in France and United States. R. Castagné's co-authors include A. Vapaille, P. Hesto, C. Arnodo, M. Mouis, S. Laval, Jean-Luc Pélouard, Harold U. Baranger, C. Bru and Philippe Dollfus and has published in prestigious journals such as Applied Physics Letters, Surface Science and IEEE Transactions on Electron Devices.

In The Last Decade

R. Castagné

21 papers receiving 566 citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements

1971 444 citations R. Castagné, A. Vapaille Surface Science profile →

Peers

Countries citing papers authored by R. Castagné

Since Specialization

Citations

This map shows the geographic impact of R. Castagné's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Castagné with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Castagné more than expected).

Fields of papers citing papers by R. Castagné

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Castagné. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Castagné. The network helps show where R. Castagné may publish in the future.

Co-authorship network of co-authors of R. Castagné

This figure shows the co-authorship network connecting the top 25 collaborators of R. Castagné. A scholar is included among the top collaborators of R. Castagné based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Castagné. R. Castagné is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Circuits intégrés en arséniure de gallium. Physique, technologie et règles de conception 1990 ·Annals of Telecommunications ·R. Castagné, (unknown), (unknown), (unknown), (unknown)	2
2	Etude Monte-Carlo du transport dans un gaz d'électrons bidimensionnel dégénéré 1989 ·Revue de Physique Appliquée ·M. Mouis, Philippe Dollfus, R. Castagné	3
3	Dimensionnement et performances potentielles des MISFET à hétérojonction 1989 ·Revue de Physique Appliquée ·Philippe Dollfus, M. Mouis, R. Castagné	1
4	Monte-Carlo Study Of Ballistic Transport In Heterojunction Bipolar Transistors (HJBTs) And In High Electron Mobility Transistors (HEMTs) 1988 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown), R. Castagné, P. Hesto	1
5	REAL-SPACE TRANSFER IN HETEROJUNCTION FET's : MONTE-CARLO SIMULATION AND ANALYTICAL MODEL 1988 ·Le Journal de Physique Colloques ·M. Mouis, (unknown), (unknown), R. Castagné	5
6	Monte-Carlo study of the double heterojunction bipolar transistor 1988 ·Solid-State Electronics ·Jean-Luc Pélouard, P. Hesto, R. Castagné	3
7	Ballistic peaks in the distribution function from intervalley transfer in a submicron structure 1987 ·Applied Physics Letters ·Harold U. Baranger, Jean-Luc Pélouard, (unknown), R. Castagné	7
8	Proceedings of the International Conference on Microlithography on Microcircuit Engineering 87 1987 ·R. Castagné	0
9	Physics and modelling of hot electron effects in submicron devices 1985 ·Physica B+C ·R. Castagné	6
10	2-D particle modelling of the InP MISFET 1984 ·Solid-State Electronics ·M. Mouis, (unknown), R. Castagné	3
11	Nonelastic acoustic-phonon-electron interactions in Monte-Carlo simulations at low fields 1984 ·Applied Physics Letters ·(unknown), Jean-Luc Pélouard, R. Castagné, (unknown)	2
12	A proposal and numerical simulation of N+N N+ Schottky device for ballistic and quasiballistic electron spectroscopy 1982 ·Applied Physics Letters ·P. Hesto, (unknown), R. Castagné	14
13	Two-dimensional particle modeling of submicrometer gate GaAs FET's near pinchoff 1982 ·IEEE Transactions on Electron Devices ·(unknown), R. Castagné, (unknown), C. Arnodo	19
14	Velocity overshoot investigations in sub-micron GaAs devices by photoconduction experiments 1980 ·S. Laval, C. Bru, C. Arnodo, R. Castagné	2
15	Theoretical model for a microsctip optoelectronic switch 1977 ·Electronics Letters ·(unknown), R. Castagné, (unknown), S. Laval	2
16	Picosecond 1-wavelength optoelectronic gate 1976 ·Electronics Letters ·R. Castagné, S. Laval, (unknown)	10
17	Surface conductivity of the insulator of an MIS or MIM device 1973 ·Thin Solid Films ·R. Castagné, P. Hesto, A. Vapaille	17
18	Aspects particuliers des courbes C(V) et de la densite apparente d'etats a l'interface SiO2 thermique — Si des structures mos d'orientation superficielle 〈111〉. 1971 ·Solid State Communications ·R. Castagné, A. Vapaille	1
19	Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements breakdown → 1971 ·Surface Science ·R. Castagné, A. Vapaille	444
20	Apparent interface state density introduced by the spatial fluctuations of surface potential in an m.o.s. structure 1970 ·Electronics Letters ·R. Castagné, A. Vapaille	39

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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