C. Chassat

523 total citations
15 papers, 404 citations indexed

About

C. Chassat is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, C. Chassat has authored 15 papers receiving a total of 404 indexed citations (citations by other indexed papers that have themselves been cited), including 8 papers in Materials Chemistry, 7 papers in Electrical and Electronic Engineering and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in C. Chassat's work include Graphene research and applications (8 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Thermal properties of materials (5 papers). C. Chassat is often cited by papers focused on Graphene research and applications (8 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Thermal properties of materials (5 papers). C. Chassat collaborates with scholars based in France, Vietnam and Italy. C. Chassat's co-authors include Jérôme Saint-Martin, Philippe Dollfus, Việt Hùng Nguyễn, Arnaud Bournel, Y. Apertet, Charles Caër, V. Aubry-Fortuna, Damien Querlioz, S. Galdin‐Retailleau and Karim Huet and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

C. Chassat

14 papers receiving 396 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Chassat France 8 266 192 97 43 27 15 404
Demetrio Logoteta Italy 11 228 0.9× 186 1.0× 124 1.3× 45 1.0× 17 0.6× 31 331
Reto Rhyner Switzerland 10 190 0.7× 240 1.3× 54 0.6× 101 2.3× 15 0.6× 18 320
François Gibelli France 4 71 0.3× 114 0.6× 73 0.8× 32 0.7× 19 0.7× 8 146
Jacob J. Becker United States 7 194 0.7× 314 1.6× 81 0.8× 46 1.1× 10 0.4× 21 330
Joanna Kutrowska-Girzycka Poland 10 325 1.2× 267 1.4× 72 0.7× 50 1.2× 7 0.3× 15 378
G.B. Lush United States 13 210 0.8× 336 1.8× 173 1.8× 37 0.9× 10 0.4× 25 375
Matsuto Ogawa Japan 13 263 1.0× 329 1.7× 176 1.8× 111 2.6× 9 0.3× 55 502
Amaury Delamarre France 9 140 0.5× 264 1.4× 101 1.0× 42 1.0× 9 0.3× 41 296
Hui Pan China 10 306 1.2× 101 0.5× 78 0.8× 14 0.3× 24 0.9× 16 336
Zachary S. Bittner United States 10 153 0.6× 241 1.3× 234 2.4× 67 1.6× 7 0.3× 32 307

Countries citing papers authored by C. Chassat

Since Specialization
Citations

This map shows the geographic impact of C. Chassat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Chassat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Chassat more than expected).

Fields of papers citing papers by C. Chassat

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Chassat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Chassat. The network helps show where C. Chassat may publish in the future.

Co-authorship network of co-authors of C. Chassat

This figure shows the co-authorship network connecting the top 25 collaborators of C. Chassat. A scholar is included among the top collaborators of C. Chassat based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Chassat. C. Chassat is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Nguyễn, Việt Hùng, Damien Querlioz, Jérôme Saint-Martin, et al.. (2013). Graphene nanomesh transistor with high on/off ratio and good saturation behavior. Applied Physics Letters. 103(18). 32 indexed citations
2.
Saint-Martin, Jérôme, et al.. (2012). Thermoelectric performance of disordered and nanostructured graphene ribbons using Green’s function method. Journal of Computational Electronics. 11(1). 67–77. 28 indexed citations
3.
Valentin, A., et al.. (2011). Edge effects on phonon dispersion and density-of-states of graphene nanoribbons and nanoflakes. Chinese Journal of Physics. 49(1). 31–40. 2 indexed citations
4.
Saint-Martin, Jérôme, et al.. (2011). Nanostructuration of Graphene Nanoribbons for thermoelectric applications. 22. 223–226. 1 indexed citations
5.
Aubry-Fortuna, V., et al.. (2011). MONTE CARLO SIMULATION OF GIANT PIEZORESISTANCE EFFECT IN p-TYPE SILICON NANOSTRUCTURES. Modern Physics Letters B. 25(12n13). 995–1001. 12 indexed citations
6.
Saint-Martin, Jérôme, et al.. (2011). Edge shape effect on vibrational modes in graphene nanoribbons: A numerical study. Journal of Applied Physics. 109(6). 27 indexed citations
7.
Nguyễn, Việt Hùng, Y. Apertet, Charles Caër, et al.. (2011). Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons. Physical Review B. 83(23). 159 indexed citations
8.
Nguyễn, Việt Hùng, Arnaud Bournel, C. Chassat, & Philippe Dollfus. (2010). Quantum transport of Dirac fermions in graphene field effect transistors. 9–12. 14 indexed citations
9.
Aubry-Fortuna, V., et al.. (2010). Giant piezoresistance effect in p-type silicon. 321–324.
10.
Nguyễn, Việt Hùng, V. Nam, Charles Caër, et al.. (2010). Phonon and electron transport in graphene nanoribbons. 1–4. 1 indexed citations
11.
Querlioz, Damien, Jérôme Saint-Martin, Karim Huet, et al.. (2007). On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation. IEEE Transactions on Electron Devices. 54(9). 2232–2242. 65 indexed citations
12.
Huet, Karim, et al.. (2007). Full band Monte Carlo study of ballistic effects in nanometer‐scaled strained P channel Double Gate MOSFETs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(1). 43–46. 5 indexed citations
13.
Saint-Martin, Jérôme, et al.. (2006). Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas. Semiconductor Science and Technology. 21(4). L29–L31. 46 indexed citations
14.
Saint-Martin, Jérôme, et al.. (2006). Monte Carlo simulation of double gate MOSFET including multi sub-band description. Journal of Computational Electronics. 5(4). 439–442. 7 indexed citations
15.
Saint-Martin, Jérôme, et al.. (2004). Influence of Ballistic Effects in Ultra-Small MOSFETs. Journal of Computational Electronics. 3(3-4). 207–210. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026