K. L. Hess

571 total citations
22 papers, 413 citations indexed

About

K. L. Hess is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, K. L. Hess has authored 22 papers receiving a total of 413 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Atomic and Molecular Physics, and Optics, 19 papers in Electrical and Electronic Engineering and 2 papers in Materials Chemistry. Recurrent topics in K. L. Hess's work include Semiconductor Quantum Structures and Devices (18 papers), Semiconductor Lasers and Optical Devices (11 papers) and Photonic and Optical Devices (9 papers). K. L. Hess is often cited by papers focused on Semiconductor Quantum Structures and Devices (18 papers), Semiconductor Lasers and Optical Devices (11 papers) and Photonic and Optical Devices (9 papers). K. L. Hess collaborates with scholars based in United States, Australia and United Kingdom. K. L. Hess's co-authors include H. M. Manasevit, T. S. Low, P.D. Dapkus, G. E. Stillman, Slava V. Rotkin, Wood-Hi Cheng, Daniel Renner, D. Kasemset, Raffaele Riccio and S.J.C. Irvine and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

K. L. Hess

22 papers receiving 376 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. L. Hess United States 10 332 315 104 56 41 22 413
R. S. Sillmon United States 9 282 0.8× 282 0.9× 90 0.9× 57 1.0× 31 0.8× 18 389
C. Anayama Japan 11 303 0.9× 295 0.9× 71 0.7× 73 1.3× 40 1.0× 25 378
T. Katsuyama Japan 13 433 1.3× 352 1.1× 84 0.8× 42 0.8× 48 1.2× 44 492
Seiji Kawata Japan 9 305 0.9× 362 1.1× 177 1.7× 51 0.9× 30 0.7× 11 420
V. G. Mokerov Russia 11 234 0.7× 253 0.8× 89 0.9× 77 1.4× 31 0.8× 76 350
Tonao Yuasa Japan 12 374 1.1× 378 1.2× 89 0.9× 49 0.9× 34 0.8× 20 461
Koichi Kamon Japan 11 306 0.9× 285 0.9× 91 0.9× 116 2.1× 37 0.9× 15 380
T. Kikawa Japan 12 364 1.1× 276 0.9× 106 1.0× 48 0.9× 40 1.0× 28 438
K. Mochizuki Japan 10 304 0.9× 285 0.9× 150 1.4× 71 1.3× 35 0.9× 12 375
M. Hovinen United States 11 399 1.2× 388 1.2× 149 1.4× 65 1.2× 31 0.8× 30 453

Countries citing papers authored by K. L. Hess

Since Specialization
Citations

This map shows the geographic impact of K. L. Hess's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. L. Hess with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. L. Hess more than expected).

Fields of papers citing papers by K. L. Hess

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. L. Hess. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. L. Hess. The network helps show where K. L. Hess may publish in the future.

Co-authorship network of co-authors of K. L. Hess

This figure shows the co-authorship network connecting the top 25 collaborators of K. L. Hess. A scholar is included among the top collaborators of K. L. Hess based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. L. Hess. K. L. Hess is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rotkin, Slava V. & K. L. Hess. (2004). Possibility of a metallic field-effect transistor. Applied Physics Letters. 84(16). 3139–3141. 40 indexed citations
2.
Stafford, Anne, S.J.C. Irvine, K. L. Hess, & J. Bajaj. (1999). Insights into MOCVD process control as revealed by laser interferometry. Journal of Electronic Materials. 28(6). 712–717. 4 indexed citations
3.
Stafford, Anne, S.J.C. Irvine, K. L. Hess, & J. Bajaj. (1998). The use ofin situlaser interferometry for MOCVD process control. Semiconductor Science and Technology. 13(12). 1407–1411. 19 indexed citations
4.
Grupen, Matt & K. L. Hess. (1998). The Coupled Optoelectronic Problems of Quantum WellLaser Operation. VLSI design. 6(1-4). 355–362. 3 indexed citations
5.
Cheng, Wood-Hi, Shuan-Yu Huang, A. Appelbaum, et al.. (1989). Wide-band modulation of 1.3 mu m InGaAsP buried crescent lasers with iron- and cobalt-doped semi-insulating current blocking layers. IEEE Journal of Quantum Electronics. 25(6). 1353–1361. 19 indexed citations
6.
Huang, Shuan-Yu, et al.. (1989). High Speed 1.31µm InGaAsP Lasers With Semi-Insulating Current-Blocking Layers: Experiment And Modeling. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 995. 2–2. 2 indexed citations
7.
Hess, K. L., et al.. (1988). Semi-insulating cobalt doped indium phosphide grown by MOCVD. Journal of Crystal Growth. 93(1-4). 576–582. 6 indexed citations
8.
Cheng, Wood-Hi, et al.. (1988). Dynamic characteristics of semi-insulating current blocking layers: Application to modulation performance of 1.3-μm InGaAsP lasers. Journal of Applied Physics. 64(3). 1570–1573. 7 indexed citations
9.
Cheng, Wood-Hi, Shuan-Yu Huang, A. Appelbaum, et al.. (1988). 1.3 μm InGaAsP buried crescent lasers with cobalt-doped semi-insulating current blocking layers grown by metalorganic chemical vapor deposition. Applied Physics Letters. 53(14). 1257–1259. 4 indexed citations
10.
Hess, K. L., et al.. (1987). Semi-insulating InP grown by low pressure MOCVD. Journal of Electronic Materials. 16(2). 127–131. 19 indexed citations
11.
Pan, N., et al.. (1987). Neutron transmutation doping of high-purity InP. Journal of Applied Physics. 62(3). 1129–1132. 9 indexed citations
12.
Cheng, Wood-Hi, C. B. Su, Shuan-Yu Huang, et al.. (1987). High-speed and high-power 1.3-μm InGaAsP buried crescent injection lasers with semi-insulating current blocking layers. Applied Physics Letters. 51(22). 1783–1785. 14 indexed citations
13.
Cheng, Wood-Hi, et al.. (1987). Low-threshold and wide-bandwidth 1.3 μm InGaAsP buried crescent injection lasers with semi-insulating current confinement layers. Applied Physics Letters. 51(3). 155–157. 9 indexed citations
14.
Hess, K. L. & Raffaele Riccio. (1986). Integrated safety system for MOCVD laboratory. Journal of Crystal Growth. 77(1-3). 95–100. 12 indexed citations
15.
Pudensi, M. A. A., K. Mohammed, J. L. Merz, D. Kasemset, & K. L. Hess. (1985). Effects of growth temperature on optical and deep level spectroscopy of high-quality InP grown by metalorganic chemical vapor deposition. Journal of Applied Physics. 57(8). 2788–2792. 7 indexed citations
16.
Kasemset, D., K. L. Hess, K. Mohammed, & J. L. Merz. (1984). The effects of V/III ratio and growth temperature on the electrical and optical properties of InP grown by low-pressure metalorganic chemical vapor deposition. Journal of Electronic Materials. 13(4). 655–671. 10 indexed citations
17.
Hess, K. L., D. Kasemset, & P.D. Dapkus. (1984). Growth and characterization of Ga1−xInxAs by low pressure metalorganic chemical vapor deposition. Journal of Electronic Materials. 13(5). 779–798. 9 indexed citations
18.
Hess, K. L., P.D. Dapkus, H. M. Manasevit, et al.. (1982). An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium. Journal of Electronic Materials. 11(6). 1115–1137. 28 indexed citations
19.
Dapkus, P.D., H. M. Manasevit, K. L. Hess, T. S. Low, & G. E. Stillman. (1981). High purity GaAs prepared from trimethylgallium and arsine. Journal of Crystal Growth. 55(1). 10–23. 150 indexed citations
20.
Manasevit, H. M. & K. L. Hess. (1979). The Use of Metalorganics in the Preparation of Semiconductor Materials: VII . Gallium Antimonide. Journal of The Electrochemical Society. 126(11). 2031–2033. 29 indexed citations

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