F. Reinhardt

2.1k total citations
57 papers, 1.6k citations indexed

About

F. Reinhardt is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, F. Reinhardt has authored 57 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Atomic and Molecular Physics, and Optics, 39 papers in Electrical and Electronic Engineering and 15 papers in Materials Chemistry. Recurrent topics in F. Reinhardt's work include Semiconductor Quantum Structures and Devices (42 papers), Semiconductor Lasers and Optical Devices (13 papers) and GaN-based semiconductor devices and materials (10 papers). F. Reinhardt is often cited by papers focused on Semiconductor Quantum Structures and Devices (42 papers), Semiconductor Lasers and Optical Devices (13 papers) and GaN-based semiconductor devices and materials (10 papers). F. Reinhardt collaborates with scholars based in Switzerland, Germany and United States. F. Reinhardt's co-authors include Anders Gustafsson, E. Kapon, E. Kapon, G. Biasiol, D. Y. Oberli, S.G. Spruytte, G. S. Higashi, Brendan M. Kayes, Hui Nie and I.C. Kizilyalli and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

F. Reinhardt

56 papers receiving 1.6k citations

Peers

F. Reinhardt
Ilsin An South Korea
Tongtong Zhu United Kingdom
P. Offermans Netherlands
D. J. Mowbray United Kingdom
F. Reinhardt
Citations per year, relative to F. Reinhardt F. Reinhardt (= 1×) peers V. A. Kotov

Countries citing papers authored by F. Reinhardt

Since Specialization
Citations

This map shows the geographic impact of F. Reinhardt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Reinhardt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Reinhardt more than expected).

Fields of papers citing papers by F. Reinhardt

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Reinhardt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Reinhardt. The network helps show where F. Reinhardt may publish in the future.

Co-authorship network of co-authors of F. Reinhardt

This figure shows the co-authorship network connecting the top 25 collaborators of F. Reinhardt. A scholar is included among the top collaborators of F. Reinhardt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Reinhardt. F. Reinhardt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Reinhardt, F., Stanislav Kopřiva, Oliver Trentmann, et al.. (2023). Chloroplasts lacking class I glutaredoxins are functional but show a delayed recovery of protein cysteinyl redox state after oxidative challenge. Redox Biology. 69. 103015–103015. 5 indexed citations
2.
Rodrigues, Cristina Martins, Isabel Keller, Wolfgang Zierer, et al.. (2020). Vernalization Alters Sink and Source Identities and Reverses Phloem Translocation from Taproots to Shoots in Sugar Beet. The Plant Cell. 32(10). 3206–3223. 39 indexed citations
3.
Kayes, Brendan M., Hui Nie, S.G. Spruytte, et al.. (2011). 27.6% Conversion efficiency, a new record for single-junction solar cells under 1 sun illumination. 4–8. 352 indexed citations
4.
Li, Hanxuan, F. Reinhardt, Chia‐Hung Chen, et al.. (2007). Next-generation high-power, high-efficiency diode lasers at Spectra-Physics. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6824. 68240S–68240S. 2 indexed citations
5.
Li, Hanxuan, et al.. (2007). Ongoing development of high-efficiency and high-reliability laser diodes at Spectra-Physics. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6456. 64560C–64560C. 7 indexed citations
6.
Li, Hanxuan, et al.. (2003). Carbon auto-doped AlGaAs/GaAs quantum well lasers. Journal of Crystal Growth. 256(1-2). 52–55. 7 indexed citations
7.
Li, Hanxuan, et al.. (2003). Reliable high-efficiency high-brightness laser diode bars at. Optics & Laser Technology. 36(4). 327–329. 9 indexed citations
8.
Toda, Tatsuki, F. Reinhardt, E. Martinet, E. Kapon, & Yoshiaki Nakano. (2002). Fabrication of InGaAs/GaAs DFB quantum wire lasers using V-grooved substrates. 349–352.
9.
Kapon, E., F. Reinhardt, G. Biasiol, & Anders Gustafsson. (1998). Surface and interface properties of quantum nanostructures grown on nonplanar substrates. Applied Surface Science. 123-124. 674–681. 13 indexed citations
10.
Hartmann, A., et al.. (1997). Self-limiting growth of quantum dot heterostructures on nonplanar {111}B substrates. Applied Physics Letters. 71(10). 1314–1316. 68 indexed citations
11.
Biasiol, G., E. Martinet, F. Reinhardt, Anders Gustafsson, & E. Kapon. (1997). Low-pressure OMCVD growth of AlGaAs vertical quantum wells on non-planar substrates. Journal of Crystal Growth. 170(1-4). 600–604. 9 indexed citations
12.
Biasiol, G., F. Reinhardt, Anders Gustafsson, & E. Kapon. (1997). Self-limiting OMCVD growth of GaAs on V-grooved substrates with application to InGaAs/GaAs quantum wires. Journal of Electronic Materials. 26(10). 1194–1198. 19 indexed citations
13.
Reinhardt, F., B. Dwir, & E. Kapon. (1996). Oxidation of GaAs/AlGaAs heterostructures studied by atomic force microscopy in air. Applied Physics Letters. 68(22). 3168–3170. 34 indexed citations
14.
Reinhardt, F., et al.. (1995). Monolayer resolved monitoring of AlAs growth with metalorganic molecular beam epitaxy by reflectance anisotropy spectroscopy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(1). 88–91. 12 indexed citations
15.
Woolf, D. A., K. C. Rose, D.I. Westwood, et al.. (1995). Reflectance anisotropy spectroscopy and reflection high-energy electron diffraction of submonolayer coverages of Si grown on GaAs(001) by molecular-beam epitaxy. Physical review. B, Condensed matter. 51(7). 4691–4694. 22 indexed citations
17.
Zorn, M., J. Jönsson, A. Krost, et al.. (1994). In-situ reflectance anisotropy studies of ternary III–V surfaces and growth of heterostructures. Journal of Crystal Growth. 145(1-4). 53–60. 25 indexed citations
18.
Jönsson, J., et al.. (1994). In situ time-resolved monitoring of PH3 induced exchange reactions on GaAs under metalorganic vapor phase epitaxy conditions. Applied Physics Letters. 64(15). 1998–2000. 34 indexed citations
19.
Reinhardt, F., et al.. (1993). Hydrogen-terminated Si(100) surfaces investigated by reflectance anisotropy spectroscopy. Thin Solid Films. 233(1-2). 19–23. 13 indexed citations
20.
Grützmacher, Detlev, et al.. (1990). Mode of growth in LP-MOVPE deposition of GalnAs/lnP quantum wells. Journal of Electronic Materials. 19(5). 471–479. 46 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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