V. G. Mokerov

447 total citations
76 papers, 350 citations indexed

About

V. G. Mokerov is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, V. G. Mokerov has authored 76 papers receiving a total of 350 indexed citations (citations by other indexed papers that have themselves been cited), including 66 papers in Atomic and Molecular Physics, and Optics, 43 papers in Electrical and Electronic Engineering and 21 papers in Materials Chemistry. Recurrent topics in V. G. Mokerov's work include Semiconductor Quantum Structures and Devices (55 papers), Quantum and electron transport phenomena (23 papers) and Advanced Semiconductor Detectors and Materials (16 papers). V. G. Mokerov is often cited by papers focused on Semiconductor Quantum Structures and Devices (55 papers), Quantum and electron transport phenomena (23 papers) and Advanced Semiconductor Detectors and Materials (16 papers). V. G. Mokerov collaborates with scholars based in Russia, Netherlands and Lithuania. V. G. Mokerov's co-authors include V. I. Trofimov, Г. Б. Галиев, Yu. V. Fedorov, И. С. Васильевский, J. Požėla, Р. М. Имамов, E. A. Klimov, V. A. Kulbachinskiı̆, A. de Visser and A. A. Cherechukin and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Surface Science.

In The Last Decade

V. G. Mokerov

72 papers receiving 320 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
V. G. Mokerov Russia	11	253	234	89	77	31	76	350
R. S. Sillmon United States	9	282 1.1×	282 1.2×	90 1.0×	57 0.7×	31 1.0×	18	389
M. B. M. Rinzan United States	12	201 0.8×	255 1.1×	71 0.8×	75 1.0×	64 2.1×	21	338
E. V. Nikitina Russia	14	294 1.2×	325 1.4×	87 1.0×	97 1.3×	75 2.4×	73	445
Z. Feit United States	10	182 0.7×	274 1.2×	167 1.9×	23 0.3×	39 1.3×	24	363
R. R. Saxena United States	11	253 1.0×	292 1.2×	124 1.4×	28 0.4×	58 1.9×	19	387
Yasuo Okuno Japan	12	392 1.5×	438 1.9×	213 2.4×	55 0.7×	28 0.9×	33	515
Janne Puustinen Finland	17	653 2.6×	540 2.3×	166 1.9×	129 1.7×	79 2.5×	64	747
V. Kolkovsky Poland	10	202 0.8×	189 0.8×	196 2.2×	59 0.8×	39 1.3×	34	362
Yu. A. Firsov Russia	13	303 1.2×	117 0.5×	124 1.4×	146 1.9×	53 1.7×	32	452
D. C. Walters United States	8	366 1.4×	345 1.5×	112 1.3×	74 1.0×	34 1.1×	17	456

Countries citing papers authored by V. G. Mokerov

Since Specialization

Citations

This map shows the geographic impact of V. G. Mokerov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. G. Mokerov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. G. Mokerov more than expected).

Fields of papers citing papers by V. G. Mokerov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. G. Mokerov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. G. Mokerov. The network helps show where V. G. Mokerov may publish in the future.

Co-authorship network of co-authors of V. G. Mokerov

This figure shows the co-authorship network connecting the top 25 collaborators of V. G. Mokerov. A scholar is included among the top collaborators of V. G. Mokerov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. G. Mokerov. V. G. Mokerov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Галиев, Г. Б., et al.. (2008). Nonstoichiometric defects in silicon-doped GaAs epilayers grown on (111)A-and (111)B-oriented substrates. Doklady Physics. 53(4). 187–191.

Галиев, Г. Б., et al.. (2008). Photoluminescence of Si-doped GaAs epitaxial layers. Semiconductors. 42(13). 1480–1486. 1 indexed citations

Kulbachinskiı̆, V. A., et al.. (2007). Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central A1As barrier.. Semiconductors. 22. 222–228. 1 indexed citations

Васильевский, И. С., et al.. (2007). Influence of state hybridization on low-temperature electron transport in shallow quantum wells. Journal of Experimental and Theoretical Physics. 105(1). 174–176. 2 indexed citations

Галиев, Г. Б., И. С. Васильевский, E. A. Klimov, V. G. Mokerov, & A. A. Cherechukin. (2006). The effect of spacer-layer growth temperature on mobility in a two-dimensional electron gas in PHEMT structures. Semiconductors. 40(12). 1445–1449. 20 indexed citations

Имамов, Р. М., et al.. (2005). Study of structural properties of InxGa1−xAs/InyAl1−yAs heterosystems on InP substrates. Crystallography Reports. 50(2). 320–326. 1 indexed citations

Галиев, Г. Б., et al.. (2002). Study of the effects of size quantization in coupled AlxGa1−x As/GaAs/Alx Ga1−x as quantum wells by means of photoreflectance spectroscopy. Optics and Spectroscopy. 93(6). 857–861. 5 indexed citations

Галиев, Г. Б., et al.. (1999). Photoluminescence studies of amphoteric silicon behavior in gallium arsenide. 44(8). 510–513.

Mokerov, V. G., et al.. (1998). Photoluminescence spectroscopy of quasi-two-dimensional electron gas in δ-doped GaAs(100) layers. Doklady Physics. 43(9). 527–530. 1 indexed citations

10.

Afanas’ev, A. M., А. А. Зайцев, Р. М. Имамов, et al.. (1998). X-ray diffraction study of interfaces between the layers of the AlAs-Ga 1 - x Al x As superlattice. Crystallography Reports. 43(1). 129–133. 1 indexed citations

11.

Afanas’ev, A. M., et al.. (1997). Study of multilayer GaAs-In x Ga 1 - x As layer-based structure by double-crystal x-ray diffractometry. Crystallography Reports. 42(3). 467–476. 5 indexed citations

12.

Mokerov, V. G., et al.. (1996). Optical properties of a two-dimensional electron gas in AlGaAs/GaAs heterostructures. Doklady Physics. 41(6). 250–252. 1 indexed citations

13.

Gubankov, V. N., et al.. (1995). Preparation of n + + GaAs-Nb contacts and their electrophysical properties at low temperatures. Technical Physics Letters. 21(3). 208–210.

14.

Trofimov, V. I., et al.. (1995). A generalized model of the growth kinetics on a vicinal surface in molecular-beam epitaxy. Doklady Physics. 40(9). 445–447.

15.

Mokerov, V. G., et al.. (1994). In x Ga 1-x As/GaAs量子井戸構造の光ルミネセンスの温度依存性. Semiconductors. 28(7). 691–694. 7 indexed citations

16.

Dolgopolov, V. T., et al.. (1991). Scaling under conditions of the integral quantum Hall effect. Journal of Experimental and Theoretical Physics. 72(1). 113–120. 4 indexed citations

17.

Nizhankovskiǐ, V. I., et al.. (1988). Chemical potential and g-factor of a 2D electron gas in a strong magnetic field. JETPL. 47. 343. 1 indexed citations

18.

Govorkov, S. A., et al.. (1987). Decay of magnetoplasma oscillations in 2D electron channel under quantum-Hall-effect conditions. JETPL. 45. 252. 1 indexed citations

19.

Галиев, Г. Б., et al.. (1978). Influence of deviations from the crystal lattice periodicity on the semiconductor--metal phase transition in vanadium dioxide. 2 indexed citations

20.

Valiev, K. A., Yu. V. Kopaev, V. G. Mokerov, & A. V. Rakov. (1971). Electron Structure and Phase Transitions in Lower Vanadium Oxides in an Electric Field. Journal of Experimental and Theoretical Physics. 33. 1168. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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