D. Z.

953 total citations
44 papers, 791 citations indexed

About

D. Z. is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, D. Z. has authored 44 papers receiving a total of 791 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 25 papers in Atomic and Molecular Physics, and Optics and 19 papers in Materials Chemistry. Recurrent topics in D. Z.'s work include Semiconductor materials and interfaces (25 papers), Semiconductor materials and devices (21 papers) and Silicon and Solar Cell Technologies (11 papers). D. Z. is often cited by papers focused on Semiconductor materials and interfaces (25 papers), Semiconductor materials and devices (21 papers) and Silicon and Solar Cell Technologies (11 papers). D. Z. collaborates with scholars based in Singapore, United States and France. D. Z.'s co-authors include H. F. Liu, Swee Liang Wong, S. J. Chua, Goutam Kumar Dalapati, S. J. Chua, Cheng Tan, N.L. Yakovlev, A. S. W. Wong, Hui Ru Tan and W.D. Wang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

D. Z.

44 papers receiving 772 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Z. Singapore 15 564 446 277 83 67 44 791
S. Koveshnikov United States 16 916 1.6× 250 0.6× 365 1.3× 42 0.5× 68 1.0× 83 1.0k
Barry O’Sullivan Belgium 15 970 1.7× 333 0.7× 188 0.7× 63 0.8× 99 1.5× 109 1.1k
Valdas Jokubavičius Sweden 15 535 0.9× 405 0.9× 114 0.4× 210 2.5× 70 1.0× 61 747
A. I. Dmitriev Ukraine 9 499 0.9× 719 1.6× 108 0.4× 91 1.1× 54 0.8× 35 815
Suresh Vishwanath United States 14 476 0.8× 751 1.7× 102 0.4× 90 1.1× 93 1.4× 19 883
J. Jadczak Poland 14 603 1.1× 815 1.8× 155 0.6× 63 0.8× 102 1.5× 34 920
Chinh Tam Le South Korea 17 361 0.6× 611 1.4× 196 0.7× 57 0.7× 133 2.0× 32 749
Xu-Qian Zheng United States 14 452 0.8× 534 1.2× 293 1.1× 152 1.8× 290 4.3× 41 832
M. Badylevich Belgium 11 395 0.7× 355 0.8× 171 0.6× 58 0.7× 75 1.1× 25 513
Wakana Takeuchi Japan 15 752 1.3× 541 1.2× 294 1.1× 90 1.1× 271 4.0× 87 1.1k

Countries citing papers authored by D. Z.

Since Specialization
Citations

This map shows the geographic impact of D. Z.'s research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Z. with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Z. more than expected).

Fields of papers citing papers by D. Z.

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Z.. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Z.. The network helps show where D. Z. may publish in the future.

Co-authorship network of co-authors of D. Z.

This figure shows the co-authorship network connecting the top 25 collaborators of D. Z.. A scholar is included among the top collaborators of D. Z. based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Z.. D. Z. is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mrkyvkova, Nada, Peter Nádaždy, Yuriy Halahovets, et al.. (2019). Diindenoperylene thin-film structure on MoS2 monolayer. Applied Physics Letters. 114(25). 13 indexed citations
2.
Zhu, Huili, Changjie Zhou, Baoshan Tang, et al.. (2018). Band alignment of 2D WS2/HfO2 interfaces from x-ray photoelectron spectroscopy and first-principles calculations. Applied Physics Letters. 112(17). 17 indexed citations
3.
Liu, H. F., Swee Liang Wong, & D. Z.. (2015). CVD Growth of MoS2‐based Two‐dimensional Materials. Chemical Vapor Deposition. 21(10-11-12). 241–259. 174 indexed citations
4.
5.
Mukherjee, C., Tanmoy Das, C. Mahata, et al.. (2014). Interface Properties of Atomic Layer Deposited TiO2/Al2O3 Films on In0.53Ga0.47As/InP Substrates. ACS Applied Materials & Interfaces. 6(5). 3263–3274. 25 indexed citations
6.
Liu, H. F., et al.. (2014). Epitaxial Synthesis, Band Offset, and Photoelectrochemical Properties of Cubic Ga2S3 Thin Films on GaAs (111) Substrates. ECS Solid State Letters. 3(11). P131–P135. 11 indexed citations
7.
Masudy‐Panah, Saeid, et al.. (2013). Impact of metal contact on the performance of cupric oxide based thin film solar cells. 378–380. 8 indexed citations
8.
Kumar, Avishek, Goutam Kumar Dalapati, Hui Ru Tan, et al.. (2013). Integration of β-FeSi2 with poly-Si on glass for thin-film photovoltaic applications. RSC Advances. 3(21). 7733–7733. 14 indexed citations
9.
Mahata, C., Mrinal K. Hota, Goutam Kumar Dalapati, et al.. (2011). Electrical Properties of SiGe MOS Capacitors with Ultrathin ALD Hafnium Dioxide. ECS Transactions. 35(3). 513–520. 2 indexed citations
10.
Das, Tanmoy, C. Mahata, C. K. Maiti, et al.. (2011). Sputter-Deposited La2O3on p-GaAs for Gate Dielectric Applications. Journal of The Electrochemical Society. 159(2). G15–G22. 28 indexed citations
11.
Wong, A. S. W., Ghim Wei Ho, & D. Z.. (2010). Understanding the Growth of β-FeSi[sub 2] Films for Photovoltaic Applications: A Study Using Transmission Electron Microscopy. Journal of The Electrochemical Society. 157(8). H847–H847. 2 indexed citations
12.
Feng, Yuan Ping, et al.. (2007). Mechanisms of silicon diffusion in erbium silicide. Physical Review B. 75(12). 4 indexed citations
13.
14.
Gao, Fei, S. J. Lee, Byung Jin Cho, et al.. (2006). SiGe on Insulator MOSFET Integrated with Schottky Source/Drain and HfO[sub 2]∕TaN Gate Stack. Electrochemical and Solid-State Letters. 9(7). G222–G222. 2 indexed citations
15.
Joo, Moon Sig, Byung Jin Cho, D. Z., N. Balasubramanian, & D. L. Kwong. (2004). Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process. 1 indexed citations
16.
Liu, Jin, K. L. Pey, Won Kook Choi, et al.. (2004). Study of Ge Out-diffusion During Nickel (Platinum ∼ 0, 5, 10 at.%) Germanosilicide Formation. MRS Proceedings. 810. 1 indexed citations
17.
Z., D., W.D. Wang, S. J. Chua, & S. Ashok. (2002). Reverse current transport mechanism in shallow junctions containing silicide spikes. Journal of Applied Physics. 92(12). 7532–7535. 8 indexed citations
18.
Lee, Pooi See, K. L. Pey, D. Mangelinck, et al.. (2002). Effect of Ion Implantation on Layer Inversion of Ni Silicided Poly-Si. Journal of The Electrochemical Society. 149(9). G505–G505. 7 indexed citations
19.
Wong, A. S. W., D. Z., M. E. Loomans, et al.. (2002). F-enhanced morphological and thermal stability of NiSi films on BF2+-implanted Si(001). Applied Physics Letters. 81(27). 5138–5140. 54 indexed citations
20.
Z., D., D. Mangelinck, Abu Samah Zuruzi, A. S. W. Wong, & S. K. Lahiri. (2001). Nickel silicide as a contact material for submicron CMOS devices. Journal of Electronic Materials. 30(12). 1483–1488. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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