Jong Kyung Park

530 total citations
16 papers, 428 citations indexed

About

Jong Kyung Park is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Jong Kyung Park has authored 16 papers receiving a total of 428 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 3 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Jong Kyung Park's work include Semiconductor materials and devices (10 papers), Advanced Memory and Neural Computing (7 papers) and Graphene research and applications (4 papers). Jong Kyung Park is often cited by papers focused on Semiconductor materials and devices (10 papers), Advanced Memory and Neural Computing (7 papers) and Graphene research and applications (4 papers). Jong Kyung Park collaborates with scholars based in South Korea. Jong Kyung Park's co-authors include Byung Jin Cho, Seung Min Song, Jeong Hun Mun, Seok-Hee Lee, Jae Sub Oh, Ki-Hong Lee, Sung Kyu Lim, Young-Min Park, Moon Sig Joo and Seul Ki Hong and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Scientific Reports.

In The Last Decade

Jong Kyung Park

10 papers receiving 419 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jong Kyung Park South Korea 6 308 276 101 90 40 16 428
Brian D. Sosnowchik United States 10 227 0.7× 216 0.8× 158 1.6× 72 0.8× 44 1.1× 21 384
A. Smirnov Belarus 10 206 0.7× 251 0.9× 117 1.2× 58 0.6× 51 1.3× 48 346
Conor Puls United States 6 352 1.1× 168 0.6× 103 1.0× 92 1.0× 34 0.8× 8 392
Mahmoud Chakaroun France 12 160 0.5× 321 1.2× 72 0.7× 85 0.9× 42 1.1× 43 391
Pyungho Choi South Korea 10 203 0.7× 292 1.1× 44 0.4× 47 0.5× 36 0.9× 43 380
Xiaoqing Chen China 8 561 1.8× 417 1.5× 198 2.0× 90 1.0× 73 1.8× 23 733
L. Mathew United States 17 319 1.0× 778 2.8× 225 2.2× 50 0.6× 27 0.7× 47 942
Marissa A. Caldwell United States 11 442 1.4× 388 1.4× 99 1.0× 38 0.4× 74 1.9× 16 505
Abdelkader Abderrahmane South Korea 11 378 1.2× 309 1.1× 86 0.9× 52 0.6× 60 1.5× 42 489

Countries citing papers authored by Jong Kyung Park

Since Specialization
Citations

This map shows the geographic impact of Jong Kyung Park's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jong Kyung Park with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jong Kyung Park more than expected).

Fields of papers citing papers by Jong Kyung Park

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jong Kyung Park. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jong Kyung Park. The network helps show where Jong Kyung Park may publish in the future.

Co-authorship network of co-authors of Jong Kyung Park

This figure shows the co-authorship network connecting the top 25 collaborators of Jong Kyung Park. A scholar is included among the top collaborators of Jong Kyung Park based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jong Kyung Park. Jong Kyung Park is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

16 of 16 papers shown
1.
Han, Hee, et al.. (2025). Influence of deposition conditions on ALD based Ru passivation for Cu-Cu hybrid bonding. Scientific Reports. 15(1). 36620–36620.
2.
Cho, Byung Jin, et al.. (2025). Improving cell current in 3D NAND flash memory with fixed oxide charge. Solid-State Electronics. 225. 109072–109072.
3.
Kim, Sarah Eunkyung, et al.. (2024). Analysis of Signal Transmission Efficiency in Semiconductor Interconnect and Proposal of Enhanced Structures. Micromachines. 15(10). 1207–1207. 1 indexed citations
4.
Park, Jong Kyung, et al.. (2024). Reducing Interface Resistance in Semiconductor System Through the Integration of Graphene. Electronics. 13(21). 4305–4305.
5.
Kim, Ji Hun, et al.. (2024). Unraveling diffusion behavior in Cu-to-Cu direct bonding with metal passivation layers. Scientific Reports. 14(1). 6665–6665. 9 indexed citations
6.
Lee, Seungwon, et al.. (2024). Analyzing the Influence of Source/Drain Growth Height and Lateral Growth Depth in FinFETs Through XGBoost and SHAP. IEEE Electron Device Letters. 45(10). 1714–1716.
7.
8.
Park, Jong Kyung, et al.. (2014). Improvement of the multi-level cell performance by a soft program method in flash memory devices. Solid-State Electronics. 94. 86–90.
9.
10.
Park, Jong Kyung, Seung Min Song, Jeong Hun Mun, & Byung Jin Cho. (2012). Dramatic improvement of high-k gate dielectric reliability by using mono-layer graphene gate electrode. 11. 31–32. 2 indexed citations
11.
Park, Jong Kyung, Dong‐Il Moon, Yang‐Kyu Choi, et al.. (2012). Origin of transient V<inf>th</inf> shift after erase and its impact on 2D/3D structure charge trap flash memory cell operations. 10 indexed citations
12.
Song, Seung Min, et al.. (2012). Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance. Nano Letters. 12(8). 3887–3892. 298 indexed citations
13.
Park, Jong Kyung, et al.. (2012). Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer. Applied Physics Express. 5(8). 81102–81102. 2 indexed citations
14.
Park, Jong Kyung, Seung Min Song, Jeong Hun Mun, & Byung Jin Cho. (2011). Graphene Gate Electrode for MOS Structure-Based Electronic Devices. Nano Letters. 11(12). 5383–5386. 59 indexed citations
15.
Park, Jong Kyung, Young-Min Park, Seok-Hee Lee, et al.. (2011). Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3Blocking Layer in Flash Memory Device. Japanese Journal of Applied Physics. 50(4S). 04DD07–04DD07. 5 indexed citations
16.
Park, Jong Kyung, Young-Min Park, Sung Kyu Lim, et al.. (2010). Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device. Applied Physics Letters. 96(22). 26 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026