Ronald A. Arif

2.1k total citations
40 papers, 1.8k citations indexed

About

Ronald A. Arif is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Ronald A. Arif has authored 40 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Condensed Matter Physics, 23 papers in Atomic and Molecular Physics, and Optics and 15 papers in Materials Chemistry. Recurrent topics in Ronald A. Arif's work include GaN-based semiconductor devices and materials (38 papers), Semiconductor Quantum Structures and Devices (21 papers) and Metal and Thin Film Mechanics (14 papers). Ronald A. Arif is often cited by papers focused on GaN-based semiconductor devices and materials (38 papers), Semiconductor Quantum Structures and Devices (21 papers) and Metal and Thin Film Mechanics (14 papers). Ronald A. Arif collaborates with scholars based in United States, United Kingdom and Belgium. Ronald A. Arif's co-authors include Nelson Tansu, Hongping Zhao, Yik‐Khoon Ee, Guangyu Liu, James F. Gilchrist, Pisist Kumnorkaew, Hua Tong, Jing Zhang, Muhammad Jamil and G. S. Huang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

Ronald A. Arif

40 papers receiving 1.8k citations

Peers

Ronald A. Arif
Yik‐Khoon Ee United States
A. Dussaigne France
Jin Seo Im Germany
S. A. Nikishin United States
Yoshiki Naoi Japan
E. Iliopoulos Greece
Michael D. Craven United States
Haruo Sunakawa Japan
Kazuyuki Tadatomo Japan
Tongjun Yu China
Yik‐Khoon Ee United States
Ronald A. Arif
Citations per year, relative to Ronald A. Arif Ronald A. Arif (= 1×) peers Yik‐Khoon Ee

Countries citing papers authored by Ronald A. Arif

Since Specialization
Citations

This map shows the geographic impact of Ronald A. Arif's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ronald A. Arif with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ronald A. Arif more than expected).

Fields of papers citing papers by Ronald A. Arif

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ronald A. Arif. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ronald A. Arif. The network helps show where Ronald A. Arif may publish in the future.

Co-authorship network of co-authors of Ronald A. Arif

This figure shows the co-authorship network connecting the top 25 collaborators of Ronald A. Arif. A scholar is included among the top collaborators of Ronald A. Arif based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ronald A. Arif. Ronald A. Arif is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lu, Jing, et al.. (2017). Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor. MRS Advances. 2(5). 329–334. 4 indexed citations
2.
Su, Jie, et al.. (2015). (Invited) Epitaxial III-Nitride Film Growth in a Single Wafer Rotating Disk MOCVD Reactor. ECS Transactions. 69(11). 73–95. 7 indexed citations
3.
Aleksiejūnas, R., Saulius Nargelas, K. Jarašiūnas, et al.. (2014). Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures. Applied Physics Letters. 104(2). 28 indexed citations
4.
Armour, E., et al.. (2013). Effect of Growth Pressure and Gas-Phase Chemistry on the Optical Quality of InGaN/GaN Multi-Quantum Wells. MRS Proceedings. 1538. 341–351. 3 indexed citations
5.
Zhao, Hongping, Guangyu Liu, Jing Zhang, Ronald A. Arif, & Nelson Tansu. (2013). Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes. Journal of Display Technology. 9(4). 212–225. 173 indexed citations
6.
Stokes, E. B., et al.. (2013). PL Spatial Variation in InGaN/GaN MQWs Studied by Confocal Microscopy and TRPL Spectroscopy. ECS Journal of Solid State Science and Technology. 2(11). R262–R266. 3 indexed citations
7.
Zhao, Hongping, Guangyu Liu, Ronald A. Arif, & Nelson Tansu. (2010). Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes. Solid-State Electronics. 54(10). 1119–1124. 183 indexed citations
8.
Ee, Yik‐Khoon, Pisist Kumnorkaew, Ronald A. Arif, et al.. (2009). Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures. Optics Express. 17(16). 13747–13747. 117 indexed citations
9.
Ee, Yik‐Khoon, Pisist Kumnorkaew, Hua Tong, et al.. (2009). Enhancement of light extraction efficiency of InGaN quantum well light-emitting diodes with polydimethylsiloxane concave microstructures. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7231. 72310U–72310U. 6 indexed citations
10.
Ee, Yik‐Khoon, Pisist Kumnorkaew, Ronald A. Arif, et al.. (2009). Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses. IEEE Journal of Selected Topics in Quantum Electronics. 15(4). 1218–1225. 108 indexed citations
11.
Zhao, Hongping, Guangyu Liu, Ronald A. Arif, & Nelson Tansu. (2009). Effect of current injection efficiency on efficiency-droop in InGaN quantum well light-emitting diodes. 1–2. 1 indexed citations
12.
Zhao, Hongping, Ronald A. Arif, & Nelson Tansu. (2008). Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers. Journal of Applied Physics. 104(4). 86 indexed citations
13.
Ee, Yik‐Khoon, Pisist Kumnorkaew, Hua Tong, et al.. (2008). Comparison of numerical modeling and experiments of InGaN quantum wells light-emitting diodes with SiO 2 /polystyrene microlens arrays. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6910. 69100M–69100M. 3 indexed citations
14.
Arif, Ronald A., Yik‐Khoon Ee, & Nelson Tansu. (2008). Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420–510 nm. physica status solidi (a). 205(1). 96–100. 9 indexed citations
15.
Zhao, Hongping, et al.. (2008). Optical gain and spontaneous emission of strain-compensated InGaN-AlGaN quantum wells including carrier screening effect. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6889. 688903–688903. 6 indexed citations
16.
Arif, Ronald A., Hongping Zhao, & Nelson Tansu. (2008). Type-II InGaN-GaNAs quantum wells for lasers applications. Applied Physics Letters. 92(1). 94 indexed citations
17.
Jamil, Muhammad, Ronald A. Arif, Yik‐Khoon Ee, et al.. (2008). MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates. physica status solidi (a). 205(7). 1619–1624. 29 indexed citations
18.
Tripathy, Suvranta K., Guibao Xu, Xiaodong Mu, et al.. (2008). Phonon-assisted ultraviolet anti-Stokes photoluminescence from GaN film grown on Si (111) substrate. Applied Physics Letters. 93(20). 12 indexed citations
19.
Ee, Yik‐Khoon, Hongping Zhao, Ronald A. Arif, Muhammad Jamil, & Nelson Tansu. (2007). Self-assembled InGaN quantum dots on GaN emitting at 520nm grown by metalorganic vapor-phase epitaxy. Journal of Crystal Growth. 310(7-9). 2320–2325. 37 indexed citations
20.
Arif, Ronald A. & Nelson Tansu. (2005). Interdiffused SbN-based Quantum Well on GaAs for 1300-1550 nm Diode Lasers. MRS Proceedings. 891. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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