Tongjun Yu

2.3k total citations
162 papers, 1.8k citations indexed

About

Tongjun Yu is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Tongjun Yu has authored 162 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 149 papers in Condensed Matter Physics, 77 papers in Materials Chemistry and 69 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Tongjun Yu's work include GaN-based semiconductor devices and materials (149 papers), ZnO doping and properties (70 papers) and Ga2O3 and related materials (67 papers). Tongjun Yu is often cited by papers focused on GaN-based semiconductor devices and materials (149 papers), ZnO doping and properties (70 papers) and Ga2O3 and related materials (67 papers). Tongjun Yu collaborates with scholars based in China, United States and United Kingdom. Tongjun Yu's co-authors include Guoyi Zhang, Zhizhong Chen, Bo Shen, Xiao Hu, Xiangning Kang, Fujun Xu, Huimin Lu, Chuanyu Jia, Z. X. Qin and Jiejun Wu and has published in prestigious journals such as Physical Review Letters, ACS Nano and Applied Physics Letters.

In The Last Decade

Tongjun Yu

154 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tongjun Yu China 23 1.4k 938 797 613 462 162 1.8k
Anna Mogilatenko Germany 22 1.0k 0.7× 726 0.8× 625 0.8× 549 0.9× 340 0.7× 109 1.5k
Kazuyuki Tadatomo Japan 19 1.8k 1.3× 944 1.0× 819 1.0× 694 1.1× 641 1.4× 122 2.0k
Ching‐Lien Hsiao Sweden 23 943 0.7× 908 1.0× 641 0.8× 415 0.7× 267 0.6× 99 1.5k
A. Dussaigne France 28 1.4k 1.0× 736 0.8× 627 0.8× 643 1.0× 680 1.5× 74 1.8k
C. Bayram United States 25 1.4k 1.0× 847 0.9× 752 0.9× 747 1.2× 588 1.3× 95 2.0k
H. Marchand United States 17 1.6k 1.1× 803 0.9× 818 1.0× 798 1.3× 621 1.3× 37 1.9k
Noritoshi Maeda Japan 23 1.6k 1.1× 704 0.8× 1.1k 1.4× 511 0.8× 261 0.6× 66 1.9k
Atsushi Yamaguchi Japan 18 1.6k 1.2× 801 0.9× 715 0.9× 729 1.2× 716 1.5× 82 2.0k
Jeffrey J. Figiel United States 25 1.4k 1.0× 729 0.8× 720 0.9× 820 1.3× 659 1.4× 52 2.0k
Benjamin Leung United States 21 933 0.7× 682 0.7× 598 0.8× 469 0.8× 319 0.7× 40 1.3k

Countries citing papers authored by Tongjun Yu

Since Specialization
Citations

This map shows the geographic impact of Tongjun Yu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tongjun Yu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tongjun Yu more than expected).

Fields of papers citing papers by Tongjun Yu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tongjun Yu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tongjun Yu. The network helps show where Tongjun Yu may publish in the future.

Co-authorship network of co-authors of Tongjun Yu

This figure shows the co-authorship network connecting the top 25 collaborators of Tongjun Yu. A scholar is included among the top collaborators of Tongjun Yu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tongjun Yu. Tongjun Yu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yang, Xuelin, Bin Chen, Zhenghao Chen, et al.. (2025). Atomistic Understanding of Dislocation Climb in Nitride Semiconductors: Role of Asymmetric Jogs. Physical Review Letters. 134(5). 56102–56102. 1 indexed citations
2.
Zhu, Xingyu, et al.. (2024). Oxygen reduction through specific surface area control of AlN powder for AlN single-crystal growth by physical vapor transport. Semiconductor Science and Technology. 39(2). 25006–25006. 4 indexed citations
3.
4.
5.
Wu, Jiejun, et al.. (2022). Crystalline orientation and anisotropy of semi-polar GaN films grown on m-sapphire substrate by hydride vapor phase epitaxy. Journal of Crystal Growth. 596. 126824–126824. 2 indexed citations
6.
7.
Feng, Yuxia, Huarui Sun, Xuelin Yang, et al.. (2021). High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer. Applied Physics Letters. 118(5). 19 indexed citations
8.
Wang, Hui, Junjie Shi, Zhizhong Chen, & Tongjun Yu. (2020). Manipulation of polarization characteristics in wurtzite ΙΙΙ-nitride nanowires for linearly polarized emission. Journal of Physics D Applied Physics. 53(46). 465108–465108. 1 indexed citations
9.
Long, Hao, et al.. (2020). Impact of carbon nanotube pattern layers on gallium nitride-based light emitting diodes. Semiconductor Science and Technology. 35(11). 115013–115013. 1 indexed citations
10.
Lu, Huimin, Tongjun Yu, & Jianping Wang. (2019). A compensation approach of LED nonlinearity based on efficiency evaluation in a visible light communication system. Japanese Journal of Applied Physics. 58(SC). SCCC13–SCCC13. 3 indexed citations
11.
Chen, Yifan, Zhizhong Chen, Junze Li, et al.. (2018). A study of GaN nucleation and coalescence in the initial growth stages on nanoscale patterned sapphire substrates via MOCVD. CrystEngComm. 20(42). 6811–6820. 29 indexed citations
12.
Chen, Zhizhong, Yulong Feng, Shuailong Zhang, et al.. (2017). Modification of far-field radiation pattern by shaping InGaN/GaN nanorods. Applied Physics Letters. 110(5). 4 indexed citations
13.
Chen, Zhizhong, Yulong Feng, Shufeng Li, et al.. (2016). The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays. Nanoscale Research Letters. 11(1). 340–340. 21 indexed citations
14.
Jiang, Shengxiang, Yulong Feng, Zhizhong Chen, et al.. (2016). Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography. Scientific Reports. 6(1). 21573–21573. 26 indexed citations
15.
Jia, Chuanyu, Tongjun Yu, Huimin Lu, et al.. (2013). Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs. Optics Express. 21(7). 8444–8444. 58 indexed citations
16.
Lu, Huimin, Tongjun Yu, Gangcheng Yuan, et al.. (2012). Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells. Optics Letters. 37(17). 3693–3693. 19 indexed citations
17.
Lu, Huimin, Tongjun Yu, Gangcheng Yuan, et al.. (2012). Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN Quantum Wells. Optics Express. 20(25). 27384–27384. 16 indexed citations
18.
Fu, Xingxing, Bei Zhang, Xiangning Kang, et al.. (2011). GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template. Optics Express. 19(S5). A1104–A1104. 41 indexed citations
19.
Wu, Jiejun, et al.. (2011). Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy. Chinese Physics B. 20(9). 98101–98101. 1 indexed citations
20.
Yang, Xuelin, Zhitao Chen, Yan Zhang, et al.. (2007). Raman scattering and ferromagnetism of (Ga, Mn)N films grown by MOCVD. Solid State Communications. 143(4-5). 236–239. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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