Min Hyuk Park

14.1k total citations · 5 hit papers
141 papers, 11.3k citations indexed

About

Min Hyuk Park is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Min Hyuk Park has authored 141 papers receiving a total of 11.3k indexed citations (citations by other indexed papers that have themselves been cited), including 132 papers in Electrical and Electronic Engineering, 120 papers in Materials Chemistry and 8 papers in Biomedical Engineering. Recurrent topics in Min Hyuk Park's work include Ferroelectric and Negative Capacitance Devices (120 papers), Semiconductor materials and devices (87 papers) and MXene and MAX Phase Materials (68 papers). Min Hyuk Park is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (120 papers), Semiconductor materials and devices (87 papers) and MXene and MAX Phase Materials (68 papers). Min Hyuk Park collaborates with scholars based in South Korea, Germany and United States. Min Hyuk Park's co-authors include Cheol Seong Hwang, Uwe Schroeder, Thomas Mikolajick, Han‐Joon Kim, Taehwan Moon, Young Hwan Lee, Keum Do Kim, Yu Jin Kim, Seung Dam Hyun and Woongkyu Lee and has published in prestigious journals such as Advanced Materials, Nature Communications and Nature Materials.

In The Last Decade

Min Hyuk Park

134 papers receiving 11.1k citations

Hit Papers

5 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films

2015 904 citations Min Hyuk Park, Young Hwan Lee et al. profile →
Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

2013 668 citations Min Hyuk Park, Han‐Joon Kim et al. profile →
Review and perspective on ferroelectric HfO2-based thin films for memory applications

2018 434 citations Min Hyuk Park, Young Hwan Lee et al. profile →
The fundamentals and applications of ferroelectric HfO2

2022 399 citations Uwe Schroeder, Min Hyuk Park et al. profile →
Next generation ferroelectric materials for semiconductor process integration and their applications

2021 291 citations Thomas Mikolajick, Stefan Slesazeck et al. Journal of Applied Physics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Min Hyuk Park South Korea	56	10.5k	9.0k	800	612	170	141	11.3k
U. Schröder Germany	30	7.5k 0.7×	5.6k 0.6×	314 0.4×	302 0.5×	147 0.9×	48	7.7k
Tony Schenk Germany	35	6.4k 0.6×	5.4k 0.6×	412 0.5×	287 0.5×	120 0.7×	67	6.8k
T. S. Böscke Germany	16	5.7k 0.5×	4.3k 0.5×	219 0.3×	173 0.3×	143 0.8×	27	5.8k
Mengwei Si United States	37	4.2k 0.4×	3.9k 0.4×	778 1.0×	1.1k 1.7×	329 1.9×	173	5.8k
Haidong Lu United States	34	2.8k 0.3×	4.0k 0.4×	1.1k 1.4×	1.3k 2.1×	364 2.1×	75	5.1k
Andrey M. Markeev Russia	29	2.3k 0.2×	1.8k 0.2×	271 0.3×	190 0.3×	118 0.7×	100	2.7k
Sang Hoon Chae South Korea	20	1.8k 0.2×	3.5k 0.4×	845 1.1×	380 0.6×	524 3.1×	47	4.1k
Rehan Kapadia United States	29	2.6k 0.2×	2.7k 0.3×	1.4k 1.8×	322 0.5×	683 4.0×	81	4.2k
Junpeng Lü China	35	2.4k 0.2×	2.9k 0.3×	670 0.8×	537 0.9×	444 2.6×	142	3.9k
Surabhi R. Madhvapathy United States	14	1.6k 0.2×	2.5k 0.3×	803 1.0×	195 0.3×	226 1.3×	19	3.1k

Countries citing papers authored by Min Hyuk Park

Since Specialization

Citations

This map shows the geographic impact of Min Hyuk Park's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Min Hyuk Park with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Min Hyuk Park more than expected).

Fields of papers citing papers by Min Hyuk Park

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Min Hyuk Park. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Min Hyuk Park. The network helps show where Min Hyuk Park may publish in the future.

Co-authorship network of co-authors of Min Hyuk Park

This figure shows the co-authorship network connecting the top 25 collaborators of Min Hyuk Park. A scholar is included among the top collaborators of Min Hyuk Park based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Min Hyuk Park. Min Hyuk Park is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

1.

Park, Ju Yong, Hyojun Choi, Jaewook Lee, et al.. (2025). Enhancement of electrical properties of morphotropic phase boundary in Hf1-xZrxO2 films by integrating Mo electrode and TiN interlayer for DRAM capacitors. Applied Surface Science Advances. 27. 100733–100733. 6 indexed citations

2.

Kim, Jae Joon, et al.. (2025). Recent Advances in Hafnium Oxide-Based Ferroelectric Thin-Film Transistors with Oxide Semiconductor Channels. Electronic Materials Letters.

3.

Yang, Kun, Hyun Woo Jeong, Jaewook Lee, et al.. (2025). Texture modulation of ferroelectric Hf0.5Zr0.5O2 thin films by engineering the polymorphism and texture of tungsten electrodes. Journal of Materiomics. 11(4). 101015–101015. 3 indexed citations

4.

Kim, Hyunjun, Huije Ryu, Hyun Woo Jeong, et al.. (2025). Vertical Stacking of Atomic-Layer-Deposited Oxide Layers via a Fluorinated Graphene Transfer Technique. ACS Nano. 19(25). 23186–23192. 1 indexed citations

5.

Lee, Won‐June, et al.. (2024). Non-centrosymmetric crystallization in ferroelectric hafnium zirconium oxide via photon-assisted defect modulation. Materials Science and Engineering R Reports. 159. 100800–100800. 1 indexed citations

6.

Lee, Dong Hyun, Ji Eun Kim, Yong Hyeon Cho, et al.. (2024). A fluorite-structured HfO₂/ZrO₂/HfO₂ superlattice based self-rectifying ferroelectric tunnel junction synapse. Materials Horizons. 11(21). 5251–5264. 5 indexed citations

7.

Lee, Jaewook, Hyojun Choi, Hyun Woo Jeong, et al.. (2024). Ferroelectricity of Hf_0.5Zr_0.5O₂ Thin Film Induced at 350°C by Thermally Accelerated Nucleation During Atomic Layer Deposition. IEEE Transactions on Electron Devices. 71(4). 2690–2695. 5 indexed citations

8.

Park, Min Hyuk, et al.. (2024). 2D materials-based crossbar array for neuromorphic computing hardware. SHILAP Revista de lepidopterología. 4(3). 32003–32003. 7 indexed citations

9.

Song, Myeong Seop, Hyung‐Jin Choi, Changhee Sohn, et al.. (2024). Atomic Layer Deposition of Epitaxial Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films. Advanced Functional Materials. 34(24). 12 indexed citations

10.

Lee, Young-Hwan, Hyun Woo Jeong, Se Hyun Kim, Kun Yang, & Min Hyuk Park. (2023). Effect of stress on fluorite-structured ferroelectric thin films for semiconductor devices. Materials Science in Semiconductor Processing. 160. 107411–107411. 25 indexed citations

11.

Lee, Jaewook, Kun Yang, Ji Eun Kim, et al.. (2023). Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide. Nano Convergence. 10(1). 55–55. 74 indexed citations

12.

Yang, Kun, Gi‐Yeop Kim, Gi‐Yeop Kim, et al.. (2023). Wake-up-mitigated giant ferroelectricity in Hf0.5Zr0.5O2 thin films through oxygen-providing, surface-oxidized W electrode. Materials Science in Semiconductor Processing. 164. 107565–107565. 26 indexed citations

13.

Lee, Young H., H. Alex Hsain, Dong Hyun Lee, et al.. (2022). The influence of crystallographic texture on structural and electrical properties in ferroelectric Hf0.5Zr0.5O2. Journal of Applied Physics. 132(24). 18 indexed citations

14.

Materano, Monica, Patrick D. Lomenzo, Alfred Kersch, et al.. (2021). Interplay between oxygen defects and dopants: effect on structure and performance of HfO₂-based ferroelectrics. Inorganic Chemistry Frontiers. 8(10). 2650–2672. 87 indexed citations

15.

Lee, Donghyun, et al.. (2020). A brief review on the effect of impurities on the atomic layer deposited fluorite-structure ferroelectrics. Journal of the Korean institute of surface engineering. 53(4). 169–181. 1 indexed citations

16.

Mittmann, Terence, Monica Materano, Patrick D. Lomenzo, et al.. (2019). Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering. Advanced Materials Interfaces. 6(20). 32 indexed citations

17.

Mittmann, Terence, Monica Materano, Patrick D. Lomenzo, et al.. (2019). Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering. Advanced Materials Interfaces. 6(11). 151 indexed citations

18.

Mikolajick, Thomas, Stefan Slesazeck, Min Hyuk Park, & Uwe Schroeder. (2018). Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors. MRS Bulletin. 43(5). 340–346. 258 indexed citations

19.

Kim, Yu Jin, Min Hyuk Park, Young Hwan Lee, et al.. (2016). Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure. Scientific Reports. 6(1). 19039–19039. 48 indexed citations

20.

Park, Min Hyuk, et al.. (2003). Increased Matrix Metalloproteinase-9 and Tissue Inhibitor of Metalloproteinase-1 Levels in the Cerebrospinal Fluid from Children with Aseptic Meningitis. Korean Journal of Pediatrics. 46(6). 548–553.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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