Benjamin Max

1.1k total citations
18 papers, 852 citations indexed

About

Benjamin Max is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, Benjamin Max has authored 18 papers receiving a total of 852 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 2 papers in Cellular and Molecular Neuroscience. Recurrent topics in Benjamin Max's work include Ferroelectric and Negative Capacitance Devices (16 papers), Advanced Memory and Neural Computing (12 papers) and Semiconductor materials and devices (7 papers). Benjamin Max is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (16 papers), Advanced Memory and Neural Computing (12 papers) and Semiconductor materials and devices (7 papers). Benjamin Max collaborates with scholars based in Germany, Italy and Romania. Benjamin Max's co-authors include Thomas Mikolajick, Stefan Slesazeck, Michael Hoffmann, Uwe Schroeder, Terence Mittmann, Franz P. G. Fengler, Raluca Negrea, L. Pintilie, Melanie Herzig and Halid Mulaosmanovic and has published in prestigious journals such as Nature, Journal of Applied Physics and Advanced Energy Materials.

In The Last Decade

Benjamin Max

18 papers receiving 840 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Benjamin Max Germany 13 763 522 62 56 27 18 852
Kati Kühnel Germany 18 1.1k 1.5× 735 1.4× 67 1.1× 37 0.7× 19 0.7× 49 1.2k
Youngin Goh South Korea 18 1.2k 1.6× 757 1.5× 70 1.1× 31 0.6× 36 1.3× 30 1.3k
David Lehninger Germany 19 1.2k 1.5× 771 1.5× 62 1.0× 28 0.5× 15 0.6× 85 1.2k
Sergei P. Stepanoff United States 12 345 0.5× 309 0.6× 78 1.3× 85 1.5× 28 1.0× 34 562
J. Ocker Germany 11 1.3k 1.8× 701 1.3× 50 0.8× 38 0.7× 44 1.6× 21 1.4k
S. Riedel Germany 13 1.5k 1.9× 1.1k 2.0× 60 1.0× 50 0.9× 12 0.4× 38 1.5k
Yicheng Tang China 9 271 0.4× 264 0.5× 79 1.3× 48 0.9× 52 1.9× 11 407
Zhongnan Xi China 11 326 0.4× 310 0.6× 60 1.0× 103 1.8× 27 1.0× 19 457
Raik Hoffmann Germany 20 1.9k 2.4× 1.0k 1.9× 86 1.4× 35 0.6× 41 1.5× 72 1.9k
Huan Tan Spain 16 433 0.6× 476 0.9× 30 0.5× 80 1.4× 13 0.5× 31 575

Countries citing papers authored by Benjamin Max

Since Specialization
Citations

This map shows the geographic impact of Benjamin Max's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Benjamin Max with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Benjamin Max more than expected).

Fields of papers citing papers by Benjamin Max

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Benjamin Max. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Benjamin Max. The network helps show where Benjamin Max may publish in the future.

Co-authorship network of co-authors of Benjamin Max

This figure shows the co-authorship network connecting the top 25 collaborators of Benjamin Max. A scholar is included among the top collaborators of Benjamin Max based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Benjamin Max. Benjamin Max is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Chavarin, Carlos Alvarado, Martin Knaut, Matthias Albert, et al.. (2023). High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Density. Advanced Electronic Materials. 10(2). 4 indexed citations
2.
Demirkol, Ahmet Şamil, et al.. (2023). A pseudo-memcapacitive neurotransistor for spiking neural networks. 1–5. 1 indexed citations
3.
Lancaster, Suzanne, Cláudia Silva, Benjamin Max, et al.. (2023). Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes. 1–2. 5 indexed citations
4.
Covi, Erika, Halid Mulaosmanovic, Benjamin Max, Stefan Slesazeck, & Thomas Mikolajick. (2022). Ferroelectric-based synapses and neurons for neuromorphic computing. Neuromorphic Computing and Engineering. 2(1). 12002–12002. 68 indexed citations
5.
Mulaosmanovic, Halid, Patrick D. Lomenzo, Uwe Schroeder, et al.. (2021). Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories. 1–6. 16 indexed citations
6.
Max, Benjamin, Michael Hoffmann, Stefan Slesazeck, & Thomas Mikolajick. (2020). Built‐in bias fields for retention stabilisation in hafnia‐based ferroelectric tunnel junctions. Electronics Letters. 56(21). 1108–1110. 9 indexed citations
7.
Lomenzo, Patrick D., Stefan Slesazeck, Michael Hoffmann, et al.. (2019). Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields. Qucosa (Saxon State and University Library Dresden). 1–8. 30 indexed citations
8.
Hoffmann, Michael, Franz P. G. Fengler, Melanie Herzig, et al.. (2019). Unveiling the double-well energy landscape in a ferroelectric layer. Nature. 565(7740). 464–467. 309 indexed citations
9.
Max, Benjamin, Thomas Mikolajick, Michael Hoffmann, & Stefan Slesazeck. (2019). Retention Characteristics of Hf0.5Zr0.5O2-Based Ferroelectric Tunnel Junctions. Qucosa (Saxon State and University Library Dresden). 1–4. 32 indexed citations
10.
Max, Benjamin, Michael Hoffmann, Stefan Slesazeck, & Thomas Mikolajick. (2019). Direct Correlation of Ferroelectric Properties and Memory Characteristics in Ferroelectric Tunnel Junctions. IEEE Journal of the Electron Devices Society. 7. 1175–1181. 90 indexed citations
11.
Mikolajick, Thomas, Uwe Schroeder, Patrick D. Lomenzo, et al.. (2019). Next Generation Ferroelectric Memories enabled by Hafnium Oxide. 15.5.1–15.5.4. 29 indexed citations
12.
Slesazeck, Stefan, Viktor Havel, Evelyn T. Breyer, et al.. (2019). Uniting The Trinity of Ferroelectric HfO2 Memory Devices in a Single Memory Cell. Qucosa (Saxon State and University Library Dresden). 19 indexed citations
13.
Hoffmann, Michael, Franz P. G. Fengler, Benjamin Max, et al.. (2019). Negative Capacitance for Electrostatic Supercapacitors. Advanced Energy Materials. 9(40). 62 indexed citations
14.
Max, Benjamin, J. San Juán, M.L. Nó, et al.. (2018). Atomic Species Associated with the Portevin–Le Chatelier Effect in Superalloy 718 Studied by Mechanical Spectroscopy. Metallurgical and Materials Transactions A. 49(6). 2057–2068. 19 indexed citations
15.
Hoffmann, Michael, Benjamin Max, Terence Mittmann, et al.. (2018). Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf>. Qucosa (Saxon State and University Library Dresden). 31.6.1–31.6.4. 50 indexed citations
16.
Max, Benjamin, Milan Pešić, Stefan Slesazeck, & Thomas Mikolajick. (2018). Interplay between ferroelectric and resistive switching in doped crystalline HfO2. Journal of Applied Physics. 123(13). 52 indexed citations
17.
Max, Benjamin, Michael Hoffmann, Stefan Slesazeck, & Thomas Mikolajick. (2018). Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf<inf>0.5</inf>Zr<inf>0.5</inf>.O<inf>2</inf>/ A1<inf>2</inf>O<inf>3</inf>Capacitor Stacks. Qucosa (Saxon State and University Library Dresden). 142–145. 55 indexed citations
18.
Lecce, Valerio Di, Michael Hoffmann, Halid Mulaosmanovic, et al.. (2017). Physical and circuit modeling of HfO<inf>2</inf> based ferroelectric memories and devices. IRIS UNIMORE (University of Modena and Reggio Emilia). 26. 1–4. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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