Michael D. Bremser

4.9k citations
78 papers · 4.3k · 2 hit papers · h-index 30

Impact in

Papers in

Michael D. Bremser

78 papers receiving 4.2k citations

Michael D. Bremser's Hit Papers

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy 1997 · 581 citations
5810+10+20Years since publication250500750

Peers

Michael D. Bremser
Comparison fields: 5 of 23
  • Condensed Matter Physics 3.5k
  • Atomic and Molecular Physics, and Optics 90
  • Materials Chemistry 130
  • Electrical and Electronic Engineering 129
  • Biomedical Engineering 70
Replace Ben Heying with:
Ben Heying United States
Okhyun Nam South Korea
A. Saxler United States
Sergey A. Nikishin United States
Patrick Waltereit Germany
Jinqiao Xie United States
Helmut Angerer Germany
Mim Lal Nakarmi United States
Arpan Chakraborty United States
E. Muñoz Spain
Michael D. Bremser relative to Ben Heying United States Ben Heying's profile →
Citations per field
00.5×1.5×2×2.3×
Ben Heying · 1×
Citations per year

Countries citing papers authored by Michael D. Bremser

Since Specialization
Citations

This map shows the geographic impact of Michael D. Bremser's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Michael D. Bremser with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Michael D. Bremser more than expected).

Fields of papers citing papers by Michael D. Bremser

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Michael D. Bremser. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Michael D. Bremser. The network helps show where Michael D. Bremser may publish in the future.

Co-authors

The 25 scholars most cited alongside Michael D. Bremser, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Michael D. Bremser Line = papers co-authored together Michael D. Bremser links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 78 papers — load more, or switch the sort, to bring in the rest.

#Work
1
Strain-related phenomena in GaN thin films
Hit paper breakdown →
1996803
2
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
Hit paper breakdown →
1997581
3 1997434
4 1998282
5 1995217
6 1997151
7 1996148
8 1997111
9 199891
10 199690
11 199684
12 199674
13 199767
14 199766
15 199660
16 199759
17 199655
18 199952
19 199651
20 199649

About Michael D. Bremser

Michael D. Bremser is a scholar working on Condensed Matter Physics, Biomedical Engineering, Atomic and Molecular Physics, and Optics, Nuclear Energy and Engineering and Waste Management and Disposal, having authored 78 papers that have together received 4.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (69 papers), Photocathodes and Microchannel Plates (3 papers) and Semiconductor materials and interfaces (2 papers). The work is most often cited by research in Condensed Matter Physics (3.5k citations), Atomic and Molecular Physics, and Optics (90 citations), Materials Chemistry (130 citations), Electrical and Electronic Engineering (129 citations) and Biomedical Engineering (70 citations). Michael D. Bremser has collaborated with scholars based in United States, Germany and Poland. Frequent co-authors include Robert F. Davis, Okhyun Nam, Tsvetanka S. Zheleva, William G. Perry, R. J. Nemanich, T. Suski, Sergei Ruvimov, E. R. Weber, Joel W. Ager and Martin Rubin. Their work appears in journals such as Applied Physics Letters, Journal of Electronic Materials, Journal of Applied Physics, Thin Solid Films and MRS Internet Journal of Nitride Semiconductor Research.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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