J. Vobecký

1.6k total citations
119 papers, 1.3k citations indexed

About

J. Vobecký is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Vobecký has authored 119 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 112 papers in Electrical and Electronic Engineering, 24 papers in Atomic and Molecular Physics, and Optics and 8 papers in Materials Chemistry. Recurrent topics in J. Vobecký's work include Silicon Carbide Semiconductor Technologies (76 papers), Silicon and Solar Cell Technologies (43 papers) and Semiconductor materials and devices (37 papers). J. Vobecký is often cited by papers focused on Silicon Carbide Semiconductor Technologies (76 papers), Silicon and Solar Cell Technologies (43 papers) and Semiconductor materials and devices (37 papers). J. Vobecký collaborates with scholars based in Czechia, Switzerland and United Kingdom. J. Vobecký's co-authors include P. Hazdra, Munaf Rahimo, K.D. Brand, A. Kopta, U. Schlapbach, Martin Arnold, Andrei Mihăilă, R. Schnell, Tobias Wikström and Hoi Jong Jung and has published in prestigious journals such as SHILAP Revista de lepidopterología, Journal of The Electrochemical Society and IEEE Transactions on Power Electronics.

In The Last Decade

J. Vobecký

111 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Vobecký Czechia	19	1.1k	224	99	72	69	119	1.3k
Kristie L. Cooper United States	16	1.1k 0.9×	358 1.6×	62 0.6×	84 1.2×	4 0.1×	43	1.2k
Cédric Hurth United States	12	190 0.2×	242 1.1×	92 0.9×	37 0.5×	8 0.1×	26	582
C. Kerbage United States	19	1.3k 1.2×	470 2.1×	58 0.6×	33 0.5×	8 0.1×	41	1.7k
A.M. Gundlach United Kingdom	12	302 0.3×	101 0.5×	26 0.3×	42 0.6×	30 0.4×	67	488
D. Misra United States	17	906 0.8×	134 0.6×	34 0.3×	252 3.5×	45 0.7×	132	1.0k
Norio Chiba Japan	15	384 0.3×	404 1.8×	41 0.4×	92 1.3×	19 0.3×	36	656
Andrea Firrincieli Belgium	13	444 0.4×	180 0.8×	18 0.2×	53 0.7×	88 1.3×	37	624
Ami Chand India	9	309 0.3×	537 2.4×	152 1.5×	98 1.4×	10 0.1×	19	773
F. Robin Switzerland	14	450 0.4×	420 1.9×	19 0.2×	64 0.9×	16 0.2×	56	718

Countries citing papers authored by J. Vobecký

Since Specialization

Citations

This map shows the geographic impact of J. Vobecký's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Vobecký with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Vobecký more than expected).

Fields of papers citing papers by J. Vobecký

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Vobecký. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Vobecký. The network helps show where J. Vobecký may publish in the future.

Co-authorship network of co-authors of J. Vobecký

This figure shows the co-authorship network connecting the top 25 collaborators of J. Vobecký. A scholar is included among the top collaborators of J. Vobecký based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Vobecký. J. Vobecký is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Vobecký, J., et al.. (2025). Two-Dimensional Device Simulation for the Design Optimization of a Bidirectional Phase Control Thyristor. IEEE Transactions on Electron Devices. 72(5). 2486–2491.

Reggiani, Susanna, et al.. (2021). Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes Over an Extended Temperature Range. IEEE Journal of the Electron Devices Society. 9. 431–440. 1 indexed citations

Reggiani, Susanna, et al.. (2020). TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation. IEEE Transactions on Electron Devices. 67(11). 4645–4648. 1 indexed citations

Vobecký, J.. (2020). The Bidirectional Phase Control Thyristor. IEEE Transactions on Electron Devices. 67(7). 2844–2849. 7 indexed citations

Reggiani, Susanna, et al.. (2019). TCAD Investigation of Differently Doped DLC Passivation for Large-Area High-Power Diodes. IEEE Journal of Emerging and Selected Topics in Power Electronics. 9(2). 2155–2162. 3 indexed citations

Buitrago, Elizabeth, et al.. (2019). A Critical View of IGBT Buffer Designs for 200 °C Operation. 47–50. 5 indexed citations

Vobecký, J., et al.. (2015). New Low Loss Thyristor for HVDC Transmission. 1–6. 1 indexed citations

Vobecký, J., et al.. (2015). A novel ultra-low loss four inch thyristor for UHVDC. 413–416. 12 indexed citations

Vemulapati, Umamaheswara, et al.. (2014). 3.3kV RC-IGCTs Optimized for Multi-Level Topologies. 1–8. 5 indexed citations

10.

Vobecký, J., et al.. (2014). New Thyristor Platform for UHVDC (>1 MV) Transmission. 1–6. 8 indexed citations

11.

Lophitis, Neophytos, Marina Antoniou, Florin Udrea, et al.. (2014). The Stripe Fortified GCT: A new GCT design for maximizing the controllable current. Ktisis at Cyprus University of Technology (Cyprus University of Technology). 123–126. 7 indexed citations

12.

Kopta, A., et al.. (2011). New 1700V SPT+ IGBT and diode chip set with 175°C operating junction temperature. European Conference on Power Electronics and Applications. 1–10. 5 indexed citations

13.

Vobecký, J.. (2011). Design and technology of high-power silicon devices. International Conference Mixed Design of Integrated Circuits and Systems. 17–22. 5 indexed citations

14.

Rahimo, Munaf, et al.. (2009). Realization of higher output power capability with the Bi-mode Insulated Gate Transistor (BIGT). European Conference on Power Electronics and Applications. 1–10. 14 indexed citations

15.

Rahimo, Munaf, et al.. (2008). A High Current 3300V Module Employing Reverse Conducting IGBTs Setting a New Benchmark in Output Power Capability. 68–71. 41 indexed citations

16.

Vobecký, J. & P. Hazdra. (2005). High-power P-i-N diode with local lifetime control using palladium diffusion controlled by radiation defects. IEEE Electron Device Letters. 26(12). 873–875. 11 indexed citations

17.

Vobecký, J. & P. Hazdra. (2002). High-power P-i-N diode with the local lifetime control based on the proximity gettering of platinum. IEEE Electron Device Letters. 23(7). 392–394. 17 indexed citations

18.

Vobecký, J., et al.. (1998). Application-Specific Fast-Recovery Diodes: Design and Performance. 8 indexed citations

19.

Vobecký, J., et al.. (1993). TCAD - A Progressive Tool for Engineers. SHILAP Revista de lepidopterología. 1 indexed citations

20.

Bleichner, H., et al.. (1992). A study of turn-off limitations and failure mechanisms of GTO thyristors by means of 2-D time-resolved optical measurements. Solid-State Electronics. 35(11). 1683–1695. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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