P. Hazdra

1.4k total citations
96 papers, 1.1k citations indexed

About

P. Hazdra is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, P. Hazdra has authored 96 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 92 papers in Electrical and Electronic Engineering, 35 papers in Atomic and Molecular Physics, and Optics and 13 papers in Materials Chemistry. Recurrent topics in P. Hazdra's work include Silicon and Solar Cell Technologies (47 papers), Semiconductor materials and devices (42 papers) and Silicon Carbide Semiconductor Technologies (34 papers). P. Hazdra is often cited by papers focused on Silicon and Solar Cell Technologies (47 papers), Semiconductor materials and devices (42 papers) and Silicon Carbide Semiconductor Technologies (34 papers). P. Hazdra collaborates with scholars based in Czechia, Switzerland and Germany. P. Hazdra's co-authors include J. Vobecký, Stanislav Popelka, K.D. Brand, Andrei Mihăilă, Rupendra Kumar Sharma, H. Dorschner, E. Hulicius, J. Pangrác, J. Oswald and K. Kuldová and has published in prestigious journals such as SHILAP Revista de lepidopterología, Physical review. B, Condensed matter and Applied Surface Science.

In The Last Decade

P. Hazdra

94 papers receiving 994 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Hazdra Czechia 19 1.0k 324 134 53 53 96 1.1k
A. O. Evwaraye United States 18 881 0.9× 403 1.2× 143 1.1× 29 0.5× 83 1.6× 54 937
Anatoly M. Strel’chuk Russia 14 672 0.7× 244 0.8× 103 0.8× 53 1.0× 21 0.4× 95 712
V. V. Emtsev Russia 15 554 0.6× 271 0.8× 207 1.5× 91 1.7× 65 1.2× 100 667
John R. Troxell United States 7 493 0.5× 345 1.1× 197 1.5× 44 0.8× 71 1.3× 16 569
Nikolaj Zangenberg Denmark 10 463 0.5× 296 0.9× 164 1.2× 38 0.7× 45 0.8× 23 543
Peter G. Muzykov United States 18 610 0.6× 232 0.7× 148 1.1× 24 0.5× 14 0.3× 49 672
V. V. Kozlovski Russia 12 508 0.5× 209 0.6× 71 0.5× 18 0.3× 29 0.5× 56 548
M. Wagener South Africa 12 443 0.4× 280 0.9× 203 1.5× 50 0.9× 12 0.2× 47 521
Z. C. Feng United States 11 352 0.4× 124 0.4× 265 2.0× 28 0.5× 22 0.4× 28 467
S. Zerlauth Austria 11 313 0.3× 240 0.7× 179 1.3× 31 0.6× 36 0.7× 28 433

Countries citing papers authored by P. Hazdra

Since Specialization
Citations

This map shows the geographic impact of P. Hazdra's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Hazdra with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Hazdra more than expected).

Fields of papers citing papers by P. Hazdra

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Hazdra. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Hazdra. The network helps show where P. Hazdra may publish in the future.

Co-authorship network of co-authors of P. Hazdra

This figure shows the co-authorship network connecting the top 25 collaborators of P. Hazdra. A scholar is included among the top collaborators of P. Hazdra based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Hazdra. P. Hazdra is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hazdra, P., et al.. (2024). Vertical Schottky diode on (113) oriented homoepitaxial diamond. Diamond and Related Materials. 146. 111180–111180. 1 indexed citations
2.
Mortet, V., Andrew Taylor, Marina Davydova, et al.. (2022). Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth. Diamond and Related Materials. 122. 108887–108887. 11 indexed citations
3.
Hazdra, P., et al.. (2021). Radiation Defects and Carrier Lifetime in 4H‐SiC Bipolar Devices. physica status solidi (a). 218(23). 1 indexed citations
4.
Alfieri, Giovanni, Andrei Mihăilă, Hussein M. Ayedh, et al.. (2016). Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes. Materials science forum. 858. 308–311. 3 indexed citations
5.
Vobecký, J., P. Hazdra, Stanislav Popelka, & Rupendra Kumar Sharma. (2015). Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode. IEEE Transactions on Electron Devices. 62(6). 1964–1969. 29 indexed citations
6.
Hazdra, P., J. Oswald, K. Kuldová, et al.. (2011). Self-Assembled InAs/GaAs Quantum Dots Covered by Different Strain Reducing Layers Exhibiting Strong Photo- and Electroluminescence in 1.3 and 1.55 <I>μ</I>m Bands. Journal of Nanoscience and Nanotechnology. 11(8). 6804–6809. 5 indexed citations
7.
Hazdra, P., J. Oswald, K. Kuldová, et al.. (2009). Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs. Superlattices and Microstructures. 46(1-2). 324–327. 6 indexed citations
8.
Hospodková, A., E. Hulicius, J. Pangrác, et al.. (2009). InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots. Journal of Crystal Growth. 312(8). 1383–1387. 15 indexed citations
9.
Hazdra, P., et al.. (2009). Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 156-158. 167–172. 1 indexed citations
10.
Hazdra, P., et al.. (2008). Influence of radiation defects on formation of thermal donors in silicon irradiated with high-energy helium ions. Materials Science and Engineering B. 159-160. 346–349. 8 indexed citations
11.
Hazdra, P., et al.. (2007). Local lifetime control in silicon power diode by ion irradiation: introduction and stability of shallow donors. IET Circuits Devices & Systems. 1(5). 321–326. 6 indexed citations
12.
Vobecký, J. & P. Hazdra. (2005). High-power P-i-N diode with local lifetime control using palladium diffusion controlled by radiation defects. IEEE Electron Device Letters. 26(12). 873–875. 11 indexed citations
13.
Jordà, X., J. Vobecký, Philippe Godignon, et al.. (2004). Electrical parameter variation of PT-IGBT by backside proton irradiation. 33. 289–292. 4 indexed citations
14.
Vobecký, J. & P. Hazdra. (2002). High-power P-i-N diode with the local lifetime control based on the proximity gettering of platinum. IEEE Electron Device Letters. 23(7). 392–394. 17 indexed citations
15.
16.
Vobecký, J., et al.. (2002). Crossing point current of power P-i-N diodes: impact of lifetime treatment. 2. 625–628. 2 indexed citations
17.
Kleverman, M., et al.. (1999). Excitation spectrum of a PtLi-related center in silicon. Physical review. B, Condensed matter. 59(7). 4858–4863. 1 indexed citations
18.
Vobecký, J., et al.. (1998). Application-Specific Fast-Recovery Diodes: Design and Performance. 8 indexed citations
19.
Vobecký, J., et al.. (1996). Optimization of power diode characteristics by means of ion irradiation. IEEE Transactions on Electron Devices. 43(12). 2283–2289. 50 indexed citations
20.
Vobecký, J., et al.. (1993). TCAD - A Progressive Tool for Engineers. SHILAP Revista de lepidopterología. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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