Shuhei Mitani

482 total citations
25 papers, 388 citations indexed

About

Shuhei Mitani is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Shuhei Mitani has authored 25 papers receiving a total of 388 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 8 papers in Electronic, Optical and Magnetic Materials and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Shuhei Mitani's work include Silicon Carbide Semiconductor Technologies (23 papers), Semiconductor materials and devices (20 papers) and Copper Interconnects and Reliability (8 papers). Shuhei Mitani is often cited by papers focused on Silicon Carbide Semiconductor Technologies (23 papers), Semiconductor materials and devices (20 papers) and Copper Interconnects and Reliability (8 papers). Shuhei Mitani collaborates with scholars based in Japan and United States. Shuhei Mitani's co-authors include Yuki Nakano, Heiji Watanabe, Takuji Hosoi, Takayoshi Shimura, Takashi Nakamura, Shinji Tanaka, Eibhlin Goggins, Takashi Nakamura, Ryota Nakamura and Kazuhiro Tsuruta and has published in prestigious journals such as Applied Physics Letters, Psychoneuroendocrinology and Clinical Science.

In The Last Decade

Shuhei Mitani

25 papers receiving 381 citations

Peers

Shuhei Mitani
R. Weggel United States
Jong‐Min Kim South Korea
Deborah Jaffey United States
Jung-Hwan Oh South Korea
Shuhei Mitani
Citations per year, relative to Shuhei Mitani Shuhei Mitani (= 1×) peers Manabu Takei

Countries citing papers authored by Shuhei Mitani

Since Specialization
Citations

This map shows the geographic impact of Shuhei Mitani's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shuhei Mitani with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shuhei Mitani more than expected).

Fields of papers citing papers by Shuhei Mitani

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shuhei Mitani. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shuhei Mitani. The network helps show where Shuhei Mitani may publish in the future.

Co-authorship network of co-authors of Shuhei Mitani

This figure shows the co-authorship network connecting the top 25 collaborators of Shuhei Mitani. A scholar is included among the top collaborators of Shuhei Mitani based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shuhei Mitani. Shuhei Mitani is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Goggins, Eibhlin, Shuhei Mitani, & Shinji Tanaka. (2022). Clinical perspectives on vagus nerve stimulation: present and future. Clinical Science. 136(9). 695–709. 48 indexed citations
3.
Mitani, Shuhei, et al.. (2018). Deep-P encapsulated 4H-SiC trench MOSFETs with ultra low RonQgd. 44–47. 19 indexed citations
4.
Mitani, Shuhei, Izuki Amano, & Yusuke Takatsuru. (2017). High prolactin concentration during lactation period induced disorders of maternal behavioral in offspring. Psychoneuroendocrinology. 88. 129–135. 3 indexed citations
5.
Hosoi, Takuji, Shuhei Mitani, Yuki Nakano, et al.. (2013). Dielectric Properties of Thermally Grown SiO<sub>2</sub> on 4H-SiC(0001) Substrates. Materials science forum. 740-742. 605–608. 4 indexed citations
6.
Watanabe, Heiji, Shuhei Mitani, Yuki Nakano, et al.. (2013). Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing. Materials science forum. 740-742. 741–744. 12 indexed citations
7.
Hosoi, Takuji, Shuhei Mitani, Yuki Nakano, et al.. (2012). Investigation of unusual mobile ion effects in thermally grown SiO2 on 4H-SiC(0001) at high temperatures. Applied Physics Letters. 100(25). 252103–252103. 46 indexed citations
8.
Hosoi, Takuji, Yusaku Kashiwagi, Ryota Nakamura, et al.. (2012). Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics. 7.4.1–7.4.4. 29 indexed citations
9.
Mitani, Shuhei, Yuki Nakano, Takashi Nakamura, et al.. (2012). Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices. Materials science forum. 717-720. 765–768. 8 indexed citations
10.
Nakano, Yuki, Ryota Nakamura, Hiroyuki Sakairi, Shuhei Mitani, & Takashi Nakamura. (2012). 690V, 1.00 mΩcm<sup>2</sup> 4H-SiC Double-Trench MOSFETs. Materials science forum. 717-720. 1069–1072. 32 indexed citations
11.
Watanabe, Heiji, Akitaka Yoshigoe, Yuden Teraoka, et al.. (2011). (Invited) Impact of Stacked AlON/SiO2 Gate Dielectrics for SiC Power Devices. ECS Transactions. 35(2). 265–274. 6 indexed citations
12.
Hosoi, Takuji, Shuhei Mitani, Yuki Nakano, et al.. (2011). Reduction of Charge Trapping Sites in Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices. Materials science forum. 679-680. 496–499. 8 indexed citations
13.
Watanabe, Heiji, Takuji Hosoi, Akitaka Yoshigoe, et al.. (2011). (Invited) Gate Stack Technologies for SiC Power MOSFETs. ECS Transactions. 41(3). 77–90. 6 indexed citations
14.
Watanabe, Heiji, Akitaka Yoshigoe, Yuden Teraoka, et al.. (2011). Impact of Stacked AlON/SiO2 Gate Dielectrics for SiC Power Devices. ECS Meeting Abstracts. MA2011-01(16). 1141–1141. 1 indexed citations
15.
Watanabe, Heiji, James Harries, Akitaka Yoshigoe, et al.. (2011). Energy Band Structure of SiO<sub>2</sub>/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer. Materials science forum. 679-680. 386–389. 27 indexed citations
16.
Hosoi, Takuji, Shuhei Mitani, Yuki Nakano, et al.. (2010). Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy. Materials science forum. 645-648. 821–824. 7 indexed citations
17.
Watanabe, Y., Shuhei Mitani, Yuki Nakano, et al.. (2010). Improved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) Surfaces. Materials science forum. 645-648. 507–510. 4 indexed citations
18.
Hosoi, Takuji, Y. Watanabe, Shuhei Mitani, et al.. (2010). Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO<sub>2</sub> Stacked Gate Dielectrics. Materials science forum. 645-648. 991–994. 11 indexed citations
19.
Hosoi, Takuji, Makoto Harada, Y. Watanabe, et al.. (2009). AlON/SiO<sub>2</sub> Stacked Gate Dielectrics for 4H-SiC MIS Devices. Materials science forum. 615-617. 541–544. 19 indexed citations
20.
Watanabe, Heiji, Y. Watanabe, Makoto Harada, et al.. (2009). Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO<sub>2</sub>/SiC Interfaces. Materials science forum. 615-617. 525–528. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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