Peter Friedrichs

2.0k total citations
89 papers, 1.6k citations indexed

About

Peter Friedrichs is a scholar working on Electrical and Electronic Engineering, Mechanical Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Peter Friedrichs has authored 89 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 87 papers in Electrical and Electronic Engineering, 14 papers in Mechanical Engineering and 11 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Peter Friedrichs's work include Silicon Carbide Semiconductor Technologies (83 papers), Semiconductor materials and devices (28 papers) and Electromagnetic Compatibility and Noise Suppression (23 papers). Peter Friedrichs is often cited by papers focused on Silicon Carbide Semiconductor Technologies (83 papers), Semiconductor materials and devices (28 papers) and Electromagnetic Compatibility and Noise Suppression (23 papers). Peter Friedrichs collaborates with scholars based in Germany, Canada and Austria. Peter Friedrichs's co-authors include Dethard Peters, D. Stephani, Reinhold Schörner, H. Mitlehner, Roland Rupp, Edmund P. Burte, Rudolf Elpelt, Karl Otto Dohnke, Marcelo Lobo Heldwein and Johann W. Kolar and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Peter Friedrichs

87 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Peter Friedrichs Germany 23 1.6k 204 150 69 65 89 1.6k
L. Storasta Sweden 20 1.4k 0.9× 392 1.9× 195 1.3× 51 0.7× 98 1.5× 54 1.5k
Dethard Peters Germany 20 1.2k 0.8× 173 0.8× 137 0.9× 35 0.5× 53 0.8× 58 1.3k
Reza Ghandi Sweden 18 950 0.6× 163 0.8× 83 0.6× 27 0.4× 106 1.6× 75 1.0k
Takafumi Okuda Japan 14 723 0.5× 158 0.8× 87 0.6× 46 0.7× 67 1.0× 63 758
Thomas Aichinger Austria 23 2.0k 1.3× 129 0.6× 76 0.5× 28 0.4× 129 2.0× 83 2.1k
Noriyuki Iwamuro Japan 19 1.2k 0.8× 123 0.6× 54 0.4× 43 0.6× 72 1.1× 85 1.2k
Martin Domeij Sweden 19 1.1k 0.7× 171 0.8× 69 0.5× 26 0.4× 90 1.4× 101 1.2k
Daniel B. Habersat United States 20 1.8k 1.2× 157 0.8× 103 0.7× 40 0.6× 60 0.9× 69 1.9k
Jim Richmond United States 27 2.3k 1.5× 192 0.9× 128 0.9× 33 0.5× 61 0.9× 80 2.3k
Sumi Krishnaswami United States 16 880 0.6× 71 0.3× 86 0.6× 83 1.2× 124 1.9× 52 931

Countries citing papers authored by Peter Friedrichs

Since Specialization
Citations

This map shows the geographic impact of Peter Friedrichs's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Peter Friedrichs with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Peter Friedrichs more than expected).

Fields of papers citing papers by Peter Friedrichs

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Peter Friedrichs. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Peter Friedrichs. The network helps show where Peter Friedrichs may publish in the future.

Co-authorship network of co-authors of Peter Friedrichs

This figure shows the co-authorship network connecting the top 25 collaborators of Peter Friedrichs. A scholar is included among the top collaborators of Peter Friedrichs based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Peter Friedrichs. Peter Friedrichs is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hensel, Andreas, et al.. (2024). High-voltage converter with 2 kV SiC MOSFETs for electric fast charging stations. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 1–8.
2.
Friedrichs, Peter. (2020). Ruggedness of SiC devices under extreme conditions. 1–5. 1 indexed citations
3.
Friedrichs, Peter. (2018). SiC based power semiconductor in applications - aspects and prospects. 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia). 3584–3587. 5 indexed citations
4.
5.
6.
Noborio, Masato, Anton J. Bauer, Dethard Peters, et al.. (2011). Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices. Japanese Journal of Applied Physics. 50(9R). 90201–90201. 7 indexed citations
7.
Friedrichs, Peter, et al.. (2010). Growth, defects, and novel applications. Wiley-VCH eBooks. 3 indexed citations
8.
Noborio, Masato, Dethard Peters, Anton J. Bauer, et al.. (2009). Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N<sub>2</sub>O or NO. Materials science forum. 615-617. 521–524. 18 indexed citations
9.
Peters, Dethard, et al.. (2008). Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face. Materials science forum. 600-603. 597–602. 5 indexed citations
10.
Thomas, Bernd, Christian Hecht, René Stein, & Peter Friedrichs. (2006). Advances in 4H-SiC Homoepitaxy for Production and Development of Power Devices. MRS Proceedings. 911. 2 indexed citations
11.
Friedrichs, Peter & T. Reimann. (2006). Behavior of High Voltage SiC VJFETs under Avalanche Conditions. 16 indexed citations
12.
Friedrichs, Peter. (2006). Unipolar SiC Devices ¿ Latest Achievements on the Way to a New Generation of High Voltage Power Semiconductors. 2006 5th International Power Electronics and Motion Control Conference. 1–5. 5 indexed citations
13.
Bauer, Anton J., et al.. (2005). Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing. Materials science forum. 483-485. 621–624. 5 indexed citations
14.
Friedrichs, Peter. (2004). Charge Controlled Silicon Carbide Switching Devices. MRS Proceedings. 815. 9 indexed citations
15.
Peters, Dethard, Adolf Schöner, Peter Friedrichs, & D. Stephani. (2003). 4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications. Materials science forum. 433-436. 769–772. 33 indexed citations
16.
Peters, Dethard, et al.. (2003). Electrical performance of triple implanted vertical silicon carbide MOSFETs with low on-resistance. 103–106. 10 indexed citations
17.
Lindemann, Andreas, Peter Friedrichs, & Roland Rupp. (2002). New Semiconductor Material Power Components for High End Power Supplies. 3 indexed citations
18.
Peters, Dethard, et al.. (2002). Characterization of fast 4.5 kV SiC p-n diodes. 241–244. 8 indexed citations
19.
Friedrichs, Peter, et al.. (2001). Influence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in 4H-SiC. Materials science forum. 353-356. 695–698. 5 indexed citations
20.
Peters, Dethard, Reinhold Schörner, Peter Friedrichs, et al.. (1999). An 1800 V triple implanted vertical 6H-SiC MOSFET. IEEE Transactions on Electron Devices. 46(3). 542–545. 40 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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