Jörg Schörmann

1.8k total citations
67 papers, 1.4k citations indexed

About

Jörg Schörmann is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Jörg Schörmann has authored 67 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Condensed Matter Physics, 35 papers in Electronic, Optical and Magnetic Materials and 35 papers in Materials Chemistry. Recurrent topics in Jörg Schörmann's work include GaN-based semiconductor devices and materials (52 papers), Ga2O3 and related materials (35 papers) and ZnO doping and properties (30 papers). Jörg Schörmann is often cited by papers focused on GaN-based semiconductor devices and materials (52 papers), Ga2O3 and related materials (35 papers) and ZnO doping and properties (30 papers). Jörg Schörmann collaborates with scholars based in Germany, France and Spain. Jörg Schörmann's co-authors include Martin Eickhoff, D. J. As, K. Lischka, Pascal Hille, R. Goldhahn, E. Monroy, Marcus Rohnke, J. Teubert, Jordi Arbiol and Marı́a de la Mata and has published in prestigious journals such as Physical Review Letters, Nano Letters and ACS Nano.

In The Last Decade

Jörg Schörmann

64 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jörg Schörmann Germany 22 801 796 727 427 333 67 1.4k
Jonas Lähnemann Germany 22 840 1.0× 726 0.9× 570 0.8× 425 1.0× 379 1.1× 66 1.4k
Florian Furtmayr Germany 18 570 0.7× 723 0.9× 468 0.6× 340 0.8× 193 0.6× 23 1.1k
D. Imhoff France 16 936 1.2× 317 0.4× 774 1.1× 335 0.8× 246 0.7× 39 1.3k
Fabrice Donatini France 21 1.0k 1.3× 348 0.4× 334 0.5× 868 2.0× 243 0.7× 77 1.5k
Bo Monemar Sweden 23 1.7k 2.1× 682 0.9× 1.5k 2.1× 767 1.8× 434 1.3× 100 2.3k
Corinne Sartel France 17 753 0.9× 269 0.3× 501 0.7× 528 1.2× 163 0.5× 68 1.1k
A. Mascaraque Spain 22 616 0.8× 368 0.5× 272 0.4× 351 0.8× 1.3k 3.8× 79 1.6k
Jason Hoffman United States 20 2.2k 2.7× 653 0.8× 2.2k 3.0× 590 1.4× 314 0.9× 38 2.8k
Hyun Jeong South Korea 18 872 1.1× 554 0.7× 361 0.5× 405 0.9× 156 0.5× 64 1.2k
A. Liebig Germany 13 1.3k 1.7× 195 0.2× 359 0.5× 836 2.0× 525 1.6× 34 1.9k

Countries citing papers authored by Jörg Schörmann

Since Specialization
Citations

This map shows the geographic impact of Jörg Schörmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jörg Schörmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jörg Schörmann more than expected).

Fields of papers citing papers by Jörg Schörmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jörg Schörmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jörg Schörmann. The network helps show where Jörg Schörmann may publish in the future.

Co-authorship network of co-authors of Jörg Schörmann

This figure shows the co-authorship network connecting the top 25 collaborators of Jörg Schörmann. A scholar is included among the top collaborators of Jörg Schörmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jörg Schörmann. Jörg Schörmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Winkler, F.K., Andreas Beyer, Jürgen Belz, et al.. (2025). Metal-Modulated Growth of Cubic, Red-Emitting InGaN Layers and Self-Assembled InGaN/GaN Quantum Wells by Molecular Beam Epitaxy. ACS Applied Electronic Materials. 7(5). 1891–1898. 1 indexed citations
3.
Klement, Philip, Stefan R. Kachel, Jörg Schörmann, et al.. (2024). Synthesis of 2D Gallium Sulfide with Ultraviolet Emission by MOCVD. Small. 20(37). e2402155–e2402155. 8 indexed citations
4.
Nippert, Felix, Benjamin März, Tim Grieb, et al.. (2023). Origin of the spectral red-shift and polarization patterns of self-assembled InGaN nanostructures on GaN nanowires. Nanoscale. 15(15). 7077–7085. 1 indexed citations
5.
Rueß, Raffael, Philip Klement, Jörg Schörmann, et al.. (2023). Correlation between Surface Reactions and Electrochemical Performance of Al2O3‐ and CeO2‐Coated NCM Thin Film Cathodes. Advanced Materials Interfaces. 10(9). 8 indexed citations
6.
Hofmann, Detlev M., et al.. (2023). Growth of cubic InxGa1-xN over whole composition by MBE. 20–20. 1 indexed citations
7.
Vogt, Patrick, Jörg Schörmann, Marcus Rohnke, et al.. (2022). Enhanced epitaxial growth of Ga2O3 using an ultrathin SnO2 layer. Journal of Applied Physics. 132(19). 5 indexed citations
8.
Klement, Philip, et al.. (2022). Harnessing the Potential of Porous ZnO Photoanodes in Dye-Sensitized Solar Cells by Atomic Layer Deposition of Mg-Doped ZnO. ACS Applied Energy Materials. 5(12). 14825–14835. 4 indexed citations
9.
Cop, Pascal, Rajendra Singh Negi, Andrey Mazilkin, et al.. (2022). Design of Ordered Mesoporous CeO2–YSZ Nanocomposite Thin Films with Mixed Ionic/Electronic Conductivity via Surface Engineering. ACS Nano. 16(2). 3182–3193. 10 indexed citations
10.
Hille, Pascal, et al.. (2021). Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures. Nano Express. 2(3). 34001–34001. 4 indexed citations
11.
Grieb, Tim, Florian F. Krause, Knut Müller‐Caspary, et al.. (2021). 4D-STEM at interfaces to GaN: Centre-of-mass approach & NBED-disc detection. Ultramicroscopy. 228. 113321–113321. 15 indexed citations
12.
Hille, Pascal, Felix Walther, Philip Klement, et al.. (2018). Influence of the atom source operating parameters on the structural and optical properties of InxGa1−xN nanowires grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics. 124(16). 2 indexed citations
13.
Callsen, Gordon, Pascal Hille, Jörg Schörmann, et al.. (2018). Optical emission of GaN/AlN quantum-wires – the role of charge transfer from a nanowire template. Nanoscale. 10(12). 5591–5598. 11 indexed citations
14.
Hönig, Gerald, Pascal Hille, Tim Grieb, et al.. (2018). Suppression of the quantum-confined Stark effect in polar nitride heterostructures. Communications Physics. 1(1). 18 indexed citations
15.
Maier, Konrad, Andreas Helwig, Gerhard Müller, Jörg Schörmann, & Martin Eickhoff. (2018). Photoluminescence Detection of Surface Oxidation Processes on InGaN/GaN Nanowire Arrays. ACS Sensors. 3(11). 2254–2260. 11 indexed citations
16.
Hille, Pascal, Jörg Schörmann, A. J. Frank, et al.. (2017). Passivation layers for nanostructured photoanodes: ultra-thin oxides on InGaN nanowires. Journal of Materials Chemistry A. 6(2). 565–573. 29 indexed citations
17.
Riedel, Marc, et al.. (2017). InGaN/GaN nanowires as a new platform for photoelectrochemical sensors – detection of NADH. Biosensors and Bioelectronics. 94. 298–304. 47 indexed citations
18.
Lim, Caroline B., Akhil Ajay, Catherine Bougerol, et al.. (2016). Effect of doping on the far-infrared intersubband transitions in nonpolarm-plane GaN/AlGaN heterostructures. Nanotechnology. 27(14). 145201–145201. 14 indexed citations
19.
Lim, Caroline B., Akhil Ajay, Catherine Bougerol, et al.. (2015). Nonpolarm-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band. Nanotechnology. 26(43). 435201–435201. 24 indexed citations
20.
Hille, Pascal, et al.. (2013). Radical formation at the gallium nitride nanowire–electrolyte interface by photoactivated charge transfer. Nanotechnology. 24(32). 325701–325701. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026