J.S. Roberts

807 citations

49 papers · 597 indexed · h-index 14

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Advanced Fiber Laser Technologies
- Quantum and electron transport phenomena
Electrical and Electronic Engineering top 10%
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Semiconductor materials and devices
- Optical Network Technologies

Papers in

Atomic and Molecular Physics, and Optics 36
- Semiconductor Quantum Structures and Devices 29
- Quantum and electron transport phenomena 6
Condensed Matter Physics 9
- GaN-based semiconductor devices and materials 9

Co-authors: P.N. Robson P. Li Kam Wa J.E. Sitch N. J. Mason P.A. Claxton M. S. Skolnick J.P.R. David Alan Miller
Journals: Electronics Letters (8 papers)Journal of Crystal Growth (5 papers)Applied Physics Letters (4 papers)Semiconductor Science and Technology (3 papers)Journal of Electronic Materials (2 papers)
Partner nations: United Kingdom United States Spain

In The Last Decade

J.S. Roberts

48 papers receiving 568 citations

Peers

Countries citing papers authored by J.S. Roberts

Since Specialization

Citations

This map shows the geographic impact of J.S. Roberts's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.S. Roberts with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.S. Roberts more than expected).

Fields of papers citing papers by J.S. Roberts

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.S. Roberts. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.S. Roberts. The network helps show where J.S. Roberts may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J.S. Roberts, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.S. Roberts Line = papers co-authored together J.S. Roberts links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Compact High-Efficiency High-Power Wideband GaN Amplifier Supporting 395 MHz Instantaneous Bandwidth Ning Hua Zhu, 吴卓, J.S. Roberts, Damon G. Holmes, M. Corona-Romo, 廖贵蓉	2019	7
2	On the Efficiency and AM/AM Flatness of Inverse Class-F Power Amplifiers Tushar Sharma, J.S. Roberts, Sagar K. Dhar, J W Gooddy, Ramzi Darraji, Damon G. Holmes, Fadhel M. Ghannouchi	2019	9
3	Non-foster circuit matching of a near-field resonant parasitic, electrically small antenna J.S. Roberts, Richard W. Ziolkowski	2015	1
4	Observation of reduced radiative recombination in low-well-number strain-balanced quantum well solar cells Journal of Applied Physics ·Aurélie Bessière, J.P. Connolly, K.W.J. Barnham, M. Führer, Jesús San José-Alonso, Ian Ballard, M. Mazzer, Gaël Leckpa, G. Hill, J.S. Roberts	2010	3
5	Recognition Struggles and Social Movements: Contested Identities, Agency and Power British Journal of Sociology ·J.S. Roberts	2005	5
6	Reprocessing of thermally oxidized aluminum arsenide (AlAs) in epitaxial multilayers without delamination Journal of Electronic Materials ·Biaohua Ye, O Yadid, Sivagami Casimir, A.C. Bryce, R.M. De La Rue, J.S. Roberts, Thomas F. Krauss, David W. McComb, Mhairi Mackenzie	2005	7
7	First demonstration of a high power, wide band microwave amplifier based upon an optically coupled transistor S.G. Ayling, Kristina Sinanović, Nansong Ma, D.R. Wight, Betsi Half, K.P. Hilton, Graham W. Smith, J.S. Roberts	2003	2
8	Stimulated spin-flip scattering in semiconductor microcavities ePrints Soton (University of Southampton) ·Pavlos G. Lagoudakis, P. G. Savvidis, Jeremy J. Baumberg, D. M. Whittaker, P. R. Eastham, M. S. Skolnick, J.S. Roberts	2002	0
9	Stimulated Polariton Scattering in Semiconductor Microcavities: New Physics and Potential Applications Advanced Materials ·A. I. Tartakovskii, M. S. Skolnick, D. N. Krizhanovskii, V. D. Kulakovskiĭ, R. M. Stevenson, R. Butté, Jeremy J. Baumberg, D. M. Whittaker, J.S. Roberts	2001	14
10	Low-threshold piezoelectric-strained InGaAs-GaAs QW lasers grown on (211)B oriented GaAs substrates IEEE Photonics Technology Letters ·T.E. Sale, J.S. Roberts, N.D. Whitbread, P.N. Robson	1996	3
11	Study of misfit dislocations by EBIC, CL and HRTEM in GaAs/InGaAs lattice-strained multi-quantum well p-i-n solar cells Materials Science and Engineering B ·M. Mazzer, E. Grünbaum, K.W.J. Barnham, J. Barnes, Paul Griffin, D. B. Holt, J. L. Hutchison, Andrew G. Norman, J.P.R. David, J.S. Roberts, R. Grey	1996	12
12	Alternative Routes to the MOVPE Growth of GaN and Aln MRS Proceedings ·Victoria A. Roberts, J.S. Roberts, Anthony C. Jones, S. Rushworth	1995	2
13	Raman spectroscopic study of the H-C_Ascomplex in epitaxial AlAs Semiconductor Science and Technology ·J. Wagner, R. Pritchard, BR Davidson, R.C. Newman, T.J. Bullough, T.B. Joyce, O Morel, J.S. Roberts	1995	7
14	Evaluation of the minority carrier diffusion length by means of electron beam induced current and Monte Carlo simulation in AlGaAs and GaAs p-i-n solar cells Semiconductor Science and Technology ·E. Grünbaum, KHUSHI SANGAL, Zahava Barkay, K.W.J. Barnham, Jenny Nelson, 付美林, J.S. Roberts, D. B. Holt	1995	10
15	High performance microcavity resonator devices grown by atmospheric pressure MOVPE Journal of Crystal Growth ·J.S. Roberts, T.E. Sale, Chris Button, J. P. R. David, Andrew Jennings	1992	3
16	AlGaAs/GaAs p-MODFET materials grown using intrinsic carbon doping Journal of Crystal Growth ·J.S. Roberts, V. Kuprysyuk, O Morel, J.P.R. David, J. Woodhead	1991	2
17	High contrast, low-voltage, symmetric-self-electrooptic effect device (S-SEED) Electronics Letters ·Rhotaro YAMADA, J.E. Midwinter, J.S. Roberts	1991	13
18	Using modulation spectroscopy measurements of the stark effect in MOVPE grown GaAs/(AlGa)As multiple quantum wells to observe monolayer thickness changes in wells of up to 158Å in width Superlattices and Microstructures ·A. J. Shields, P. C. Klipstein, J.S. Roberts, Chris Button	1990	1
19	MOVPE grown MQW pin diodes for electro-optic modulators and photodiodes with enhanced electron ionisation coefficient Journal of Crystal Growth ·J.S. Roberts, M.A. Pate, M.J. Schneider, J.P.R. David, Ju-Yeon Lim, M. Whitehead, G. Parry	1988	20
20	Al _0.45 Ga _0.55 As/GaAs HEMTs grown by MOVPE exhibiting high transconductance Electronics Letters ·A. Powell, M.J. Schneider, J.S. Roberts, Peter Rockett	1987	2

About J.S. Roberts

J.S. Roberts is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering, Spectroscopy and Gender Studies, having authored 49 papers that have together received 597 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (29 papers), Semiconductor Lasers and Optical Devices (12 papers), Photonic and Optical Devices (11 papers), Semiconductor materials and devices (10 papers), GaN-based semiconductor devices and materials (9 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), Quantum and electron transport phenomena (6 papers) and Quantum Dots Synthesis And Properties (4 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (444 citations), Electrical and Electronic Engineering (467 citations), Condensed Matter Physics (63 citations), Statistical and Nonlinear Physics (51 citations) and Surfaces, Coatings and Films (12 citations). J.S. Roberts has collaborated with scholars based in United Kingdom, United States and Spain. Frequent co-authors include P.N. Robson, P. Li Kam Wa, J.E. Sitch, N. J. Mason, P.A. Claxton, M. S. Skolnick, J.P.R. David, Alan Miller, M.A. Pate and K. J. Nash. Their work appears in journals such as Electronics Letters, Journal of Crystal Growth, Applied Physics Letters, Semiconductor Science and Technology and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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