H.‐J. Buehlmann

429 total citations
7 papers, 80 citations indexed

About

H.‐J. Buehlmann is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, H.‐J. Buehlmann has authored 7 papers receiving a total of 80 indexed citations (citations by other indexed papers that have themselves been cited), including 6 papers in Electrical and Electronic Engineering, 4 papers in Condensed Matter Physics and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in H.‐J. Buehlmann's work include Advancements in Semiconductor Devices and Circuit Design (4 papers), Semiconductor materials and devices (4 papers) and GaN-based semiconductor devices and materials (4 papers). H.‐J. Buehlmann is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (4 papers), Semiconductor materials and devices (4 papers) and GaN-based semiconductor devices and materials (4 papers). H.‐J. Buehlmann collaborates with scholars based in Switzerland and United Kingdom. H.‐J. Buehlmann's co-authors include M. A. Py, M. Ilegems, V. Wagner, O. Parillaud, D. Simeonov, R. Butté, N. Grandjean, E. Feltin, J. Dorsaz and J.‐F. Carlin and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and physica status solidi (a).

In The Last Decade

H.‐J. Buehlmann

5 papers receiving 78 citations

Peers

H.‐J. Buehlmann
Comparison fields: 5 of 8
  • Condensed Matter Physics 52
  • Electrical and Electronic Engineering 46
  • Atomic and Molecular Physics, and Optics 42
  • Electronic, Optical and Magnetic Materials 15
  • Materials Chemistry 15
Replace Dilini Hemakumara with:
Dilini Hemakumara United Kingdom
K. A. Jones United States
W. Liu Singapore
R.S. Amos United States
W. Wang United States
H.-J. Mathes Germany
G. Keppel Italy
B. Krist United States
Young-Bae Lee Japan
O. Reentilä Finland
Dilini Hemakumara United Kingdom View profile →
Citations per field, relative to H.‐J. Buehlmann
H.‐J. Buehlmann · 1×
Citations per year, relative to H.‐J. Buehlmann
H.‐J. Buehlmann · 1×

Countries citing papers authored by H.‐J. Buehlmann

Since Specialization
Citations

This map shows the geographic impact of H.‐J. Buehlmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.‐J. Buehlmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.‐J. Buehlmann more than expected).

Fields of papers citing papers by H.‐J. Buehlmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.‐J. Buehlmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.‐J. Buehlmann. The network helps show where H.‐J. Buehlmann may publish in the future.

Co-authorship network of co-authors of H.‐J. Buehlmann

This figure shows the co-authorship network connecting the top 25 collaborators of H.‐J. Buehlmann. A scholar is included among the top collaborators of H.‐J. Buehlmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H.‐J. Buehlmann. H.‐J. Buehlmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

7 of 7 papers shown
# Work Indexed citations
1 24
2 11
3 0
4
HVPE and MOVPE GaN growth on slightly misoriented sapphire substrates[Hydride Vapor Phase Epitaxy, Metal Organic Vapor Phase Epitaxy]
0
5 21
6 22
7
Analytical modeling of modfet transfer characteristics at low drain bias by taking into account the dependence of mobility on 2d electron gas concentration
2

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026