B. Borchert

1.3k citations

49 papers · 919 indexed · h-index 18

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Advanced Fiber Laser Technologies
Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials

Papers in ⓘ

Atomic and Molecular Physics, and Optics 37
- Semiconductor Quantum Structures and Devices 26
- Advanced Fiber Laser Technologies 8
Electrical and Electronic Engineering 47
- Semiconductor Lasers and Optical Devices 41
- Photonic and Optical Devices 32
- Optical Network Technologies 6
- Advanced Semiconductor Detectors and Materials 3
- Semiconductor materials and devices 3

Co-authors: S. Illek (17 shared papers)A. Yu. Egorov (9 shared papers)H. Riechert (9 shared papers)B. Stegmüller (9 shared papers)J. Koch (3 shared papers)F. Höhnsdorf (3 shared papers)W. Stolz (3 shared papers)Thomas Wolf (6 shared papers)
Journals: Electronics Letters (14 papers)IEEE Photonics Technology Letters (9 papers)Applied Physics Letters (4 papers)IEEE Journal of Quantum Electronics (3 papers)Japanese Journal of Applied Physics (2 papers)
Partner nations: Germany Switzerland United Kingdom

In The Last Decade

B. Borchert

46 papers receiving 847 citations

Peers

Countries citing papers authored by B. Borchert

Since Specialization

Citations

This map shows the geographic impact of B. Borchert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Borchert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Borchert more than expected).

Fields of papers citing papers by B. Borchert

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Borchert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Borchert. The network helps show where B. Borchert may publish in the future.

Co-authors

The 25 scholars most cited alongside B. Borchert, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Borchert Line = papers co-authored together B. Borchert links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 49 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Reduced threshold current densities of (GaIn)(NAs)/GaAssingle quantum welllasers for emission wavelengths in the range 1.28 – 1.38 µm Electronics Letters ·F. Höhnsdorf, J. Koch, S. Leu, W. Stolz, B. Borchert, M. Druminski	1999	127
2	Gain-coupled DFB lasers versus index-coupled and phase shifted DFB lasers: a comparison based on spatial hole burning corrected yield IEEE Journal of Quantum Electronics ·K. David, Geert Morthier, P. Vankwikelberge, Roel Baets, Thomas Wolf, B. Borchert	1991	110
3	1.29 µm GaInNAs multiple quantum-well ridge-waveguidelaser diodes with improved performance Electronics Letters ·B. Borchert, A. Yu. Egorov, S. Illek, M. Komainda, H. Riechert	1999	61
4	Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime Applied Physics Letters ·Martin R. Hofmann, Anke Wagner, C. Ellmers, C. Schlichenmeier, Sören Schäfer, F. Höhnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, Jerome V. Moloney, Eoin P. O’Reilly, B. Borchert, A. Yu. Egorov, H. Riechert	2001	53
5	Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes IEEE Photonics Technology Letters ·B. Borchert, A. Yu. Egorov, S. Illek, H. Riechert	2000	50
6	1.55 mu m gain-coupled quantum-well distributed feedback lasers with high single-mode yield and narrow linewidth IEEE Photonics Technology Letters ·B. Borchert, K. David, B. Stegmüller, R. Geßner, M. Beschorner, D. Sacher, Gerhard Franz	1991	50
7	Growth of high quality InGaAsN heterostructures and their laser application Journal of Crystal Growth ·A. Yu. Egorov, D. Bernklau, B. Borchert, S. Illek, D. Livshits, A. Rucki, M. Schuster, A. Kaschner, A. Hoffmann, Gh. Dumitras, M.-C. Amann, H. Riechert	2001	45
8	Emission dynamics and optical gain of 1.3-μm (GaIn)(NAs)/GaAs lasers IEEE Journal of Quantum Electronics ·Martin R. Hofmann, Nils C. Gerhardt, Anke Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, Jerome V. Moloney, Eoin P. O’Reilly, B. Borchert, A. Yu. Egorov, H. Riechert, Hans Christian Schneider, Chi‐Wai Chow	2002	34
9	Low threshold lasing operation of narrow stripeoxide-confinedGaInNAs/GaAs multiquantum well lasers at 1.28 µm Electronics Letters ·S. Illek, A. Ultsch, B. Borchert, A. Yu. Egorov, H. Riechert	2000	33
10	1.57 mu m strained-layer quantum-well GaInAlAs ridge-waveguide laser diodes with high temperature (130 degrees C) and ultrahigh-speed (17 GHz) performance IEEE Photonics Technology Letters ·B. Stegmüller, B. Borchert, R. Geßner	1993	26
11	InGaAsN/GaAs heterostructures for long-wavelength light-emitting devices Nanotechnology ·H. Riechert, A. Yu. Egorov, D. Livshits, B. Borchert, S. Illek	2000	26
12	10 Gbit/s transmission using directly modulateduncooled MQW ridge waveguide DFB lasers inTO package Electronics Letters ·A. Ebberg, F. Auracher, B. Borchert	2000	23
13	Hot-electron effects on short-channel MOSFETs determined by the piezoresistance effect IEEE Transactions on Electron Devices ·B. Borchert, G. Dorda	1988	22
14	Positive and negative charge generation by hot carriers in n -MOSFETs Electronics Letters ·B. Borchert, K.R. Hofmann, G. Dorda	1983	21
15	Tunable twin-guide (TTG) distributed feedback (DFB) laser with over 10 nm continuous tuning range Electronics Letters ·T. Wolf, S. Illek, J. Rieger, B. Borchert, Markus‐Christian Amann	1993	21
16	Fabrication and characteristics of improved strained quantum-well GaInAlAs gain-coupled DFB lasers Electronics Letters ·B. Borchert, B. Stegmüller, R. Geßner	1993	19
17	Optical network analysis and longitudinal structure characterization of fiber Bragg grating Journal of Lightwave Technology ·D. Sandel, R. Noé, G. Heise, B. Borchert	1998	19
18	Asymmetric quantum wells with enhanced QCSE: modulation behaviour and application for integrated laser/modulator IEEE Photonics Technology Letters ·Philipp Steinmann, B. Borchert, B. Stegmüller	1997	17
19	Dynamic behaviour of complex-coupled DFB laserswith in-phase absorptive grating Electronics Letters ·Jürgen Zoz, B. Borchert	1994	16
20	Linewidth broadening by 1/f noise in wavelength-tunable laser diodes Applied Physics Letters ·Markus Amann, R. Hakimi, B. Borchert, S. Illek	1997	15

About B. Borchert

B. Borchert is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, Surfaces, Coatings and Films and Computational Theory and Mathematics, having authored 49 papers that have together received 919 indexed citations. Recurring topics across this work include Semiconductor Lasers and Optical Devices (41 papers), Photonic and Optical Devices (32 papers), Semiconductor Quantum Structures and Devices (26 papers), Advanced Fiber Laser Technologies (8 papers), Optical Network Technologies (6 papers), GaN-based semiconductor devices and materials (4 papers), Advanced Semiconductor Detectors and Materials (3 papers) and Semiconductor materials and devices (3 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (726 citations), Condensed Matter Physics (188 citations), Electrical and Electronic Engineering (865 citations), Spectroscopy (62 citations) and Surfaces, Coatings and Films (19 citations). B. Borchert has collaborated with scholars based in Germany, Switzerland and United Kingdom. Frequent co-authors include S. Illek, A. Yu. Egorov, H. Riechert, B. Stegmüller, J. Koch, F. Höhnsdorf, W. Stolz, Thomas Wolf, K. David and R. Geßner. Their work appears in journals such as Electronics Letters, IEEE Photonics Technology Letters, Applied Physics Letters, IEEE Journal of Quantum Electronics and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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