B. Borchert

1.3k total citations
49 papers, 919 citations indexed

About

B. Borchert is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, B. Borchert has authored 49 papers receiving a total of 919 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 37 papers in Atomic and Molecular Physics, and Optics and 4 papers in Condensed Matter Physics. Recurrent topics in B. Borchert's work include Semiconductor Lasers and Optical Devices (41 papers), Photonic and Optical Devices (32 papers) and Semiconductor Quantum Structures and Devices (26 papers). B. Borchert is often cited by papers focused on Semiconductor Lasers and Optical Devices (41 papers), Photonic and Optical Devices (32 papers) and Semiconductor Quantum Structures and Devices (26 papers). B. Borchert collaborates with scholars based in Germany, Switzerland and United Kingdom. B. Borchert's co-authors include S. Illek, H. Riechert, A. Yu. Egorov, B. Stegmüller, F. Höhnsdorf, Thomas Wolf, W. Stolz, J. Koch, K. David and R. Geßner and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Nanotechnology.

In The Last Decade

B. Borchert

46 papers receiving 847 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Borchert Germany 18 865 726 188 62 48 49 919
A. Kasukawa Japan 18 1.1k 1.2× 778 1.1× 67 0.4× 77 1.2× 36 0.8× 139 1.1k
D. Livshits Russia 15 935 1.1× 916 1.3× 105 0.6× 64 1.0× 92 1.9× 45 999
W. T. Beard United States 12 505 0.6× 560 0.8× 73 0.4× 46 0.7× 89 1.9× 24 660
W. I. Wang United States 16 529 0.6× 658 0.9× 98 0.5× 50 0.8× 95 2.0× 36 724
N.E. Harff United States 10 369 0.4× 407 0.6× 116 0.6× 31 0.5× 40 0.8× 17 548
S. Chaudhuri United States 12 329 0.4× 606 0.8× 100 0.5× 40 0.6× 147 3.1× 24 678
John P. Loehr United States 14 395 0.5× 429 0.6× 53 0.3× 64 1.0× 68 1.4× 48 510
Tsuguo Inata Japan 16 693 0.8× 821 1.1× 60 0.3× 31 0.5× 72 1.5× 32 860
S. Hansmann Germany 14 737 0.9× 534 0.7× 34 0.2× 45 0.7× 74 1.5× 46 862
G. Danan United States 6 258 0.3× 563 0.8× 120 0.6× 41 0.7× 104 2.2× 10 574

Countries citing papers authored by B. Borchert

Since Specialization
Citations

This map shows the geographic impact of B. Borchert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Borchert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Borchert more than expected).

Fields of papers citing papers by B. Borchert

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Borchert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Borchert. The network helps show where B. Borchert may publish in the future.

Co-authorship network of co-authors of B. Borchert

This figure shows the co-authorship network connecting the top 25 collaborators of B. Borchert. A scholar is included among the top collaborators of B. Borchert based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Borchert. B. Borchert is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Houdré, R., et al.. (2002). Microcavity light emitting diodes as efficient planar light emitters for telecommunication applications. Comptes Rendus Physique. 3(1). 3–14. 4 indexed citations
2.
3.
Borchert, B.. (2002). Predicate classes and promise classes. 235–241. 3 indexed citations
4.
Illek, S., B. Borchert, A. Yu. Egorov, & H. Riechert. (2002). Low threshold current operation of 1.3 μm GaInNAs/GaAs laser diodes. 1. 125–126.
5.
Illek, S., B. Borchert, G. Ebbinghaus, A. Yu. Egorov, & H. Riechert. (2002). GaInNAs/GaAs multiple quantum-wells (MQWs) for 1.3 μm laser applications. 537–540. 1 indexed citations
6.
Illek, S., et al.. (2000). Low threshold lasing operation of narrow stripeoxide-confinedGaInNAs/GaAs multiquantum well lasers at 1.28 µm. Electronics Letters. 36(8). 725–726. 33 indexed citations
7.
Borchert, B., A. Yu. Egorov, S. Illek, & H. Riechert. (2000). Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes. IEEE Photonics Technology Letters. 12(6). 597–599. 50 indexed citations
8.
Steinmann, Philipp, B. Borchert, & B. Stegmüller. (1997). Improved behavior of monolithically integrated laser/modulator by modified identical active layer structure. IEEE Photonics Technology Letters. 9(12). 1561–1563. 10 indexed citations
9.
Achtenhagen, M., R. O. Miles, B. Borchert, & F. K. Reinhart. (1996). Experimental observation of self-pulsations in complex-coupled DFB laser diodes. Electronics Letters. 32(6). 554–556. 1 indexed citations
10.
Amann, M.-C., et al.. (1996). Widely tunable laser diodes with tapered index perturbationsfor reduced internal reflections and improved wavelength access. Electronics Letters. 32(3). 221–222. 1 indexed citations
11.
Borchert, B., et al.. (1995). Dynamics and stability of complex-coupled DFB lasers with absorptive gratings. IEEE Journal of Quantum Electronics. 31(8). 1432–1442. 10 indexed citations
12.
Wolf, Thomas, et al.. (1994). Extended continuous tuning range (over 10 nm) of tunable twin-guide lasers. Conference on Lasers and Electro-Optics. 3 indexed citations
13.
Borchert, B., et al.. (1994). Vertically integrated Mach-Zehnder interferometer(VMZ) widely tunable laser diodewith improved wavelength access. Electronics Letters. 30(24). 2047–2049. 5 indexed citations
14.
Borchert, B., et al.. (1994). Dynamic behaviour of complex-coupled DFB laserswith in-phase absorptive grating. Electronics Letters. 30(1). 39–40. 16 indexed citations
15.
Wolf, Thomas, et al.. (1993). Tunable twin-guide lasers with improved performance fabricated by metal-organic vapor phase epitaxy. IEEE Photonics Technology Letters. 5(3). 273–275. 9 indexed citations
16.
Borchert, B., B. Stegmüller, & R. Geßner. (1993). Fabrication and characteristics of improved strained quantum-well GaInAlAs gain-coupled DFB lasers. Electronics Letters. 29(2). 210–211. 19 indexed citations
17.
Stegmüller, B., B. Borchert, & R. Geßner. (1993). 1.57 mu m strained-layer quantum-well GaInAlAs ridge-waveguide laser diodes with high temperature (130 degrees C) and ultrahigh-speed (17 GHz) performance. IEEE Photonics Technology Letters. 5(6). 597–599. 26 indexed citations
18.
Borchert, B., et al.. (1991). High Performance 1.55 µm Quantum-Well Metal-Clad Ridge-Waveguide Distributed Feedback Lasers. Japanese Journal of Applied Physics. 30(9B). L1650–L1650. 6 indexed citations
19.
Borchert, B. & G. Dorda. (1988). Hot-electron effects on short-channel MOSFETs determined by the piezoresistance effect. IEEE Transactions on Electron Devices. 35(4). 483–488. 22 indexed citations
20.
Borchert, B., K.R. Hofmann, & G. Dorda. (1983). Positive and negative charge generation by hot carriers in n -MOSFETs. Electronics Letters. 19(18). 746–747. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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