J. T. McKinley

583 total citations
38 papers, 437 citations indexed

About

J. T. McKinley is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Surfaces, Coatings and Films. According to data from OpenAlex, J. T. McKinley has authored 38 papers receiving a total of 437 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Atomic and Molecular Physics, and Optics, 20 papers in Electrical and Electronic Engineering and 15 papers in Surfaces, Coatings and Films. Recurrent topics in J. T. McKinley's work include Electron and X-Ray Spectroscopy Techniques (15 papers), Semiconductor materials and interfaces (14 papers) and Surface and Thin Film Phenomena (13 papers). J. T. McKinley is often cited by papers focused on Electron and X-Ray Spectroscopy Techniques (15 papers), Semiconductor materials and interfaces (14 papers) and Surface and Thin Film Phenomena (13 papers). J. T. McKinley collaborates with scholars based in United States, Switzerland and Italy. J. T. McKinley's co-authors include G. Margaritondo, R. Zanoni, M. N. Piancaśtelli, N. H. Tolk, D. Kilday, Antoine Kahn, Y. Hwu, K. Stiles, C. Coluzza and M. K. Kelly and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. T. McKinley

35 papers receiving 427 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. T. McKinley United States 13 323 271 104 85 73 38 437
Tatsuo Yokotsuka Japan 11 319 1.0× 155 0.6× 123 1.2× 66 0.8× 61 0.8× 28 384
Youiti Yamamoto Japan 11 358 1.1× 129 0.5× 147 1.4× 84 1.0× 80 1.1× 19 448
T.L. van Rooy Netherlands 8 399 1.2× 230 0.8× 188 1.8× 126 1.5× 75 1.0× 8 499
L. S. O. Johansson Sweden 13 362 1.1× 237 0.9× 146 1.4× 132 1.6× 59 0.8× 22 496
G. E. Franklin United States 12 467 1.4× 197 0.7× 124 1.2× 112 1.3× 55 0.8× 17 547
S. M. Mokler United Kingdom 14 273 0.8× 345 1.3× 101 1.0× 154 1.8× 50 0.7× 32 476
E. S. Hirschorn United States 9 386 1.2× 185 0.7× 69 0.7× 148 1.7× 52 0.7× 18 472
K. D. Jamison United States 10 236 0.7× 122 0.5× 75 0.7× 155 1.8× 66 0.9× 35 394
William E. Packard United States 10 410 1.3× 178 0.7× 113 1.1× 164 1.9× 87 1.2× 20 554
A. Zinner Germany 7 446 1.4× 263 1.0× 46 0.4× 151 1.8× 79 1.1× 7 540

Countries citing papers authored by J. T. McKinley

Since Specialization
Citations

This map shows the geographic impact of J. T. McKinley's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. T. McKinley with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. T. McKinley more than expected).

Fields of papers citing papers by J. T. McKinley

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. T. McKinley. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. T. McKinley. The network helps show where J. T. McKinley may publish in the future.

Co-authorship network of co-authors of J. T. McKinley

This figure shows the co-authorship network connecting the top 25 collaborators of J. T. McKinley. A scholar is included among the top collaborators of J. T. McKinley based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. T. McKinley. J. T. McKinley is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Weber, Heiner, et al.. (1996). Ablation in teeth with the free-electron laser around the absorption peak of hydroxyapatite (9.5 μm) and between 6.0 and 7.5 μm. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2672. 181–181. 6 indexed citations
2.
Ueda, Akira, R. G. Albridge, A. Bürger, et al.. (1995). Wavelength-selective laser ablation of diamond using hydrogen-impurity vibration modes. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 100(2-3). 427–430. 3 indexed citations
3.
Tolk, N. H., J. T. McKinley, & G. Margaritondo. (1995). FREE-ELECTRON LASER SPECTROSCOPY OF SURFACES AND INTERFACES. Surface Review and Letters. 2(4). 501–512. 4 indexed citations
4.
Margaritondo, G., C. Coluzza, J. L. Staehli, et al.. (1994). First experimental programs with the free electron laser. Journal de Physique IV (Proceedings). 4(C9). C9–357.
5.
McKinley, J. T., R. G. Albridge, Akira Ueda, et al.. (1993). Free-electron laser internal photoemission measurements of heterojunction band discontinuities. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(4). 1614–1616. 7 indexed citations
6.
Tolk, N. H., R. G. Albridge, J. T. McKinley, et al.. (1993). <title>Semiconductor spectroscopy and ablation processes with the Vanderbilt FEL</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1854. 60–68.
7.
Margaritondo, G., J. T. McKinley, D. Rioux, & David W. Niles. (1992). Understanding and controlling semiconductor interfaces: spectroscopy and spectromicroscopy. Applied Surface Science. 56-58. 713–722. 4 indexed citations
8.
McKinley, J. T., Y. Hwu, Benjamin E. C. Koltenbah, et al.. (1991). Control of Ge homojunction band offsets via ultrathin Ga–As dipole layers. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 9(3). 917–921. 19 indexed citations
9.
McKinley, J. T., Y. Hwu, D. Rioux, et al.. (1990). Controlled modification of heterojunction band lineups by diffusive intralayers. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 8(3). 1917–1921. 14 indexed citations
10.
Niles, David W., Ming Tang, J. T. McKinley, R. Zanoni, & G. Margaritondo. (1990). From heterojunction interfaces to metal-semiconductor interfaces. Applied Surface Science. 41-42. 139–143. 3 indexed citations
11.
Piancaśtelli, M. N., R. Zanoni, J. T. McKinley, & G. Margaritondo. (1990). Low-temperature pyridine adsorption on cleaved silicon: a synchrotron radiation photoemission study. Solid State Communications. 75(4). 285–287.
12.
Mao, D., K.K. Young, Antoine Kahn, et al.. (1989). Photoemission study ofCaF2- andSrF2-GaAs(110) interfaces formed at room temperature. Physical review. B, Condensed matter. 39(17). 12735–12742. 11 indexed citations
13.
Kahn, Antoine, K. Stiles, D. Mao, et al.. (1989). Formation of schottky barriers on GaAs(110): from adsorbate-lnduced gap states to interface metallicity. Journal of Electronic Materials. 18(1). 33–37. 4 indexed citations
14.
Zanoni, R., M. N. Piancaśtelli, J. T. McKinley, & G. Margaritondo. (1989). Synchrotron radiation induced metal deposition on semiconductors: Mo(CO)6 on Si (111). Applied Physics Letters. 55(10). 1020–1022. 29 indexed citations
15.
Davis, Glyn, W. Beck, D. Kilday, J. T. McKinley, & G. Margaritondo. (1989). Effects of thin interlayers on Ag/(HgCd)Te interface behavior. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 7(3). 870–874. 5 indexed citations
16.
Niles, David W., Ming Tang, J. T. McKinley, R. Zanoni, & G. Margaritondo. (1988). Schottky-like correction terms in heterojunction band lineups. Physical review. B, Condensed matter. 38(15). 10949–10952. 20 indexed citations
17.
Stiles, K., Antoine Kahn, D. Kilday, J. T. McKinley, & G. Margaritondo. (1988). E F pinning at the Sn/GaAs(110) interface. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(3). 1462–1465. 13 indexed citations
18.
Niles, David W., J. T. McKinley, G. Margaritondo, et al.. (1987). Summary Abstract: A nondestructive synchrotron radiation photoemission study of the band lineup for buried GaSb–AlSb interfaces. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(4). 1286–1287. 5 indexed citations
19.
Piancaśtelli, M. N., R. Zanoni, M. K. Kelly, et al.. (1987). Thiophene on Si(111)2×1: Synchrotron radiation study of a desulfurization process. Solid State Communications. 63(2). 85–89. 15 indexed citations
20.
Piancaśtelli, M. N., M. K. Kelly, Y. A. Chang, J. T. McKinley, & G. Margaritondo. (1987). Benzene adsorption on low-temperature silicon: A synchrotron-radiation photoemission study of valence and core states. Physical review. B, Condensed matter. 35(17). 9218–9221. 26 indexed citations

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