V. D. Mattera

509 total citations
34 papers, 343 citations indexed

About

V. D. Mattera is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Instrumentation. According to data from OpenAlex, V. D. Mattera has authored 34 papers receiving a total of 343 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 23 papers in Atomic and Molecular Physics, and Optics and 6 papers in Instrumentation. Recurrent topics in V. D. Mattera's work include Semiconductor Quantum Structures and Devices (21 papers), Photonic and Optical Devices (15 papers) and Semiconductor Lasers and Optical Devices (10 papers). V. D. Mattera is often cited by papers focused on Semiconductor Quantum Structures and Devices (21 papers), Photonic and Optical Devices (15 papers) and Semiconductor Lasers and Optical Devices (10 papers). V. D. Mattera collaborates with scholars based in United States, Greece and Germany. V. D. Mattera's co-authors include William M. Risen, P. A. Garbinski, A. Antreasyan, B. Tell, K. Brown-Goebeler, R. E. Leibenguth, M. T. Asom, L. C. Luther, G. Livescu and J. L. Jewell and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

V. D. Mattera

33 papers receiving 325 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. D. Mattera United States 11 258 169 38 35 26 34 343
A. El Hdiy France 12 343 1.3× 95 0.6× 38 1.0× 23 0.7× 169 6.5× 56 415
B.T. Cavicchi United States 12 427 1.7× 168 1.0× 102 2.7× 31 0.9× 160 6.2× 32 559
Xiaoyun Liu China 10 132 0.5× 24 0.1× 32 0.8× 30 0.9× 186 7.2× 34 356
Victor K. F. Chia United States 10 208 0.8× 66 0.4× 41 1.1× 22 0.6× 59 2.3× 31 333
Shasha Zuo China 12 184 0.7× 21 0.1× 94 2.5× 25 0.7× 78 3.0× 17 322
Charusluk Viphavakit Thailand 12 377 1.5× 54 0.3× 305 8.0× 21 0.6× 55 2.1× 34 521
Kye Jin Jeon South Korea 9 137 0.5× 23 0.1× 166 4.4× 10 0.3× 61 2.3× 15 327
C. K. Chia Singapore 14 399 1.5× 296 1.8× 66 1.7× 16 0.5× 132 5.1× 38 521
Xinhang Li China 9 210 0.8× 99 0.6× 52 1.4× 19 0.5× 46 1.8× 30 307

Countries citing papers authored by V. D. Mattera

Since Specialization
Citations

This map shows the geographic impact of V. D. Mattera's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. D. Mattera with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. D. Mattera more than expected).

Fields of papers citing papers by V. D. Mattera

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. D. Mattera. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. D. Mattera. The network helps show where V. D. Mattera may publish in the future.

Co-authorship network of co-authors of V. D. Mattera

This figure shows the co-authorship network connecting the top 25 collaborators of V. D. Mattera. A scholar is included among the top collaborators of V. D. Mattera based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. D. Mattera. V. D. Mattera is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lee, Yong‐Hee, B. Tell, K. Brown-Goebeler, R. E. Leibenguth, & V. D. Mattera. (1991). Deep-red (770 nm) continuous-wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers. Conference on Lasers and Electro-Optics. 6 indexed citations
2.
Asom, M. T., G. Livescu, M. Geva, et al.. (1991). Comparison of delta doped GaAs grown by MBE and GSMBE using different arsenic species. Journal of Crystal Growth. 111(1-4). 246–251. 2 indexed citations
3.
Mattera, V. D., et al.. (1990). Monolithic InGaAs p-i-n InP metal-insulator-semiconductor field-effect transistor receiver for long-wavelength optical communications. Applied Physics Letters. 57(13). 1343–1344. 4 indexed citations
4.
Tell, B., K. Brown-Goebeler, J. L. Jewell, et al.. (1990). High efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers. Electronics Letters. 26(16). 1308–1310. 18 indexed citations
5.
Antreasyan, A., et al.. (1989). High-speed enhancement-mode InP MISFET's grown by chloride vapor-phase epitaxy. IEEE Transactions on Electron Devices. 36(2). 256–262. 9 indexed citations
6.
Hollenhorst, J. N., et al.. (1989). High Frequency Performance Of Planar InGaAs/InP Avalanche Photodiodes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 995. 53–53. 22 indexed citations
7.
Antreasyan, A., et al.. (1989). Monolithically integrated InGaAs-P-I-N InP-MISFET PINFET grown by chloride vapor phase epitaxy. IEEE Photonics Technology Letters. 1(6). 123–125. 8 indexed citations
8.
Geary, J., et al.. (1988). High bandwidth planar InP/InGaAs avalanche photodiodes. IEEE Transactions on Electron Devices. 35(12). 2434–2434. 8 indexed citations
9.
Chang, Robert P. H., B. Tell, Yusuke Ota, et al.. (1987). MONOLITHICALLY INTEGRATED RECEIVER FRONT-END: IN//0//. //5//3GA//0//. //4//7AS PIN-AMPLIFIER.. IEEE Transactions on Electron Devices. 35(11). 1439–1444. 1 indexed citations
10.
Antreasyan, A., P. A. Garbinski, V. D. Mattera, et al.. (1987). Gigahertz logic based on InP metal-insulator-semiconductor field-effect transistors by vapor phase epitaxy. IEEE Transactions on Electron Devices. 34(9). 1897–1901. 1 indexed citations
11.
Ger­hardt, Nils C., D.J. Muehlner, F. W. Ostermayer, et al.. (1987). Planar avalanche photodiode with a low-doped, reduced curvature junction. Applied Physics Letters. 50(17). 1158–1160. 4 indexed citations
12.
Antreasyan, A., et al.. (1987). High-speed enhancement mode InP MISFETs grown by Chloride vapor phase epitaxy. 611–614. 1 indexed citations
13.
Antreasyan, A., P. A. Garbinski, V. D. Mattera, H. Temkin, & J.H. Abeles. (1987). High-speed operation of InP metal-insulator-semiconductor field-effect transistors grown by chloride vapor phase epitaxy. Applied Physics Letters. 51(14). 1097–1099. 10 indexed citations
14.
Bethea, C. G., B. F. Levine, L. Marchut, V. D. Mattera, & L. J. Peticolas. (1986). Photon-counting optical time-domain reflectometer using a planar InGaAsP avalanche detector. Electronics Letters. 22(6). 302–303. 2 indexed citations
15.
Kamitsos, E. I., V. D. Mattera, Ward T. Robinson, & William M. Risen. (1986). Optical and vibrational properties and the crystal structures of molecular complexes: biphenyl-TCNQ and p-terphenyl-TCNQ. Journal of Molecular Structure. 143. 211–214. 2 indexed citations
16.
Mattera, V. D., et al.. (1986). High-speed InP/Ga0.47In0.53As superlattice avalanche photodiodes with very low background doping grown by continuous trichloride vapor-phase epitaxy. Journal of Applied Physics. 60(7). 2609–2612. 8 indexed citations
17.
Antreasyan, A., P. A. Garbinski, V. D. Mattera, N.J. Shah, & H. Temkin. (1986). Monolithically integrated enhancement-mode InP MISFET inverter. Electronics Letters. 22(19). 1014–1016. 4 indexed citations
18.
Mattera, V. D., et al.. (1986). A kinetic study of the catalytic oxidation of carbon monoxide over Nafion-supported rhodium, ruthenium and platinum. The Journal of Physical Chemistry. 90(20). 4819–4824. 14 indexed citations
19.
Mattera, V. D. & William M. Risen. (1986). Composition dependence of glass transition temperature of sulfonated‐polystrene ionomers. Journal of Polymer Science Part B Polymer Physics. 24(4). 753–760. 20 indexed citations
20.
Mattera, V. D., P.J. Squattrito, & William M. Risen. (1984). Chemistry of metals in ionomers: reactions of rhodium-PSSA with carbon monoxide, molecular hydrogen, and water. Inorganic Chemistry. 23(22). 3597–3601. 12 indexed citations

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