Z. Atzmon

442 total citations
26 papers, 373 citations indexed

About

Z. Atzmon is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, Z. Atzmon has authored 26 papers receiving a total of 373 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 8 papers in Computational Mechanics. Recurrent topics in Z. Atzmon's work include Semiconductor materials and devices (11 papers), Silicon and Solar Cell Technologies (10 papers) and Ion-surface interactions and analysis (8 papers). Z. Atzmon is often cited by papers focused on Semiconductor materials and devices (11 papers), Silicon and Solar Cell Technologies (10 papers) and Ion-surface interactions and analysis (8 papers). Z. Atzmon collaborates with scholars based in United States, Israel and Germany. Z. Atzmon's co-authors include Wayne D. Kaplan, J. W. Mayer, David J. Smith, M. Eizenberg, D. Chandrasekhar, F. Schäffler, R. L. Hervig, McD. Robinson, T. L. Alford and Alexander Katsman and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Materials Science.

In The Last Decade

Z. Atzmon

25 papers receiving 366 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Z. Atzmon United States 11 300 125 118 101 40 26 373
H. K. Liou United States 8 479 1.6× 170 1.4× 143 1.2× 169 1.7× 19 0.5× 11 515
K. Kyllesbech Larsen Denmark 11 242 0.8× 103 0.8× 125 1.1× 159 1.6× 91 2.3× 35 381
S. Prussin United States 8 487 1.6× 79 0.6× 162 1.4× 209 2.1× 59 1.5× 28 623
S. S. Mani United States 11 298 1.0× 138 1.1× 128 1.1× 79 0.8× 10 0.3× 30 487
A. Gurary United States 9 190 0.6× 48 0.4× 129 1.1× 86 0.9× 85 2.1× 24 363
M. Bartur United States 10 292 1.0× 111 0.9× 104 0.9× 300 3.0× 32 0.8× 22 414
H. Kräutle Germany 8 226 0.8× 96 0.8× 99 0.8× 242 2.4× 67 1.7× 14 353
Scott Roberts United States 10 185 0.6× 68 0.5× 120 1.0× 77 0.8× 20 0.5× 26 342
G. Regula France 12 344 1.1× 44 0.4× 181 1.5× 105 1.0× 24 0.6× 58 438
L. Nesbit United States 10 311 1.0× 74 0.6× 264 2.2× 78 0.8× 62 1.6× 14 452

Countries citing papers authored by Z. Atzmon

Since Specialization
Citations

This map shows the geographic impact of Z. Atzmon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Z. Atzmon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Z. Atzmon more than expected).

Fields of papers citing papers by Z. Atzmon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Z. Atzmon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Z. Atzmon. The network helps show where Z. Atzmon may publish in the future.

Co-authorship network of co-authors of Z. Atzmon

This figure shows the co-authorship network connecting the top 25 collaborators of Z. Atzmon. A scholar is included among the top collaborators of Z. Atzmon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Z. Atzmon. Z. Atzmon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Atzmon, Z., et al.. (2008). Detailed investigation of ultrasonic Al–Cu wire-bonds: I. Intermetallic formation in the as-bonded state. Journal of Materials Science. 43(18). 6029–6037. 47 indexed citations
2.
Atzmon, Z., et al.. (2007). Microstructural evolution of gold–aluminum wire-bonds. Journal of Materials Science. 42(7). 2347–2357. 27 indexed citations
3.
Atzmon, Z., et al.. (2007). TEM microstructural analysis of As-Bonded Al–Au wire-bonds. Journal of Materials Science. 42(7). 2334–2346. 35 indexed citations
4.
Atzmon, Z., et al.. (1998). Wet oxidation of amorphous Si0.67Ge0.25C0.08 grown on (100) Si substrates. Journal of Applied Physics. 83(5). 2835–2841. 5 indexed citations
5.
Culbertson, Robert, et al.. (1996). Strain measurements of SiGeC heteroepitaxial layers on Si(001) using ion beam analysis. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 14(2). 441–446. 10 indexed citations
6.
Brener, R., R. Beserman, M. Eizenberg, et al.. (1996). The effect of carbon on strain relaxation and phase formation in the Ti/Si1−x−yGexCy/Si contact system. Applied Physics Letters. 69(1). 64–66. 23 indexed citations
7.
Alford, T. L., et al.. (1996). An X-ray diffraction study of the strain and structure of SiGeC/(100)Si alloys. Materials Chemistry and Physics. 46(2-3). 283–287. 3 indexed citations
8.
Atzmon, Z., et al.. (1996). Comparison of elastic resonance and elastic recoil detection in the quantification of carbon in SiGeC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 118(1-4). 274–277. 2 indexed citations
9.
Corbett, J. W., et al.. (1995). The gettering of copper by keV implantation of germanium into silicon. Journal of Applied Physics. 78(5). 3012–3014. 1 indexed citations
10.
Atzmon, Z., et al.. (1995). Wet Oxidation of Si1-x-yGexCy Layers on (100) Si. MRS Proceedings. 398. 1 indexed citations
11.
Atzmon, Z., et al.. (1995). Wet oxidation of amorphous and crystalline Si1−x−yGexCy alloys grown on (100)Si substrates. Applied Physics Letters. 66(17). 2244–2246. 14 indexed citations
12.
Atzmon, Z., M. Eizenberg, Yosi Shacham‐Diamand, J. W. Mayer, & F. Schäffler. (1994). Low-dose implantation of Sb in Si1−xGex epitaxial layers: Correlation between electrical properties and radiation damage. Journal of Applied Physics. 75(1). 377–381. 14 indexed citations
13.
Atzmon, Z., Renu Sharma, Stephen W. Russell, & J. W. Mayer. (1994). Kinetics of Copper Grain Growth During Nitridation of Cu-Cr and Cu-Ti Thin Films by In Situ Tem. MRS Proceedings. 337. 2 indexed citations
14.
Atzmon, Z., M. Eizenberg, Yosi Shacham‐Diamand, J. W. Mayer, & F. Schäffler. (1994). Solid-phase epitaxial regrowth of Sb-implanted Si1−xGex strained layers: Kinetics and electrical properties. Journal of Applied Physics. 75(8). 3936–3943. 5 indexed citations
15.
Atzmon, Z., J. W. Mayer, D. Chandrasekhar, et al.. (1994). Chemical vapor deposition of heteroepitaxial Si1−x−yGexCy films on (100)Si substrates. Applied Physics Letters. 65(20). 2559–2561. 64 indexed citations
16.
Atzmon, Z., et al.. (1993). Regrowth and strain recovery of Sb implanted Si1−Ge strained layers. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 80-81. 751–754. 4 indexed citations
17.
Xu, Mai, Z. Atzmon, A. Schröer, B. J. Wilkens, & J. W. Mayer. (1993). Visualization of Ion Channeling of (100)Si and Si1-xGex Epitaxial Grown Layers on Silicon. MRS Proceedings. 316. 1 indexed citations
18.
Sharma, Renu, et al.. (1993). In Situ Studies of Nitridation of Cu/Ti Thin Films Using Environmental Cell in Transmission Electron Microscopy. MRS Proceedings. 317. 1 indexed citations
19.
Atzmon, Z., M. Eizenberg, Yosi Shacham‐Diamand, J. W. Mayer, & F. Schäffler. (1992). Electrical properties of Sb implanted Si1−xGex alloy layers. Applied Physics Letters. 61(24). 2902–2904. 7 indexed citations
20.
Atzmon, Z., et al.. (1992). Epitaxial regrowth of Sb implanted Si1−xGex alloy layers. Applied Physics Letters. 60(18). 2243–2245. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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