Shijie Pan

473 total citations
51 papers, 333 citations indexed

About

Shijie Pan is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Shijie Pan has authored 51 papers receiving a total of 333 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 17 papers in Condensed Matter Physics and 10 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Shijie Pan's work include Semiconductor materials and devices (21 papers), GaN-based semiconductor devices and materials (17 papers) and Silicon Carbide Semiconductor Technologies (14 papers). Shijie Pan is often cited by papers focused on Semiconductor materials and devices (21 papers), GaN-based semiconductor devices and materials (17 papers) and Silicon Carbide Semiconductor Technologies (14 papers). Shijie Pan collaborates with scholars based in China, United Kingdom and United States. Shijie Pan's co-authors include D. Chin, Shiwei Feng, Adam Brand, Kun Bai, Xiang Zheng, Yamin Zhang, Chaofeng Li, Huajie Huang, Yang Chen and Lu Yang and has published in prestigious journals such as Applied Physics Letters, Chemistry - A European Journal and The Journal of Physical Chemistry A.

In The Last Decade

Shijie Pan

45 papers receiving 321 citations

Peers

Shijie Pan
Chuan Xu China
Hiroshi Tadano Japan
Chengmin Li China
Wanling Deng China
Tian Lan China
Preeti Gupta India
Tomoyuki Suwa Japan
K. Motohashi Japan
Chuan Xu China
Shijie Pan
Citations per year, relative to Shijie Pan Shijie Pan (= 1×) peers Chuan Xu

Countries citing papers authored by Shijie Pan

Since Specialization
Citations

This map shows the geographic impact of Shijie Pan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shijie Pan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shijie Pan more than expected).

Fields of papers citing papers by Shijie Pan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shijie Pan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shijie Pan. The network helps show where Shijie Pan may publish in the future.

Co-authorship network of co-authors of Shijie Pan

This figure shows the co-authorship network connecting the top 25 collaborators of Shijie Pan. A scholar is included among the top collaborators of Shijie Pan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shijie Pan. Shijie Pan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yu, Cui, Shiwei Feng, Zhihong Feng, et al.. (2025). Advanced thermal boundary resistance measurement techniques for thick-film diamond heterostructures. Applied Physics Letters. 126(1).
2.
Feng, Z.C., et al.. (2025). γ-irradiation induced trapping effects on off-state and on-state p-GaN Gate high-electron-mobility transistors. Materials Science in Semiconductor Processing. 198. 109799–109799. 1 indexed citations
3.
Feng, Shiwei, et al.. (2024). Workload variation compensation optimization of ring oscillator temperature measurement method and its application in field-programmable gate array. Microelectronics Journal. 156. 106545–106545. 1 indexed citations
4.
Pan, Shijie, et al.. (2024). An improved energy wear model of three-dimensional ball-plane contact structure and its fretting wear dynamic behaviors study. Wear. 550-551. 205405–205405. 10 indexed citations
5.
Feng, Shiwei, et al.. (2024). Automatic in-situ measurement of thermal resistance for GaN HEMTs. Microelectronics Journal. 149. 106245–106245. 2 indexed citations
6.
Pan, Shijie, et al.. (2024). Enones from aldehydes and alkenes by carbene-catalyzed dehydrogenative couplings. Chinese Chemical Letters. 35(9). 109495–109495. 12 indexed citations
7.
Pan, Shijie, et al.. (2024). N‐Heterocyclic Carbene Enabled Functionalization of Inert C(Sp3)−H Bonds via Hydrogen Atom Transfer (HAT) Processes. Chemistry - A European Journal. 30(47). e202401811–e202401811. 9 indexed citations
8.
Feng, Z.C., Shiwei Feng, Shijie Pan, et al.. (2024). Investigation of Electrical Characteristics and Trapping Effects in p-GaN Gate HEMTs Under Electron Irradiation. IEEE Transactions on Electron Devices. 71(8). 4543–4548. 1 indexed citations
9.
Pan, Shijie, Yamin Zhang, Shiwei Feng, et al.. (2023). Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs. IEEE Transactions on Electron Devices. 70(7). 3475–3482. 8 indexed citations
10.
Pan, Shijie, Shiwei Feng, Kun Bai, et al.. (2023). A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage. IEEE Transactions on Instrumentation and Measurement. 73. 1–12. 2 indexed citations
11.
Feng, Shiwei, Zhihong Feng, Shijie Pan, et al.. (2023). A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor. Applied Physics Letters. 122(7). 4 indexed citations
12.
Feng, Shiwei, et al.. (2023). Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors Under Reverse Pulse Electrical Stress Using the Voltage-Transient Method. IEEE Transactions on Device and Materials Reliability. 23(2). 257–262. 2 indexed citations
13.
Pan, Shijie, Shiwei Feng, Kun Bai, et al.. (2022). Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy. Semiconductor Science and Technology. 37(9). 95017–95017. 3 indexed citations
14.
Pan, Shijie, et al.. (2022). Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method. IEEE Transactions on Electron Devices. 69(9). 4877–4882. 11 indexed citations
15.
Pan, Shijie, et al.. (2021). Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method. IEEE Transactions on Electron Devices. 68(11). 5541–5546. 12 indexed citations
16.
Pan, Shijie, et al.. (2021). Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors. IEEE Transactions on Device and Materials Reliability. 21(4). 494–499. 5 indexed citations
17.
Pan, Shijie, et al.. (2021). Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method. IEEE Transactions on Electron Devices. 68(8). 3968–3973. 8 indexed citations
18.
Feng, Shiwei, Zhihong Feng, Yuanjie Lv, et al.. (2021). Characterization of thermal-resistance in Ga 2 O 3 Schottky barrier diodes with temperature-sensitive electrical parameters. Semiconductor Science and Technology. 36(11). 115010–115010. 3 indexed citations
19.
Pan, Shijie, et al.. (2021). Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method. Semiconductor Science and Technology. 36(9). 95011–95011. 8 indexed citations
20.
Feng, Shiwei, Yamin Zhang, Kun Bai, et al.. (2020). A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage. IEEE Transactions on Electron Devices. 67(12). 5454–5459. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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