J.C. Oberlin

761 citations

41 papers · 617 indexed · h-index 15

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces
Surfaces, Coatings and Films top 10%

Papers in

Surfaces, Coatings and Films 5
- Electron and X-Ray Spectroscopy Techniques 4
Electronic, Optical and Magnetic Materials 11
- Copper Interconnects and Reliability 11

Co-authors: A. Pério Y. Campidelli F. Arnaud d’Avitaya J. A. Chroboczek R. A. B. Devine A. Golański Y. Pauleau F. Gaspard
Journals: Applied Surface Science (6 papers)Applied Physics Letters (5 papers)Journal of Applied Physics (4 papers)Thin Solid Films (3 papers)Microelectronic Engineering (2 papers)
Partner nations: France Algeria Netherlands

In The Last Decade

J.C. Oberlin

39 papers receiving 578 citations

Peers

Countries citing papers authored by J.C. Oberlin

Since Specialization

Citations

This map shows the geographic impact of J.C. Oberlin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.C. Oberlin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.C. Oberlin more than expected).

Fields of papers citing papers by J.C. Oberlin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.C. Oberlin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.C. Oberlin. The network helps show where J.C. Oberlin may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J.C. Oberlin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.C. Oberlin Line = papers co-authored together J.C. Oberlin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Monitoring of the thermal annealing of HDP-Si oxides by positron annihilation and thermal desorption spectrometry Microelectronic Engineering ·H. Schut, A. van Veen, L. V. Jørgensen, Tekolla Belaineh, Абрамов Дмитрий Александрович, A. H. Reader, J.C. Oberlin	1997	1
2	Preparation of low resistivity tungsten thin films deposited by microwave-plasma-enhanced chemical vapour deposition from the tungsten hexafluoride-hydrogen system Thin Solid Films ·A. Belkacem, Y. Arnal, Jacques Pelletier, E. André, J.C. Oberlin	1994	2
3	Low pressure microwave electron cyclotron resonance plasma deposition of amorphous Ta2O5 films Applied Physics Letters ·Muentes Sornoza, J.C. Oberlin, R. A. B. Devine	1994	40
4	Millitorr range PECVD of a-SiO2 films using TEOS and oxygen Thin Solid Films ·François Templier, Clara Serrano‐Moreno, R. Madar, J.C. Oberlin, R. A. B. Devine	1994	19
5	Influence of epitaxy on the low temperature silicon diffusion through gold layers Applied Surface Science ·A. Cros, H. Dallaporta, J.C. Oberlin	1992	4
6	The role of self diffusion in the dry development and plasma durability of polymers Microelectronic Engineering ·Patrick J. Paniez, Harold Patricio, Marie‐Noëlle Pons, J.C. Oberlin, I Hösli, Nanang Fakhrur Rozi, Jacques Pelletier, 吴鹏辉	1991	2
7	Preparation of copper thin films at ambient temperature by microwave plasma-enhanced chemical vapor deposition from the copper (II) acetylacetonate-argon-hydrogen system Journal of Applied Physics ·Jacques Pelletier, R. Pantel, J.C. Oberlin, Y. Pauleau, Sanghamitra Jena	1991	21
8	Electronic defects induced in silicon by SF6 plasma etching Materials Science and Engineering B ·A. Belkacem, E. André, J.C. Oberlin, C. Pomot, B. Pajot, A. Chantre	1989	7
9	Fabrication and structure of epitaxial Er silicide films on (111) Si Applied Physics Letters ·F. Arnaud d’Avitaya, A. Pério, J.C. Oberlin, Y. Campidelli, J. A. Chroboczek	1989	100
10	High quality silicon-on-insulator structure formed by oxygen implantation and lamp annealing Applied Physics Letters ·D.P. Vu, M. Haond, C. d’Anterroches, J.C. Oberlin, A. Golański, J.J. Grob, Safa Sreiri	1988	7
11	Redistribution of dopants during silicide formation - relevance of silicide diffusion versus main moving species Karen Maex, Luc Van den hove, Anthony Charles McLaughlan, J.C. Oberlin, A. Pério, J. Torrès, G. Bomchil, Mildred Middlemiss Veltri	1987	1
12	Influence of H on the recrystallization of amorphous Si layers Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·J.C. Oberlin, E. Ligeon, Takayoshi Hamada, A.C. Chami	1987	10
13	Characterization of the silicon-on-insulator material formed by high-dose oxygen implantation using spectroscopic ellipsometry Journal of Applied Physics ·F. Ferrieu, D.P. Vu, C. d’Anterroches, J.C. Oberlin, Safa Sreiri, J.J. Grob	1987	17
14	Correlation between the elastic and structural properties of thin-film tungsten silicide layers from surface acoustic wave analysis Applied Physics Letters ·G.M. Crean, A. Golański, J.C. Oberlin, A. Pério	1987	1
15	The Influence of Thin Film Microstructure on Surface Acoustic Wave Velocity G.M. Crean, Michael G. Somekh, A. Golański, J.C. Oberlin	1987	1
16	Defects created by self-implantation in Si as a function of temperature and fluence Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Takayoshi Hamada, E. Ligeon, A. Bourret, A.C. Chami, J.C. Oberlin	1986	12
17	Alpha particle stopping cross sections of Cu and Au at energies below 3 MeV Nuclear Instruments and Methods in Physics Research ·J.P. Stoquert, A. Abdesselam, 尹炳强 Yin Bingqiang, Y. Boudouma, J.C. Oberlin	1982	6
18	Stopping power and straggling of 0.2-2.0 MeV protons and 0.3-3.1 MeV 4He ions in erbium Journal de physique ·J.C. Oberlin, Ryan S. Kwon, Erich Schwerdtfeger, J.P. Stoquert, R. Perrier de la Bâthie	1982	6
19	An improved method for the shape analysis of backscattering spectra Nuclear Instruments and Methods ·J.P. Stoquert, Ryan S. Kwon, Erich Schwerdtfeger, J.C. Oberlin	1981	9
20	Energy loss and straggling of 0.25–2.8 MeV⁴He⁺ions in gadolinium Radiation Effects ·J.C. Oberlin, Ryan S. Kwon, Erich Schwerdtfeger, Jin-qiu Zhang, R. Perrier de la Bâthie, J.P. Stoquert	1980	2

About J.C. Oberlin

J.C. Oberlin is a scholar working on Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Mechanics of Materials and Electrical and Electronic Engineering, having authored 41 papers that have together received 617 indexed citations. Recurring topics across this work include Semiconductor materials and devices (15 papers), Semiconductor materials and interfaces (14 papers), Copper Interconnects and Reliability (11 papers), Silicon and Solar Cell Technologies (9 papers), Metal and Thin Film Mechanics (9 papers), Ion-surface interactions and analysis (5 papers), Intermetallics and Advanced Alloy Properties (5 papers) and Electron and X-Ray Spectroscopy Techniques (4 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (254 citations), Surfaces, Coatings and Films (54 citations), Electrical and Electronic Engineering (400 citations), Materials Chemistry (241 citations) and Electronic, Optical and Magnetic Materials (80 citations). J.C. Oberlin has collaborated with scholars based in France, Algeria and Netherlands. Frequent co-authors include A. Pério, Y. Campidelli, F. Arnaud d’Avitaya, J. A. Chroboczek, R. A. B. Devine, A. Golański, Y. Pauleau, F. Gaspard, A. Bsiesy and R. Hérino. Their work appears in journals such as Applied Surface Science, Applied Physics Letters, Journal of Applied Physics, Thin Solid Films and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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