G. Bomchil

3.2k total citations · 1 hit paper
53 papers, 2.6k citations indexed

About

G. Bomchil is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, G. Bomchil has authored 53 papers receiving a total of 2.6k indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Materials Chemistry, 35 papers in Electrical and Electronic Engineering and 22 papers in Biomedical Engineering. Recurrent topics in G. Bomchil's work include Silicon Nanostructures and Photoluminescence (31 papers), Semiconductor materials and devices (23 papers) and Nanowire Synthesis and Applications (21 papers). G. Bomchil is often cited by papers focused on Silicon Nanostructures and Photoluminescence (31 papers), Semiconductor materials and devices (23 papers) and Nanowire Synthesis and Applications (21 papers). G. Bomchil collaborates with scholars based in France, United States and Germany. G. Bomchil's co-authors include R. Hérino, K. Barla, A. Halimaoui, Caroline Bertrand, J. L. Ginoux, J. C. Pfister, F. Gaspard, M. Ligeon, Frank Müller and A. Bsiesy and has published in prestigious journals such as The Journal of Chemical Physics, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

G. Bomchil

51 papers receiving 2.5k citations

Hit Papers

Porosity and Pore Size Distributions of Porous Silicon La... 1987 2026 2000 2013 1987 100 200 300 400

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Bomchil France 23 2.2k 1.9k 1.8k 454 86 53 2.6k
F. Koch Germany 34 3.5k 1.6× 3.2k 1.6× 2.3k 1.3× 1.6k 3.6× 34 0.4× 172 4.7k
Kelly P. Knutsen United States 9 1.5k 0.7× 1.2k 0.6× 1.1k 0.6× 732 1.6× 47 0.5× 10 2.5k
D. J. Robbins United Kingdom 28 1.6k 0.7× 1.4k 0.7× 355 0.2× 810 1.8× 36 0.4× 61 2.2k
D. Kovalev Germany 32 2.6k 1.2× 1.7k 0.9× 1.8k 1.0× 717 1.6× 42 0.5× 84 3.1k
M. Cazzanelli Italy 24 1.5k 0.7× 1.3k 0.7× 1.1k 0.6× 811 1.8× 13 0.2× 61 2.2k
F. Koch Germany 26 1.5k 0.7× 1.4k 0.7× 869 0.5× 718 1.6× 10 0.1× 88 2.3k
R. M. Biefeld United States 27 731 0.3× 1.6k 0.8× 258 0.1× 1.4k 3.0× 112 1.3× 138 2.2k
Anton Köck Austria 28 1.1k 0.5× 1.8k 1.0× 601 0.3× 485 1.1× 30 0.3× 95 2.5k
J. R. Engstrom United States 30 1.3k 0.6× 1.6k 0.8× 340 0.2× 752 1.7× 31 0.4× 96 2.5k
T.S. Jones United Kingdom 33 1.1k 0.5× 1.8k 0.9× 467 0.3× 2.4k 5.2× 72 0.8× 122 3.0k

Countries citing papers authored by G. Bomchil

Since Specialization
Citations

This map shows the geographic impact of G. Bomchil's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Bomchil with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Bomchil more than expected).

Fields of papers citing papers by G. Bomchil

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Bomchil. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Bomchil. The network helps show where G. Bomchil may publish in the future.

Co-authorship network of co-authors of G. Bomchil

This figure shows the co-authorship network connecting the top 25 collaborators of G. Bomchil. A scholar is included among the top collaborators of G. Bomchil based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Bomchil. G. Bomchil is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Goudeau, P., et al.. (1995). Correlation between the Porous Silicon Morphology and the Photoluminescence Efficiency. physica status solidi (b). 190(1). 63–68. 3 indexed citations
2.
Goudeau, P., et al.. (1992). Characterization of photoluminescent porous Si by small-angle scattering of x rays. Applied Physics Letters. 60(21). 2625–2627. 49 indexed citations
3.
Regolini, J.L., M. Gauneau, J. Mercier, et al.. (1991). Aspects of the selective deposition of TiSi2 by LRP-CVD for use in ULSI submicron technology. Applied Surface Science. 53. 18–23. 9 indexed citations
4.
Bomchil, G., A. Halimaoui, & R. Hérino. (1990). Porous silicon: The material and its applications in silicon-on-insulator technologies. Applied Surface Science. 41-42. 604–613. 89 indexed citations
5.
Regolini, J.L., D. Bensahel, G. Bomchil, & J. Mercier. (1989). Selective layers of TiSi2 deposited without substrate consumption in a cold wall LPCVD reactor. Applied Surface Science. 38(1-4). 408–415. 20 indexed citations
6.
Maex, Karen, Luc Van den hove, J.C. Oberlin, et al.. (1987). Redistribution of dopants during silicide formation - relevance of silicide diffusion versus main moving species. 42(236). 95–97. 1 indexed citations
7.
Haond, M., G. Bomchil, D. Bensahel, et al.. (1987). Electrical Parameters of SOI Material Obtained by ZMR and Oxidized Porous Silicon. European Solid-State Device Research Conference. 385–390. 3 indexed citations
8.
Barla, K., et al.. (1987). SOI technology using buried layers of oxidized porous Si. IEEE Circuits and Devices Magazine. 3(6). 11–15. 9 indexed citations
9.
Barla, K., et al.. (1987). The kinetics and mechanism of oxide layer formation from porous silicon formed on p-Si substrates. Journal of Applied Physics. 62(3). 1042–1048. 100 indexed citations
10.
Barla, K., et al.. (1986). Characteristics of SOI CMOS circuits made in n/n + /n oxidised porous silicon structures. Electronics Letters. 22(24). 1291–1293. 20 indexed citations
11.
Hérino, R., A. Pério, K. Barla, & G. Bomchil. (1984). Microstructure of Porous silicon and its evolution with temperature. Materials Letters. 2(6). 519–523. 95 indexed citations
12.
Bomchil, G., et al.. (1984). Response to “Comment on ‘Pore Size Distribution in Porous Silicon Studied by Adsorption Isotherms’” [J. Electrochem. Soc., 130, 1161]. Journal of The Electrochemical Society. 131(12). 3022–3023. 2 indexed citations
13.
Rayment, Trevor, Robert K. Thomas, G. Bomchil, & John W. White. (1981). The structure and properties of methane adsorbed on graphitized carbon black determined by neutron diffraction. Molecular Physics. 43(3). 601–620. 31 indexed citations
14.
Bomchil, G., Alfred Hüller, Trevor Rayment, et al.. (1980). The structure and dynamics of methane adsorbed on graphite. Philosophical transactions of the Royal Society of London. Series B, Biological sciences. 290(1043). 537–552. 41 indexed citations
15.
Meehan, Peter, Trevor Rayment, Robert K. Thomas, G. Bomchil, & John W. White. (1980). Neutron diffraction from benzene adsorbed on graphite. Journal of the Chemical Society Faraday Transactions 1 Physical Chemistry in Condensed Phases. 76(0). 2011–2011. 50 indexed citations
16.
Thomas, Robert K., et al.. (1979). Structure and dynamics of ammonia absorbed on graphitized carbon black. Part 3.—Neutron quasielastic and inelastic spectra. Journal of the Chemical Society Faraday Transactions 1 Physical Chemistry in Condensed Phases. 75(0). 1553–1553. 15 indexed citations
17.
Tabony, James, et al.. (1979). Structure and dynamics of ammonia adsorbed on graphitized carbon black. Part 4.—Nuclear magnetic resonance spectra. Journal of the Chemical Society Faraday Transactions 1 Physical Chemistry in Condensed Phases. 75(0). 1570–1570. 18 indexed citations
18.
White, John W., et al.. (1978). Neutron diffraction and inelastic scattering from adsorbed molecules. Surface Science. 76(1). 13–49. 26 indexed citations
19.
Bomchil, G., et al.. (1977). Reactive sputtering of indium targets in a D.C. triode configuration. Thin Solid Films. 47(3). 235–240. 4 indexed citations
20.
Bomchil, G., et al.. (1970). Photocurrents at the mercury-solution interface. Journal of Electroanalytical Chemistry. 25(1). 107–119. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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