C. Pomot

431 total citations
27 papers, 358 citations indexed

About

C. Pomot is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Mechanics of Materials. According to data from OpenAlex, C. Pomot has authored 27 papers receiving a total of 358 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 9 papers in Computational Mechanics and 6 papers in Mechanics of Materials. Recurrent topics in C. Pomot's work include Semiconductor materials and devices (13 papers), Plasma Diagnostics and Applications (11 papers) and Ion-surface interactions and analysis (7 papers). C. Pomot is often cited by papers focused on Semiconductor materials and devices (13 papers), Plasma Diagnostics and Applications (11 papers) and Ion-surface interactions and analysis (7 papers). C. Pomot collaborates with scholars based in France. C. Pomot's co-authors include J.M. Pelletier, Y. Arnal, Jacques Pelletier, Barbara Petit, Guy Pelletier, A. Durandet, Patrice Raynaud, L. Vallier, Jean Pelletier and Jean‐Paul Booth and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

C. Pomot

23 papers receiving 316 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. Pomot France	11	243	106	77	77	60	27	358
Shinji Suganomata Japan	10	239 1.0×	74 0.7×	45 0.6×	42 0.5×	125 2.1×	66	337
T. Kawabe Japan	11	198 0.8×	159 1.5×	69 0.9×	85 1.1×	126 2.1×	80	442
V. P. Ageev Russia	12	144 0.6×	173 1.6×	223 2.9×	171 2.2×	64 1.1×	42	463
Mutumi Tuda Japan	17	522 2.1×	81 0.8×	208 2.7×	117 1.5×	94 1.6×	30	601
T. D. Mantéi United States	14	268 1.1×	179 1.7×	176 2.3×	62 0.8×	111 1.9×	47	474
G. Otto Germany	13	206 0.8×	119 1.1×	23 0.3×	80 1.0×	265 4.4×	42	516
B. V. Robouch Italy	13	179 0.7×	181 1.7×	43 0.6×	29 0.4×	124 2.1×	54	373
G. J. H. Brussaard Netherlands	13	324 1.3×	115 1.1×	112 1.5×	31 0.4×	191 3.2×	33	464
Jacob Schmidt United States	12	183 0.8×	41 0.4×	101 1.3×	95 1.2×	99 1.6×	33	425
A. Oliva-Florio Argentina	8	240 1.0×	129 1.2×	150 1.9×	391 5.1×	108 1.8×	8	565

Countries citing papers authored by C. Pomot

Since Specialization

Citations

This map shows the geographic impact of C. Pomot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Pomot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Pomot more than expected).

Fields of papers citing papers by C. Pomot

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Pomot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Pomot. The network helps show where C. Pomot may publish in the future.

Co-authorship network of co-authors of C. Pomot

This figure shows the co-authorship network connecting the top 25 collaborators of C. Pomot. A scholar is included among the top collaborators of C. Pomot based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Pomot. C. Pomot is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Raynaud, Patrice & C. Pomot. (1993). Cleaning of silicon surfaces by argon microwave multipolar plasmas excited by distributed electron cyclotron resonance. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(3). 699–708. 7 indexed citations

Belkacem, A., et al.. (1993). Electronic defects induced in p- and n-type silicon by SF6 plasma etching. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(3). 709–716. 2 indexed citations

Raynaud, Patrice, Jean‐Paul Booth, & C. Pomot. (1991). Hydrogen plasma treatment: desorption of atomic hydrogen from silicon surfaces studied by in-situ spectroscopic ellipsometry. Physica B Condensed Matter. 170(1-4). 497–502. 4 indexed citations

Pelletier, Jean, et al.. (1990). Distributed electron cyclotron resonance in silicon processing: Epitaxy and etching. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 8(3). 2931–2938. 23 indexed citations

Raynaud, Patrice, Jean‐Paul Booth, & C. Pomot. (1990). Hydrogen plasma treatment of silicon surfaces studied by in-situ spectroscopic ellipsometry. Applied Surface Science. 46(1-4). 435–440. 4 indexed citations

Durandet, A., Y. Arnal, Jacques Pelletier, & C. Pomot. (1990). Anisotropy and kinetics of the etching of tungsten in SF6 multipolar microwave plasma. Journal of Applied Physics. 67(5). 2298–2302. 11 indexed citations

Belkacem, A., E. André, J.C. Oberlin, et al.. (1989). Electronic defects induced in silicon by SF6 plasma etching. Materials Science and Engineering B. 4(1-4). 451–455. 7 indexed citations

Pomot, C., et al.. (1989). Microwave multipolar plasma for etching and deposition. Applied Surface Science. 36(1-4). 267–277. 9 indexed citations

Pomot, C., et al.. (1986). Anisotropic etching of silicon using an SF6/Ar microwave multipolar plasma. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(1). 1–5. 30 indexed citations

10.

Arnal, Y., Jacques Pelletier, C. Pomot, Barbara Petit, & A. Durandet. (1984). Plasma etching in magnetic multipole microwave discharge. Applied Physics Letters. 45(2). 132–134. 32 indexed citations

11.

Pelletier, J.M., et al.. (1984). Application of wide-gap semiconductors to surface ionization: Work functions of AlN and SiC single crystals. Journal of Applied Physics. 55(4). 994–1002. 62 indexed citations

12.

Pelletier, J.M. & C. Pomot. (1979). Negative surface ionization hysteresis phenomena. Journal of Applied Physics. 50(3). 1512–1518. 9 indexed citations

13.

Pelletier, J.M. & C. Pomot. (1979). Work function of sintered lanthanum hexaboride. Applied Physics Letters. 34(4). 249–251. 48 indexed citations

14.

Pelletier, J.M., et al.. (1979). Negative surface ionization: Intense halogen-ion source. Journal of Applied Physics. 50(7). 4517–4523. 16 indexed citations

15.

Pelletier, Guy & C. Pomot. (1977). Analysis of the Dupree-Weinstock theory of turbulent plasma in a magnetic field. Plasma Physics. 19(4). 315–328. 1 indexed citations

16.

Pelletier, J.M., et al.. (1976). Surface ionization negative ion source. Applied Physics Letters. 28(5). 292–294. 21 indexed citations

17.

Pelletier, Guy & C. Pomot. (1975). Derivation and properties of a Balescu–Lenard like equation for stationary plasma turbulence in the weak-coupling approximation. Journal of Plasma Physics. 14(1). 153–167. 11 indexed citations

18.

Pomot, C., et al.. (1967). Étude d’une lentille pour micro-ondes a deux dimensions permettant une exploration angulaire importante dans une large bande de fréquences. Annals of Telecommunications. 22(3-4). 65–75. 1 indexed citations

19.

Pomot, C., et al.. (1966). Étude Théorique et Expérimentale d’un Réflecteur Bidimensionnel a Grand Champ Angulaire. Annals of Telecommunications. 21(3-4). 88–95. 1 indexed citations

20.

Pomot, C., et al.. (1966). Étude Théorique d’une Nouvelle Classe de Lentilles Pour Micro-Ondes a Deux Dimensions et Grand Champ Angulaire. Annals of Telecommunications. 21(1-2). 2–10. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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